TM 1
Freescale RF Military Overview
•Freescale RF is #1 in RF power for cellular infrastructure*
•Strong presence in ISM, mobile radio, broadcast and
avionics
•June 2013: Freescale RF announced new focus supporting
U.S. defense industry
Freescale RF Military Value Proposition
•Products and Technology
−Leveraging 20 years of innovation in RF power
−Highest performing RF portfolio
•Support
−U.S. LDMOS fabrication and dedicated internal manufacturing
−Freescale product longevity program (10 or 15 years)
−Dedicated U.S.-based applications & systems engineering
support
•Compliance
−ITAR compliant, secure technical data handling
*Source: ABI 2013 Report
TM 2
MMRF5014H — Device Details
Product Overview
Product Performance
•Output Power: 125 W
•Supply Voltage: 50 V
•Frequency of Operation: up to 2690
•Gain : 16 dB min
•Drain Efficiency: 58% min
•Wideband GaN on SiC RF Power Transistor
Description
This 125 W RF power transistor is designed for wideband operation up to 2690
MHz. The high gain, rugged and wideband performance of this device make it ideal
for large-signal, common-source amplifier applications for linear and compressed
amplifier circuits.
Features
•Advanced GaN on SiC, offering high power density
•Suitable for octave and decade bandwidth wideband amplifiers
•Input matching for extended wideband performance
•High ruggedness, 20:1 VSWR
•Low thermal resistance
•200-2500 MHz wideband reference circuit
TM 3
Applications
•Wideband or narrowband amplifiers
•Ideal for multi octave communication applications
•Professional and military radios
•Radar, jammers and electronic warfare
•General purpose wideband amplifiers
Competitive Advantages
•Industry leading wideband 200-2500 MHz performance
−12 dB min gain and 40% min efficiency
•Low thermal resistance due to die attached technology and packaging
•125 watts CW capable
•Device will be on Freescale’s 15 year Product Longevity Program
•Able to replace multiple RF amplifiers with one wideband PA
•Application circuit support
•Dedicated RF Military team
•Availability: Sampling now. In production Q4 2014. (Orderable Part#: MMRF5014HR5)
MMRF5014H — Featured Device
TM 5
MMRF5014H
200-2500 MHz Circuit
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Efficiency (%)
Gain (dB)
Frequency (MHz)
MMRF5014H 100W GaN CW Performance
VDD = 50 V, IDQ=350 mA
100 W Gain
100 W Eff
Design Goals Met
►100 W CW
►200-2500 MHz
►12 dB min gain
►40% min eff
►0.8⁰ C/W
TM 6
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Efficiency (%)
Gain (dB)
Output Power (W)
500 MHz Gain
675 MHz Gain
850 MHz Gain
1000 MHz Gain
500MHz Eff
675MHz Eff
850MHz Eff
1000MHz Eff
VDD = 50 V
IDQ = 350 mA
500 MHz Eff 675 MHz Eff 850 MHz Eff 1000 MHz Eff
MMRF5014H — 500-1000 MHz Circuit
CW Performance
TM 7
MMRF5014H — 1300-1900 MHz Circuit
Pulsed Performance
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28
36
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52
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68
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Eff (%)
Gain (dB)
Output Power (W)
1300 MHz Gain
1600 MHz Gain
1900 MHz Gain
1300MHz Eff
1600MHz Eff
1900MHz
VDD = 50 V
IDQ = 350 mA,
Pulse Width = 500 μsec
50% Duty Factor
1900 MHz Eff
1600 MHz Eff
1300 MHz Eff
