Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BVDSS 60V
▼ Lower On-resistance RDS(ON) 3.2mΩ
▼ RoHS Compliant & Halogen-Free ID240A
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TC=25℃A
ID@TC=25℃A
ID@TC=100℃A
IDM A
PD@TC=25℃W
TSTG ℃
TJ℃
Symbol Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 0.4 ℃/W
Rthj-a Maixmum Thermal Resistance, Junction-ambient 40 ℃/W
Data and specifications subject to change without notice
201012281
1
AP9970GW-HF
Halogen-Free Product
-55 to 175
120
Parameter Rating
Drain-Source Voltage 60
Gate-Source Voltage +20
Continuous Drain Current (Chip) 240
Continuous Drain Current, VGS @ 10V3120
Pulsed Drain Current1480
Continuous Drain Current, VGS @ 10V3
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation 375
-55 to 175
Operating Junction Temperature Range
G
D
S
A
dvanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-3P package is widely preferred for commercial-industrial
surface mount applications and suited for higher voltage applications
such as SMPS.
GDSTO-3P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 60 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=60A - - 3.2 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V
gfs Forward Transconductance VDS=10V, ID=60A - 105 - S
IDSS Drain-Source Leakage Current VDS=60V, VGS=0V - - 10 uA
IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA
QgTotal Gate Charge2ID=40A - 125 200 nC
Qgs Gate-Source Charge VDS=48V - 12 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 74 - nC
td(on) Turn-on Delay Time2VDS=30V - 65 - ns
trRise Time ID=40A - 240 - ns
td(off) Turn-off Delay Time RG=25Ω- 250 - ns
tfFall Time VGS=10V - 350 - ns
Ciss Input Capacitance VGS=0V - 4100 6560 pF
Coss Output Capacitance VDS=25V - 1320 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 650 - pF
RgGate Resistance f=1.0MHz - 2 - Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=60A, VGS=0V - - 1.3 V
trr Reverse Recovery Time2IS=10A, VGS=0V - 75 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 175 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 120A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9970GW-HF
A
P9970GW-HF
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0
80
160
240
320
0 4 8 12 16 20 24 28
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=25oC10V
8.0V
7.0V
6.0V
VGS =5.0V
0
40
80
120
160
200
048121620
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=175oC10V
8.0V
7.0V
6.0V
VGS =5.0V
0.2
0.6
1.0
1.4
1.8
2.2
2.6
-50 0 50 100 150 200
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=60A
VG=10V
0
10
20
30
40
50
60
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oCTj=175oC
0.0
0.4
0.8
1.2
1.6
-50 0 50 100 150 200
Tj , Junction Temperature ( oC)
Normalized VGS(th) (V)
2
2.8
3.6
4.4
5.2
45678910
VGS ,Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
I
D=60A
TC=25oC
ID=1mA
AP9970GW-HF
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
0
2
4
6
8
10
12
0 40 80 120 160
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
VDS =30V
VDS =36V
V DS =48V
ID=40A
Q
VG
10V
QGS QGD
QG
Charge
0
1000
2000
3000
4000
5000
6000
1 5 9 1317212529
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
1
10
100
1000
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
ID (A)
Tc=25oC
S
in
g
le Puls
e
100us
1ms
10ms
100ms
DC
td(on) trtd(off) tf
VDS
VGS
10%
90%
Operation in this
area limited by
RDS(ON)
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
