PN2222A / MMBT2222A / PZT2222A — NPN General Purpose Amplifier
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
PN2222A / MMBT2222A / PZT222 2A Rev. A3 1
August 2010
PN2222A / MMBT2222A / PZT2222A
NPN General Purpose Amplifier
Features
• This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA.
• Sourced from process 19.
Absolute Maximum Ratings * Ta = 25°C unless otherwise noted
* This ratings are limiting values above which the servicea bility of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pul sed or low duty cycle
operations.
Thermal Characteristics Ta = 25°C unless otherwise noted
* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06”.
** Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm2.
Symbol Parameter Value Units
VCEO Collector-Emitter V oltage 40 V
VCBO Collector-Base V oltage 75 V
VEBO Emitter-Base Voltage 6.0 V
ICCollector Current 1.0 A
TSTG Operating and S torage Junction Temperature Range - 55 ~ 150 °C
Symbol Parameter Max. Units
PN2222A *MMBT2222A **PZT2222A
PDTotal Device Dissipation
Derate above 25°C625
5.0 350
2.8 1,000
8.0 mW
mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 357 125 °C/W
PN2222A MMBT2222A PZT2222A
EBC TO-92 SOT-23 SOT-223
Mark:1P
C
B
EE
BC
C
PN2222A / MMBT2222A / PZT2222A — NPN General Purpose Amplifier
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
PN2222A / MMBT2222A / PZT222 2A Rev. A3 2
Electrical Characteristics Ta = 25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
BV(BR)CEO Collector-Emitter Breakdown Voltage * IC = 10mA, IB = 0 40 V
BV(BR)CBO Collector-Base Breakdown Voltage IC = 10μA, IE = 0 75 V
BV(BR)EBO Emitter-Base Breakdown Voltage IE = 10μA, IC = 0 6.0 V
ICEX Collector Cutoff Current VCE = 60V, VEB(off) = 3.0V 10 nA
ICBO Collector Cutoff Current VCB = 60V, IE = 0
VCB = 60V, IE = 0, Ta = 125 °C0.01
10 μA
μA
IEBO Emitter Cutoff Current VEB = 3.0V, IC = 0 10 nA
IBL Base Cutoff Current VCE = 60V, VEB(off) = 3.0V 20 nA
On Characteristics
hFE DC Current Gain IC = 0.1mA, VCE = 10V
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 10mA, VCE = 10V, Ta = -55°C
IC = 150mA, VCE = 10V *
IC = 150mA, VCE = 1V *
IC = 500mA, VCE = 10V *
35
50
75
35
100
50
40
300
VCE(sat) Collector-Emitter Saturation Voltage * IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA 0.3
1.0 V
V
VBE(sat) Base-Emitter Saturation Voltage * IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA 0.6 1.2
2.0 V
V
Small Signal Characteristics
fTCurrent Gain Bandwidth Product IC = 20mA, VCE = 20V, f = 100MHz 300 MHz
Cobo Output Capacitance VCB = 10V, IE = 0, f = 1MHz 8.0 pF
Cibo Input Capacitance VEB = 0.5V, IC = 0, f = 1MHz 25 pF
rb’CcCollector Base Time Constant IC = 20mA, VCB = 20V, f = 31.8MH z 150 pS
NF Noise Figure IC = 100μA, VCE = 10V,
RS = 1.0KΩ, f = 1.0KHz 4.0 dB
Re(hie) Real Part of Common-Emitter
High Frequency Input Impedance IC = 20mA, VCE = 20V, f = 300MHz 60 Ω
Switching Characteristics
tdDelay Time VCC = 30V, VEB(off) = 0.5V,
IC = 150mA, IB1 = 15mA 10 ns
trRise Time 25 ns
tsStorage T ime VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA 225 ns
tfFall Time 60 ns
PN2222A / MMBT2222A / PZT2222A — NPN General Purpose Amplifier
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
PN2222A / MMBT2222A / PZT222 2A Rev. A3 3
Typical Performance Characteristics
Figure 1. Typical Pulsed Current Gain
vs Collector Current Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current Figure 4. Base-Emitter On Voltage
vs Collector Current
Figure 5. Collector Cutoff Current
vs Ambient Temperature Figure 6. Emitter Transition and Output Capacitance
vs Reverse Bias Voltage
Typical Pulsed Current Gain
vs Coll ector Curr e nt
0.1 0.3 1 3 10 30 100 300
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h - TYPICAL PULSED CUR RENT GAIN
C
FE
125 °C
25 °C
- 40 °C
V = 5V
CE
Collector-Emitter Saturation
Voltage vs Collector Current
1 10 100 500
0.1
0.2
0.3
0.4
I - COLLECTOR CURRENT (mA)
V - COLLECTOR-EMITTER VOLTAGE (V)
CESAT
25 캜
C
β= 10
125 캜
- 40 캜
°C
°C
°C
B a se -E mitter S atu ra tion
Volta g e v s C o lle c to r C u rr e n t
1 10 100 500
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER VOLTAGE (V)
BESAT
C
β= 10
25 캜
125 캜
- 40 캜
°C
°C
°C
IC
Base-Emitter ON Voltag e v s
Collector Current
0.1 1 10 25
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER ON VOL TAGE (V)
BE(ON)
C
V = 5V
CE
25 °C
125 °C
- 40 ° C
IC
Collector-Cutoff Current
vs Ambient Temperature
25 50 75 100 125 150
0.1
1
10
100
500
T - AMBIENT TEMPERATURE ( C)
I - COLLECTOR CURRENT (nA)
A
V = 40V
CB
CBO
°
Emitter Transition and Output
Capacitance vs Reverse Bias Voltage
0.1 1 10 100
4
8
12
16
20
REVER SE BIAS V OLTAG E ( V )
CAP ACIT ANCE (pF)
f = 1 M Hz
Cob
Cte
PN2222A / MMBT2222A / PZT2222A — NPN General Purpose Amplifier
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
PN2222A / MMBT2222A / PZT222 2A Rev. A3 4
Typical Performance Characteristics (Continued)
Figure 7. Turn On and Turn Off Times
vs Collector Current Figure 8. Switching Times vs Collector Current
Figure 9. Power Dissipation vs
Ambient Temperature Figure 10. Common Emitter Characteristics
Figure 11. Common Emitter Characteristics Figure 12. Common Emitter Characteristics
Turn On and T u rn Off Ti mes
vs Collecto r C urrent
10 100 1000
0
80
160
240
320
400
I - COLLEC TOR CURREN T (mA)
TIME (nS)
I = I =
ton
t
off
B1
C
B2 Ic
10
V = 25 V
cc
IC
S wi t ching Times
vs Col lecto r C urre nt
10 100 1000
0
80
160
240
320
400
I - COLLECTOR CURRENT (mA)
TIME ( nS)
I = I =
tr
t
s
B1
C
B2
I
c
10
V = 25 V
cc
tf
td
IC
Po wer Diss ip atio n vs
A mbient Temperature
0 25 50 75 100 125 150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P - POWER DISSIPATION (W)
D
o
SOT-223
TO-92
SOT-23
Common Emitter Characteristics
0 102030405060
0
2
4
6
8
I - COLLECTOR CURRENT (mA)
CHAR. RELATIVE TO VALUES AT I = 10mA
V = 10 V
CE
C
C
T = 25 C
A o
hoe
hre
hfe
h ie
Common Emitter Characteristics
0 20406080100
0
0.4
0.8
1.2
1.6
2
2.4
T - AMBIENT TEMPERATURE ( C)
CHAR. RELATIVE TO VALUES AT T = 25 C
V = 10 V
CE
A
A
I = 10 mA
C
h oe
hre
hfe
hie
o
o
Common Emitter Characteristics
0 5 10 15 20 25 30 35
0.75
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
1.25
1.3
V - COLLECTOR VOLTAGE (V)
CHAR. RELATIVE TO VALUES AT V = 10V
CE
CE
T = 25 C
A o
hoe
hre
hfe
h ie
I = 10 mA
C
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