MJD31CG - ON Semiconductor

 Semiconductor Components Industries, LLC, 2012

February, 2012 − Rev. 10

1Publication Order Number:

MJD31/D

MJD31, NJVMJD31T4G,

MJD31C, NJVMJD31CT4G

(NPN), MJD32,

NJVMJD32T4G, MJD32C,

NJVMJD32CG,

NJVMJD32CT4G (PNP)

Complementary Power

Transistors

DPAK For Surface Mount Applications

Designed for general purpose amplifier and low speed switching

applications.

Features

Lead Formed for Surface Mount Applications in Plastic Sleeves

Straight Lead Version in Plastic Sleeves (“1” Suffix)

Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)

Electrically Similar to Popular TIP31 and TIP32 Series

Epoxy Meets UL 94, V−0 @ 0.125 in

ESD Ratings:

Human Body Model, 3B > 8000 V

Machine Model, C > 400 V

NJV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

These are Pb−Free Packages*

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

SILICON

POWER TRANSISTORS

3 AMPERES

40 AND 100 VOLTS

15 WATTS

See detailed ordering and shipping information in the package

dimensions section on page 9 of this data sheet.

ORDERING INFORMATION

DPAK−3

CASE 369D

STYLE 1

DPAK

CASE 369C

STYLE 1

MARKING DIAGRAMS

A = Site Code

Y = Year

WW = Work Week

xx = 1, 1C, 2, or 2C

G = Pb−Free Package

AYWW

J3xxG

YWW

J3xxG

http://onsemi.com

DPAK DPAK−3

MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,

MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)

http://onsemi.com

2

MAXIMUM RATINGS

Rating Symbol Max Unit

Collector−Emitter Voltage

MJD31, NJVMJD31T4G, MJD32, NJVMJD32T4G

MJD31C, NJVMJD31CT4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G

VCEO 40

100

Vdc

Collector−Base Voltage

MJD31, NJVMJD31T4G, MJD32, NJVMJD32T4G

MJD31C, NJVMJD31CT4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G

VCB 40

100

Vdc

Emitter−Base Voltage VEB 5 Vdc

Collector Current

Continuous

Peak

IC

3

5

Adc

Base Current IB1 Adc

Total Power Dissipation

@ TC = 25C

Derate above 25C

PD15

0.12

W

W/C

Total Power Dissipation

@ TA = 25C

Derate above 25C

PD1.56

0.012

W

W/C

Operating and Storage Junction Temperature Range TJ, Tstg −65 to +150 C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may

affect device reliability.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case RqJC 8.3 C/W

Thermal Resistance, Junction−to−Ambient* RqJA 80 C/W

Lead Temperature for Soldering Purposes TL260 C

*These ratings are applicable when surface mounted on the minimum pad sizes recommended.

MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,

MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)

http://onsemi.com

3

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Sustaining Voltage (Note 1)

(IC = 30 mAdc, IB = 0)

MJD31, NJVMJD31T4G, MJD32, NJVMJD32T4G

MJD31C, NJVMJD31CT4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

40

100

ÎÎÎÎ

−

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 40 Vdc, IB = 0)

MJD31, NJVMJD31T4G, MJD32, NJVMJD32T4G

(VCE = 60 Vdc, IB = 0)

MJD31C, NJVMJD31CT4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G

ÎÎÎÎ

ICEO

ÎÎÎÎ

−

ÎÎÎÎ

50

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = Rated VCEO, VEB = 0)

ÎÎÎÎ

ICES

ÎÎÎÎ

−

ÎÎÎÎ

20

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VBE = 5 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

−

ÎÎÎÎ

1

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (Note 1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 1 Adc, VCE = 4 Vdc)

(IC = 3 Adc, VCE = 4 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

25

10

ÎÎÎÎ

−

50

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Saturation Voltage

(IC = 3 Adc, IB = 375 mAdc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

−

ÎÎÎÎ

1.2

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base−Emitter On Voltage

(IC = 3 Adc, VCE = 4 Vdc)

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

−

ÎÎÎÎ

1.8

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current Gain − Bandwidth Product (Note 2)

(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz)

ÎÎÎÎ

fT

ÎÎÎÎ

3

ÎÎÎÎ

−

ÎÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small−Signal Current Gain

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz)

ÎÎÎÎ

hfe

ÎÎÎÎ

20

ÎÎÎÎ

−

ÎÎÎÎ

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

2. fT = hfe ftest.

MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,

MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)

http://onsemi.com

4

25

Figure 1. Power Derating

T, TEMPERATURE (C)

050 75 100 125 150

20

15

10

5

PD, POWER DISSIPATION (WATTS)

Figure 2. Switching Time Test Circuit

3

0.03

IC, COLLECTOR CURRENT (AMPS)

0.03 0.05 0.07 0.1 0.2 0.5 0.7

IB1 = IB2

IC/IB = 10

ts = ts - 1/8 tf

TJ = 25C

t, TIME (s)

0.3

2

1

0.7

0.5

0.3

ts

0.2

0.1

0.07

0.05

12

Figure 3. Turn−On Time

2

IC, COLLECTOR CURRENT (AMPS)

0.02

IC/IB = 10

TJ = 25C

t, TIME (s)

1

0.7

0.5

0.3

0.1

0.07

0.05

0.03

+11 V

25 ms

0

-9 V

RB

-4 V

D1

SCOPE

VCC

+30 V

RC

tr, tf  10 ns

DUTY CYCLE = 1%

51

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE IB  100 mA

MSD6100 USED BELOW IB  100 mA

REVERSE ALL POLARITIES FOR PNP.

0.03 0.07 0.3 30.1 0.7

0.05 0.5 1

tr @ VCC = 30 V

tr @ VCC = 10 V

td @ VBE(off) = 2 V

tf @ VCC = 30 V

tf @ VCC = 10 V

2.5

0

2

1.5

1

0.5

TATC

Figure 4. Turn−Off Time

TA (SURFACE MOUNT)

TC

TYPICAL CHARACTERISTICS

t, TIME (ms)

1

0.01 1 k

0.3

0.2

0.07

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

RqJC(t) = r(t) RqJC

RqJC = 8.33C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) qJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

SINGLE PULSE

0.01

0.7 D = 0.5

Figure 5. Thermal Response

0.5

0.1

0.05

0.03

0.02

0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500

0.2

0.1

0.05

0.01

MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,

MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)

http://onsemi.com

5

TYPICAL CHARACTERISTICS − MJD31, MJD31C (NPN)

1

10

100

1000

0.01 0.1 1 10

IC, COLLECTOR CURRENT (A)

Figure 6. DC Current Gain at VCE = 4 V

hFE, DC CURRENT GAIN

VCE = 4 V

25C

150C

−55C

1

10

100

1000

0.01 0.1 1 10

IC, COLLECTOR CURRENT (A)

Figure 7. DC Current Gain at VCE = 2 V

hFE, DC CURRENT GAIN

VCE = 2 V

25C

150C

−55C

0

0.1

0.2

0.3

0.4

0.5

0.6

0.001 0.01 0.1 1 10

IC, COLLECTOR CURRENT (A)

Figure 8. Collector−Emitter Saturation Voltage

VCE(sat), COLL−EMITT SATURATION

VOLTAGE (V)

IC/IB = 10

25C

150C

−55C

VBE(sat), BASE−EMITT SATURATION VOLTAGE (V)

IC, COLLECTOR CURRENT (A)

Figure 9. Base−Emitter Saturation Voltage

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

0.001 0.01 0.1 1 10

VCE = 5 V

VBE(on), BASE−EMITTER ON VOLTAGE (V)

IC, COLLECTOR CURRENT (A)

Figure 10. Base-Emitter “On” Voltage

−55C

25C

150C

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

0.001 0.01 0.1 1 10

IC/IB = 10

−55C

25C

150C

0

0.4

0.8

1.2

1.6

2

0.01 0.1 1 10 100 1000

IB, BASE CURRENT (mA)

Figure 11. Collector Saturation Region

VCE, COLLECTOR−EMITTER VOLTAGE (V)

10 mA

100 mA 500 mA

1 A

IC = 3 A

TA =

25C

MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,

MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)

http://onsemi.com

6

TYPICAL CHARACTERISTICS − MJD31, MJD31C (NPN)

1

10

100

1000

0.1 1 10 100

VR, REVERSE VOLTAGE (V)

Figure 12. Capacitance

C, CAPACITANCE (pF)

Cib

Cob

TA = 25C

1

10

100

0.001 0.01 0.1 1 10

VCE = 5 V

TA = 25C

IC, COLLECTOR CURRENT (A)

Figure 13. Current−Gain−Bandwidth Product

fT

, CURRENT−GAIN − BANDWIDTH

PRODUCT (MHz)

0.01

0.1

1

10

1 10 100

VCE, COLLECTOR−EMITTER VOLTAGE (V)

Figure 14. Safe Operating Area

IC, COLLECTOR CURRENT (A)

MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,

MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)

http://onsemi.com

7

TYPICAL CHARACTERISTICS − MJD32, MJD32C (PNP)

1

10

100

1000

0.01 0.1 1 10

IC, COLLECTOR CURRENT (A)

Figure 15. DC Current Gain at VCE = 4 V

hFE, DC CURRENT GAIN

VCE = 4 V

25C

150C

−55C

1

10

100

1000

0.01 0.1 1 10

IC, COLLECTOR CURRENT (A)

Figure 16. DC Current Gain at VCE = 2 V

hFE, DC CURRENT GAIN

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

0.001 0.01 0.1 1 10

VCE = 2 V

25C

150C

−55C

25C

150C

−55C

IC, COLLECTOR CURRENT (A)

Figure 17. Collector−Emitter Saturation

Voltage

VCE(sat), COLL−EMITT SATURATION

VOLTAGE (V)

IC/IB = 10

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0.001 0.01 0.1 1 10

25C

150C

−55C

IC, COLLECTOR CURRENT (A)

Figure 18. Base−Emitter Saturation Voltage

VBE(sat), BASE−EMITTER

SATURATION VOLTAGE (V)

IC/IB = 10

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

0.001 0.01 0.1 1 10

VCE = 5 V

25C

150C

−55C

IC, COLLECTOR CURRENT (A)

Figure 19. Base−Emitter “On” Voltage

VBE(on), BASE−EMITTER ON

VOLTAGE (V)

0

0.4

0.8

1.2

1.6

2

0.01 0.1 1 10 100 1000

IB, BASE CURRENT (mA)

Figure 20. Collector Saturation Region

VCE, COLLECTOR−EMITTER VOLTAGE (V)

10 mA

100 mA

500 mA

1 A

IC = 3 A

TA =

25C

MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,

MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)

http://onsemi.com

8

TYPICAL CHARACTERISTICS

1

10

100

1000

0.1 1 10 100

VR, REVERSE VOLTAGE (V)

Figure 21. Capacitance

C, CAPACITANCE (pF)

Cib

Cob

TA = 25C

1

10

100

0.001 0.01 0.1 1 10

IC, COLLECTOR CURRENT (A)

Figure 22. Current−Gain−Bandwidth Product

fT

, CURRENT−GAIN − BANDWIDTH

PRODUCT (MHz)

VCE = 5 V

TA = 25C

0.01

0.1

1

10

1 10 100

VCE, COLLECTOR−EMITTER VOLTAGE (V)

Figure 23. Safe Operating Area

IC, COLLECTOR CURRENT (A)

1 ms

1 s

MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,

MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)

http://onsemi.com

9

ORDERING INFORMATION

Device Package Type Package Shipping†

MJD31CG DPAK

(Pb−Free)

369C 75 Units / Rail

MJD31C1G DPAK−3

(Pb−Free)

369D 75 Units / Rail

MJD31CRLG DPAK

(Pb−Free)

369C 1,800 Tape & Reel

MJD31CT4G DPAK

(Pb−Free)

369C 2,500 Tape & Reel

NJVMJD31CT4G DPAK

(Pb−Free)

369C 2,500 Tape & Reel

MJD31T4G DPAK

(Pb−Free)

369C 2,500 Tape & Reel

NJVMJD31T4G DPAK

(Pb−Free)

369C 2,500 Tape & Reel

MJD32CG DPAK

(Pb−Free)

369C 75 Units / Rail

NJVMJD32CG DPAK

(Pb−Free)

369C 75 Units / Rail

MJD32CRLG DPAK

(Pb−Free)

369C 1,800 Tape & Reel

MJD32CT4 DPAK 369C 2,500 Tape & Reel

MJD32CT4G DPAK

(Pb−Free)

369C 2,500 Tape & Reel

NJVMJD32CT4G DPAK

(Pb−Free)

369C 2,500 Tape & Reel

MJD32RLG DPAK

(Pb−Free)

369C 1,800 Tape & Reel

MJD32T4G DPAK

(Pb−Free)

369C 2,500 Tape & Reel

NJVMJD32T4G DPAK

(Pb−Free)

369C 2,500 Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,

MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)

http://onsemi.com

10

PACKAGE DIMENSIONS

DPAK

CASE 369C−01

ISSUE D

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

5.80

0.228

2.58

0.101

1.6

0.063

6.20

0.244

3.0

0.118

6.172

0.243

ǒmm

inchesǓ

SCALE 3:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

b

D

E

b3

L3

L4

b2

eM

0.005 (0.13) C

c2

A

c

C

Z

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

D0.235 0.245 5.97 6.22

E0.250 0.265 6.35 6.73

A0.086 0.094 2.18 2.38

b0.025 0.035 0.63 0.89

c2 0.018 0.024 0.46 0.61

b2 0.030 0.045 0.76 1.14

c0.018 0.024 0.46 0.61

e0.090 BSC 2.29 BSC

b3 0.180 0.215 4.57 5.46

L4 −−− 0.040 −−− 1.01

L0.055 0.070 1.40 1.78

L3 0.035 0.050 0.89 1.27

Z0.155 −−− 3.93 −−−

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME

Y14.5M, 1994.

2. CONTROLLING DIMENSION: INCHES.

3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-

MENSIONS b3, L3 and Z.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD

FLASH, PROTRUSIONS, OR BURRS. MOLD

FLASH, PROTRUSIONS, OR GATE BURRS SHALL

NOT EXCEED 0.006 INCHES PER SIDE.

5. DIMENSIONS D AND E ARE DETERMINED AT THE

OUTERMOST EXTREMES OF THE PLASTIC BODY.

6. DATUMS A AND B ARE DETERMINED AT DATUM

PLANE H.

12 3

4

H0.370 0.410 9.40 10.41

A1 0.000 0.005 0.00 0.13

L1 0.108 REF 2.74 REF

L2 0.020 BSC 0.51 BSC

A1

H

DETAIL A

SEATING

PLANE

A

B

C

L1

L

H

L2 GAUGE

PLANE

DETAIL A

ROTATED 90 CW5

MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,

MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)

http://onsemi.com

11

PACKAGE DIMENSIONS

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

123

4

V

SA

K

−T−

SEATING

PLANE

R

B

F

G

D3 PL

M

0.13 (0.005) T

C

E

J

H

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.235 0.245 5.97 6.35

B0.250 0.265 6.35 6.73

C0.086 0.094 2.19 2.38

D0.027 0.035 0.69 0.88

E0.018 0.023 0.46 0.58

F0.037 0.045 0.94 1.14

G0.090 BSC 2.29 BSC

H0.034 0.040 0.87 1.01

J0.018 0.023 0.46 0.58

K0.350 0.380 8.89 9.65

R0.180 0.215 4.45 5.45

S0.025 0.040 0.63 1.01

V0.035 0.050 0.89 1.27

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

Z

Z0.155 −−− 3.93 −−−

IPAK

CASE 369D−01

ISSUE C

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

MJD31/D

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