V
RRM
= 600 V - 1200 V
I
F
= 320 A
Features
• High Surge Capability DO-9 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter Symbol S320J (R) S320K (R) Unit
Re
etitive
eak reverse volta
eV
RRM
600 800 V
• Types from 600 V to 1200 V V
RRM
Conditions
1200
S320J thru S320QR
S320Q (R)
1000
S320M (R)
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Silicon Standard
Recover
Diode
2. Reverse polarity (R): Stud is anode.
RMS reverse voltage V
RMS
420 566 V
DC blocking voltage V
DC
600 800 V
Continuous forward current I
F
320 320 A
Operating temperature T
j
-55 to 150 -55 to 150 °C
Storage temperature T
stg
-55 to 150 -55 to 150 °C
Parameter Symbol S320J (R) S320K (R) Unit
Diode forward voltage 1.2 1.2
10 10 μA
12 12 mA
Thermal characteristics
Thermal resistance, junction -
case R
thJC
0.16 0.16 °C/W
V
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
S320M (R)
Surge non-repetitive forward
current, Half Sine Wave I
F,SM
-55 to 150
‐55to150
T
C
= 25 °C, t
p
= 8.3 ms
848
12001000
0.16
V
R
= 600 V, T
j
= 175 °C
0.16
1.2 1.2
12
V
R
= 600 V, T
j
= 25 °C
I
F
= 300 A, T
j
= 25 °C
T
C
≤ 100 °C
Conditions
707
4700 4700
-55 to 150
320 320
12
A4700
Reverse current I
R
V
F
4700
‐55to150
S320Q (R)
10 10
Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
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