WS512K8-XCX HI-RELIABILITY PRODUCT 512Kx8 SRAM MODULE, SMD 5962-92078 FEATURES FIG. 1 Access Times 20, 25, 35, 45ns PIN CONFIGURATION TOP VIEW A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 Standard Microcircuit Drawing, 5962-92078 MIL-STD-883 Compliant Devices Available Rad Tolerant Devices Available VCC A15 A17 WE A13 A8 A9 A11 OE A10 CS I/O7 I/O6 I/O5 I/O4 I/O3 JEDEC Standard 32 pin, Hermetic Ceramic DIP (Package 300) Commercial, Industrial andMilitary Temperature Range (-55C to +125C) Organized as 512K x 8 5 Volt Power Supply Low Power CMOS TTL Compatible Inputs and Outputs Battery Back-Up Operation PIN DESCRIPTION A0-18 Address Inputs I/O0-7 Data Input/Output CS Chip Select OE Output Enable WE Write Enable VCC +5.0V Power GND Ground BLOCK DIAGRAM A0-16 I/O0-7 WE OE 128K x 8 128K x 8 128K x 8 128K x 8 A17 A18 Decoder CS May 1999 Rev. 2 1 White Electronic Designs Corporation * Phoenix, AZ * (602) 437-1520 WS512K8-XCX ABSOLUTE MAXIMUM RATINGS Parameter TRUTH TABLE Symbol Min Max Unit CS OE WE Mode Data I/O Power TA -55 +125 C C H L L L X L X H X H L H Standby Read Write Out Disable High Z Data Out Data In High Z Standby Active Active Active Operating Temperature Storage Temperature TSTG -65 +150 Signal Voltage Relative to GND VG -0.5 Vcc+0.5 V Junction Temperature TJ 150 C 7.0 V Supply Voltage -0.5 VCC CAPACITANCE (TA = +25C) RECOMMENDED OPERATING CONDITIONS Parameter Symbol Min Max Unit Symbol Condition Max Unit Supply Voltage VCC 4.5 5.5 V Input capacitance CIN VIN = 0V, f = 1.0MHz 45 pF Input High Voltage VIH 2.2 V CC + 0.3 V Output capicitance COUT VOUT = 0V, f = 1.0MHz 45 pF Input Low Voltage VIL -0.5 +0.8 V Operating Temp. (Mil.) TA -55 +125 C Parameter This parameter is guaranteed by design but not tested. DC CHARACTERISTICS (VCC = 5.0V, GND = 0V, TA = -55C to +125C) Parameter Symbol Conditions Input Leakage Current ILI VCC = 5.5, VIN = GND to VCC Output Leakage Current ILO CS = VIH, OE = VIH, VOUT = GND to VCC Operating Supply Current ICC CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5 Standby Current ISB CS = VIH, OE = VIH, f = 5MHz Output Low Voltage VOL IOL = 8mA, Vcc = 4.5 Output High Voltage VOH IOH = -4.0mA, Vcc = 4.5 NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V -20 Min Max 10 10 210 80 0.4 2.4 -25 Min Max 10 10 210 60 0.4 2.4 -35 -45 Min Max Min Max 10 10 10 10 210 210 60 55 0.4 0.4 2.4 2.4 Units A A mA mA V V DATA RETENTION CHARACTERISTICS (TA = -55C to +125C) Parameter Symbol Conditions -20 Min Data Retention Supply Voltage Data Retention Current V DR CS V CC -0.2V I CCDR1 V CC = 3V -25 Typ Max Min 5.5 2.0 8.0 12.8 2.0 FIG. 2 Typ Max Min 5.5 2.0 8.0 12.8 -35 -45 Typ Max Min Typ Max 5.5 2.0 8.0 12.8 Units 5.5 8.0 12.8 AC TEST CONDITIONS AC TEST CIRCUIT Parameter I OL Current Source VZ D.U.T. 1.5V (Bipolar Supply) C eff = 50 pf I OH Current Source White Electronic Designs Corporation * Phoenix, AZ * (602) 437-1520 2 Typ Unit Input Pulse Levels VIL = 0, VIH = 3.0 V Input Rise and Fall 5 ns Input and Output Reference Level 1.5 V Output Timing Reference Level 1.5 V NOTES: V Z is programmable from -2V to +7V. I OL & IOH programmable from 0 to 16mA. Tester Impedance Z0 = 75 . V Z is typically the midpoint of VOH and V OL. I OL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance. V mA WS512K8-XCX AC CHARACTERISTICS (VCC = 5.0V, GND = 0V, TA = -55C to +125C) Parameter Symbol Read Cycle -20 Min Read Cycle Time t RC Address Access Time t AA Output Hold from Address Change t OH Chip Select Access Time t ACS -25 Max Min 20 -35 Max Min 25 35 20 3 ns 45 ns 45 ns 35 ns 3 25 10 Units Max 35 3 20 Min 45 25 3 -45 Max ns 35 Output Enable to Output Valid t OE Chip Select to Output in Low Z t CLZ 1 3 3 10 3 25 3 Output Enable to Output in Low Z t OLZ 1 0 0 0 0 Chip Disable to Output in High Z t CHZ 1 15 17 20 30 ns Output Disable to Output in High Z t OHZ 1 12 15 20 25 ns ns ns 1. This parameter is guaranteed by design but not tested. AC CHARACTERISTICS (VCC = 5.0V, GND =0V, TA = -55C to +125C) Parameter Symbol Write Cycle -20 Min -25 Max Min -35 Max Min -45 Max Min Units Max Write Cycle Time t WC 20 25 35 45 ns Chip Select to End of Write t CW 16 20 25 30 ns Address Valid to End of Write t AW 16 20 25 30 ns Data Valid to End of Write t DW 15 15 20 25 ns Write Pulse Width t WP 16 20 25 30 ns Address Setup Time t AS 2 2 2 2 ns Address Hold Time t AH 2 2 2 2 ns Output Active from End of Write t OW 1 4 5 5 5 Write Enable to Output in High Z t WHZ 1 Data Hold Time t DH 10 0 1 1 15 0 1 20 0 1 ns 25 ns ns 1. This parameter is guaranteed by design but not tested. 3 White Electronic Designs Corporation * Phoenix, AZ * (602) 437-1520 WS512K8-XCX FIG. 3 TIMING WAVEFORM - READ CYCLE tRC ADDRESS tAA CS tRC tCHZ tACS ADDRESS tCLZ tAA OE tOE tOLZ tOH DATA I/O PREVIOUS DATA VALID DATA I/O DATA VALID tOHZ DATA VALID HIGH IMPEDANCE READ CYCLE 1 (CS = OE = VIL, WE = VIH) READ CYCLE 2 (WE = VIH) FIG. 4 WRITE CYCLE - WE CONTROLLED tWC ADDRESS tAW tAH tCW CS tAS tWP WE tOW tWHZ tDW DATA I/O tDH DATA VALID WRITE CYCLE 1, WE CONTROLLED FIG. 5 WRITE CYCLE - CS CONTROLLED tWC WS32K32-XHX ADDRESS tAS tAW tAH tCW CS tWP WE tDW DATA I/O DATA VALID WRITE CYCLE 2, CS CONTROLLED White Electronic Designs Corporation * Phoenix, AZ * (602) 437-1520 4 tDH WS512K8-XCX PACKAGE 300: 32 PIN, CERAMIC DIP, SINGLE CAVITY SIDE BRAZED 42.4 (1.670) 0.4 (0.016) 15.04 (0.592) 0.3 (0.012) 4.34 (0.171) 0.79 (0.031) PIN 1 IDENTIFIER 3.2 (0.125) MIN 0.84 (0.033) 0.4 (0.014) 2.5 (0.100) TYP 1.27 (0.050) 0.1 (0.005) 0.46 (0.018) 0.05 (0.002) 0.25 (0.010) 0.05 (0.002) 15.25 (0.600) 0.25 (0.010) ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES 5 White Electronic Designs Corporation * Phoenix, AZ * (602) 437-1520 WS512K8-XCX ORDERING INFORMATION W S 512K 8 - XXX C X X LEAD FINISH: Blank = Gold plated leads A = Solder dip leads DEVICE GRADE: Q = MIL-STD-883 Compliant M = Military Screened -55C to +125C I = Industrial -40C to +85C C = Commercial 0C to +70C PACKAGE: C = Ceramic 0.600" DIP (Package 300) ACCESS TIME (ns) ORGANIZATION, 512K x 8 SRAM WHITE MICROELECTRONICS DEVICE TYPE SPEED PACKAGE SMD NO. 512K x 8 SRAM 45ns 32 pin DIP 5962-92078 06HTX 512K x 8 SRAM 35ns 32 pin DIP 5962-92078 07HTX 512K x 8 SRAM 25ns 32 pin DIP 5962-92078 08HTX 512K x 8 SRAM 20ns 32 pin DIP 5962-92078 09HTX White Electronic Designs Corporation * Phoenix, AZ * (602) 437-1520 6