Freescale Introduces MMRF5014H 125 W CW, 50 V GaN on SiC RF Power Transistor November 2014 TM Freescale RF Military Overview * * * Freescale RF is #1 in RF power for cellular infrastructure* Strong presence in ISM, mobile radio, broadcast and avionics June 2013: Freescale RF announced new focus supporting U.S. defense industry Freescale RF Military Value Proposition * Products and Technology - Leveraging 20 years of innovation in RF power - Highest performing RF portfolio * Support - U.S. LDMOS fabrication and dedicated internal manufacturing - Freescale product longevity program (10 or 15 years) - Dedicated U.S.-based applications & systems engineering support * Compliance - ITAR compliant, secure technical data handling *Source: ABI 2013 Report TM 1 MMRF5014H -- Device Details Product Overview Product Performance * Output Power: 125 W * Supply Voltage: 50 V * Frequency of Operation: up to 2690 * Gain : 16 dB min * Drain Efficiency: 58% min * Wideband GaN on SiC RF Power Transistor Description This 125 W RF power transistor is designed for wideband operation up to 2690 MHz. The high gain, rugged and wideband performance of this device make it ideal for large-signal, common-source amplifier applications for linear and compressed amplifier circuits. Features * Advanced GaN on SiC, offering high power density * Suitable for octave and decade bandwidth wideband amplifiers * Input matching for extended wideband performance * High ruggedness, 20:1 VSWR * Low thermal resistance * 200-2500 MHz wideband reference circuit TM 2 MMRF5014H -- Featured Device Applications * * * * * Wideband or narrowband amplifiers Ideal for multi octave communication applications Professional and military radios Radar, jammers and electronic warfare General purpose wideband amplifiers Competitive Advantages * * * * * * * * Industry leading wideband 200-2500 MHz performance - 12 dB min gain and 40% min efficiency Low thermal resistance due to die attached technology and packaging 125 watts CW capable Device will be on Freescale's 15 year Product Longevity Program Able to replace multiple RF amplifiers with one wideband PA Application circuit support Dedicated RF Military team Availability: Sampling now. In production Q4 2014. (Orderable Part#: MMRF5014HR5) TM 3 MMRF5014H 125 W GaN Power Drive Up 125W TM 4 4 MMRF5014H Design Goals Met 100 W CW 200-2500 MHz 12 dB min gain 40% min eff 0.8 C/W 200-2500 MHz Circuit MMRF5014H 100W GaN CW Performance 100 W Gain 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 100 W Eff 80 70 60 50 40 30 20 10 0 100 300 500 700 900 1100 1300 1500 1700 Frequency (MHz) TM 5 1900 2100 2300 2500 2700 Efficiency (%) Gain (dB) VDD = 50 V, IDQ=350 mA MMRF5014H -- 500-1000 MHz Circuit 500 MHz Gain 675 MHz Gain 850 MHz Gain 1000 MHz Gain 500 MHz Eff Eff 500MHz 675 MHz Eff Eff 675MHz 850 MHzEff Eff 850MHz 1000 MHzEff Eff 1000MHz 18 70 17 60 16 50 15 40 14 30 13 20 VDD = 50 V IDQ = 350 mA 12 10 11 0 0 10 20 30 40 50 60 70 80 90 100 Output Power (W) TM 6 110 120 130 140 150 160 Efficiency (%) Gain (dB) CW Performance MMRF5014H -- 1300-1900 MHz Circuit Pulsed Performance 1600 MHz Gain 1600 MHzEff Eff 1600MHz 1900 MHz Gain 1900 MHz Eff 1900MHz 18 68 17 60 16 52 15 44 14 36 13 28 VDD = 50 V IDQ = 350 mA, Pulse Width = 500 sec 50% Duty Factor 12 11 20 12 10 4 0 20 40 60 80 100 Output Power (W) TM 7 120 140 160 180 Eff (%) Gain (dB) 1300 MHz Gain 1300MHz 1300 MHz Eff Eff TM www.Freescale.com (c) 2014 Freescale Semiconductor, Inc.