DDATA SHEET
Product specification August 1997
DISCRETE SEMICONDUCTORS
BT134 series
Triacs
NXP Semiconductors Product specification
Triacs BT134 series
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated triacs in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT
envelope, intended for use in
applications requiring high BT134- 500 600 800
bidirectional transient and blocking BT134- 500F 600F 800F
voltage capability and high thermal BT134- 500G 600G 800G
cycling performance. Typical VDRM Repetitive peak off-state 500 600 800 V
applications include motor control, voltages
industrial and domestic lighting, IT(RMS) RMS on-state current 4 4 4 A
heating and static switching. ITSM Non-repetitive peak on-state 25 25 25 A
current
PINNING - SOT82 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 main terminal 1
2 main terminal 2
3 gate
tab main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500 -600 -800
VDRM Repetitive peak off-state - 50016001800 V
voltages
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 107 ˚C - 4 A
ITSM Non-repetitive peak full sine wave; Tj = 25 ˚C prior to
on-state current surge
t = 20 ms - 25 A
t = 16.7 ms - 27 A
I2tI
2t for fusing t = 10 ms - 3.1 A2s
dIT/dt Repetitive rate of rise of ITM = 6 A; IG = 0.2 A;
on-state current after dIG/dt = 0.2 A/μs
triggering T2+ G+ - 50 A/μs
T2+ G- - 50 A/μs
T2- G- - 50 A/μs
T2- G+ - 10 A/μs
IGM Peak gate current - 2 A
VGM Peak gate voltage - 5 V
PGM Peak gate power - 5 W
PG(AV) Average gate power over any 20 ms period - 0.5 W
Tstg Storage temperature -40 150 ˚C
TjOperating junction - 125 ˚C
temperature
T1T2
G
123
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/μs.
August 1997 1 Rev 1.200
NXP Semiconductors Product specification
Triacs BT134 series
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-mb Thermal resistance full cycle - - 3.0 K/W
junction to mounting base half cycle - - 3.7 K/W
Rth j-a Thermal resistance in free air - 100 - K/W
junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BT134- ... ...F ...G
IGT Gate trigger current VD = 12 V; IT = 0.1 A
T2+ G+ - 5 35 25 50 mA
T2+ G- - 8 35 25 50 mA
T2- G- - 11 35 25 50 mA
T2- G+ - 30 70 70 100 mA
ILLatching current VD = 12 V; IGT = 0.1 A
T2+ G+ - 7 20 20 30 mA
T2+ G- - 16 30 30 45 mA
T2- G- - 5 20 20 30 mA
T2- G+ - 7 30 30 45 mA
IHHolding current VD = 12 V; IGT = 0.1 A - 5 15 15 30 mA
VTOn-state voltage IT = 5 A - 1.4 1.70 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; 0.25 0.4 - V
Tj = 125 ˚C
IDOff-state leakage current VD = VDRM(max); - 0.1 0.5 mA
Tj = 125 ˚C
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BT134- ... ...F ...G
dVD/dt Critical rate of rise of VDM =67% VDRM(max); 100 50 200 250 - V/μs
off-state voltage Tj = 125 ˚C; exponential
waveform; gate open
circuit
dVcom/dt Critical rate of change of VDM = 400 V; Tj = 95 ˚C; - - 10 50 - V/μs
commutating voltage IT(RMS) = 4 A;
dIcom/dt = 1.8 A/ms; gate
open circuit
tgt Gate controlled turn-on ITM = 6 A; VD = VDRM(max);- - - 2 - μs
time IG = 0.1 A;
dIG/dt = 5 A/μs;
August 1997 2 Rev 1.200
NXP Semiconductors Product specification
Triacs BT134 series
Fig.1. Maximum on-state dissipation, P
tot
, versus rms
on-state current, I
T(RMS)
, where
α
= conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
≤
20ms.
Fig.3. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
mb
≤
107˚C.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25˚C), versus junction temperature T
j
.
012345
0
1
2
3
4
5
6
7
8
= 180
120
90
60
30
BT136
IT(RMS) / A
Ptot / W Tmb(max) / C
125
122
119
116
113
110
107
104
101
1
-50 0 50 100 150
0
1
2
3
4
5BT136
Tmb / C
IT(RMS) / A
107 C
10us 100us 1ms 10ms 100ms
10
100
1000 BT136
T / s
ITSM / A
TITSM
time
I
Tj initial = 25 C max
T
dI /dt limit
T
T2- G+ quadrant
0.01 0.1 1 10
0
2
4
6
8
10
12 BT136
surge duration / s
IT(RMS) / A
1 10 100 1000
0
5
10
15
20
25
30 BT136
Number of cycles at 50Hz
ITSM / A
TITSM
time
I
Tj initial = 25 C max
T
-50 0 50 100 150
0.4
0.6
0.8
1
1.2
1.4
1.6 BT136
Tj / C
VGT(Tj)
VGT(25 C)
August 1997 3 Rev 1.200
NXP Semiconductors Product specification
Triacs BT134 series
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25˚C), versus junction temperature T
j
.
Fig.8. Normalised latching current I
L
(T
j
)/ I
L
(25˚C),
versus junction temperature T
j
.
Fig.9. Normalised holding current I
H
(T
j
)/ I
H
(25˚C),
versus junction temperature T
j
.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
th j-mb
, versus
pulse width t
p
.
Fig.12. Typical commutation dV/dt versus junction
temperature, parameter commutation dI
T
/dt. The triac
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dI
T
/dt.
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3BT136
Tj / C
T2+ G+
T2+ G-
T2- G-
T2- G+
IGT(Tj)
IGT(25 C)
0 0.5 1 1.5 2 2.5 3
0
2
4
6
8
10
12 BT136
VT / V
IT / A
Tj = 125 C
Tj = 25 C typ max
Vo = 1.27 V
Rs = 0.091 ohms
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3TRIAC
Tj / C
IL(Tj)
IL(25 C)
10us 0.1ms 1ms 10ms 0.1s 1s 10s
0.01
0.1
1
10 BT136
tp / s
Zth j-mb (K/W)
unidirectional
bidirectional
tp
P
t
D
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3TRIAC
Tj / C
IH(Tj)
IH(25C)
0 50 100 150
1
10
100
1000
1.83
Tj / C
dIcom/dt = 5.1 3.9 2.3
dVcom/dt (V/us)
A/ms
1.4
off-state dV/dt limit
BT134...G SERIES
BT134 SERIES
BT134...F SERIES
August 1997 4 Rev 1.200
NXP Semiconductors Product specification
Triacs BT134 series
MECHANICAL DATA
Dimensions in mm
Net Mass: 0.8 g
Fig.13. SOT82; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT82 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
4.58
2.54
max
1)
1.2
2.8
2.3
3.1
2.5
123
0.88
max
2.29
15.3
min
11.1
max
3.75
7.8
max
1) Lead dimensions within this
zone uncontrolled.
0.5
mounting
base
August 1997 5 Rev 1.200
NXP Semiconductors
Legal information
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DOCUMENT
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STATUS(2) DEFINITION
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