1White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
HI-RELIABILITY PRODUCT
WS512K8-XCX
512Kx8 SRAM MODULE, SMD 5962-92078
FEATURES
■Access Times 20, 25, 35, 45ns
■Standard Microcircuit Drawing, 5962-92078
■MIL-STD-883 Compliant Devices Available
■Rad Tolerant Devices Available
■JEDEC Standard 32 pin, Hermetic Ceramic DIP (Package 300)
■Commercial, Industrial andMilitary Temperature Range
(-55°C to +125°C)
■Organized as 512K x 8
■5 Volt Power Supply
■Low Power CMOS
■TTL Compatible Inputs and Outputs
■Battery Back-Up Operation
PIN CONFIGURATION
TOP VIEW
FIG. 1
BLOCK DIAGRAM
128K x 8
I/O0-7
128K x 8 128K x 8 128K x 8
A0-16
OE
Decoder
WE
CS
A17
A18
PIN DESCRIPTION
A0-18 Address Inputs
I/O0-7 Data Input/Output
CS Chip Select
OE Output Enable
WE Write Enable
VCC +5.0V Power
GND Ground
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
V
CC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CS
I/O7
I/O6
I/O5
I/O4
I/O3
May 1999 Rev. 2
2
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
WS512K8-XCX
FIG. 2
AC TEST CIRCUIT
I
Current Source
D.U.T.
C = 50 pf
eff
I
OL
V
≈
1.5V
(Bipolar Supply)
Z
Current Source
OH
TRUTH TABLE
Parameter
Symbol
Condition Max Unit
Input capacitance CIN
V
IN
= 0V, f = 1.0MHz
45 pF
Output capicitance COUT
V
OUT
= 0V, f = 1.0MHz
45 pF
This parameter is guaranteed by design but not tested.
CAPACITANCE
(TA = +25°C)
AC TEST CONDITIONS
Parameter Typ Unit
Input Pulse Levels VIL = 0, VIH = 3.0 V
Input Rise and Fall 5 ns
Input and Output Reference Level 1.5 V
Output Timing Reference Level 1.5 V
NOTES:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75 Ω.
VZ is typically the midpoint of VOH and VOL.
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Min Max Unit
Operating Temperature TA-55 +125 °C
Storage Temperature TSTG -65 +150 °C
Signal Voltage Relative to GND VG-0.5 Vcc+0.5 V
Junction Temperature TJ150 °C
Supply Voltage VCC -0.5 7.0 V
RECOMMENDED OPERATING CONDITIONS
Parameter Symbol Min Max Unit
Supply Voltage VCC 4.5 5.5 V
Input High Voltage VIH 2.2 VCC + 0.3 V
Input Low Voltage VIL -0.5 +0.8 V
Operating Temp. (Mil.) TA-55 +125 °C
CS OE WE Mode Data I/O Power
H X X Standby High Z Standby
L L H Read Data Out Active
L X L Write Data In Active
L H H Out Disable High Z Active
DC CHARACTERISTICS
(VCC = 5.0V, GND = 0V, TA = -55°C to +125°C)
Parameter Symbol Conditions -20 -25 -35 -45 Units
Min Max Min Max Min Max Min Max
Input Leakage Current ILI VCC = 5.5, VIN = GND to VCC 10 10 10 10 µA
Output Leakage Current ILO CS = VIH, OE = VIH, VOUT = GND to VCC 10 10 10 10 µA
Operating Supply Current ICC CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5 210 210 210 210 mA
Standby Current ISB CS = VIH, OE = VIH, f = 5MHz 80 60 60 55 mA
Output Low Voltage VOL IOL = 8mA, Vcc = 4.5 0.4 0.4 0.4 0.4 V
Output High Voltage VOH IOH = -4.0mA, Vcc = 4.5 2.4 2.4 2.4 2.4 V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
DATA RETENTION CHARACTERISTICS
(TA = -55°C to +125°C)
Parameter Symbol Conditions -20 -25 -35 -45 Units
Min Typ Max Min Typ Max Min Typ Max Min Typ Max
Data Retention Supply Voltage VDR CS ≥ VCC -0.2V 2.0 5.5 2.0 5.5 2.0 5.5 2.0 5.5 V
Data Retention Current ICCDR1 VCC = 3V 8.0 12.8 8.0 12.8 8.0 12.8 8.0 12.8 mA
3White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
WS512K8-XCX
AC CHARACTERISTICS
(VCC = 5.0V, GND = 0V, TA = -55°C to +125°C)
AC CHARACTERISTICS
(VCC = 5.0V, GND =0V, TA = -55°C to +125°C)
Parameter Symbol -20 -25 -35 -45 Units
Write Cycle Min Max Min Max Min Max Min Max
Write Cycle Time tWC 20 25 35 45 ns
Chip Select to End of Write tCW 16 20 25 30 ns
Address Valid to End of Write tAW 16 20 25 30 ns
Data Valid to End of Write tDW 15 15 20 25 ns
Write Pulse Width tWP 16 20 25 30 ns
Address Setup Time tAS 22 2 2ns
Address Hold Time tAH 22 2 2ns
Output Active from End of Write tOW145 5 5ns
Write Enable to Output in High Z tWHZ110 0 15 0 20 0 25 ns
Data Hold Time tDH 11 1 1ns
1. This parameter is guaranteed by design but not tested.
Parameter Symbol -20 -25 -35 -45 Units
Read Cycle Min Max Min Max Min Max Min Max
Read Cycle Time tRC 20 25 35 45 ns
Address Access Time tAA 20 25 35 45 ns
Output Hold from Address Change tOH 333 3ns
Chip Select Access Time tACS 20 25 35 45 ns
Output Enable to Output Valid tOE 10 10 25 35 ns
Chip Select to Output in Low Z tCLZ1333 3ns
Output Enable to Output in Low Z tOLZ1000 0ns
Chip Disable to Output in High Z tCHZ115 17 20 30 ns
Output Disable to Output in High Z tOHZ112 15 20 25 ns
1. This parameter is guaranteed by design but not tested.
4
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
WS512K8-XCX
WS32K32-XHX
FIG. 3
TIMING WAVEFORM - READ CYCLE
FIG. 5
WRITE CYCLE - CS CONTROLLED
FIG. 4
WRITE CYCLE - WE CONTROLLED
ADDRESS
DATA I/O
WRITE CYCLE 1, WE CONTROLLED
t
AW
t
CW
t
AH
t
WP
t
DW
t
WHZ
t
AS
t
OW
t
DH
t
WC
DATA VALID
CS
WE
ADDRESS
DATA I/O
WRITE CYCLE 2, CS CONTROLLED
t
AW
t
AS
t
CW
t
AH
t
WP
t
DH
t
DW
t
WC
CS
WE
DATA VALID
ADDRESS
DATA I/O
READ CYCLE 2 (WE = V
IH
)
t
AA
t
ACS
t
OE
t
CLZ
t
OLZ
t
OHZ
t
RC
DATA VALID
HIGH IMPEDANCE
CS
OE
t
CHZ
ADDRESS
DATA I/O
READ CYCLE 1 (CS = OE = VIL, WE = VIH)
tAA
tOH
tRC
DATA VALIDPREVIOUS DATA VALID
5White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
WS512K8-XCX
PACKAGE 300: 32 PIN, CERAMIC DIP, SINGLE CAVITY SIDE BRAZED
2.5 (0.100)
TYP 1.27 (0.050)
± 0.1 (0.005) 0.46 (0.018)
± 0.05 (0.002)
0.84 (0.033)
± 0.4 (0.014)
3.2 (0.125) MIN
15.04 (0.592)
± 0.3 (0.012)
0.25 (0.010)
± 0.05 (0.002)
15.25 (0.600)
± 0.25 (0.010)
42.4 (1.670) ± 0.4 (0.016)
4.34 (0.171) ± 0.79 (0.031)
PIN 1 IDENTIFIER
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
6
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
WS512K8-XCX
LEAD FINISH:
Blank = Gold plated leads
A = Solder dip leads
DEVICE GRADE:
Q = MIL-STD-883 Compliant
M = Military Screened -55°C to +125°C
I = Industrial -40°C to +85°C
C = Commercial 0°C to +70°C
PACKAGE:
C = Ceramic 0.600" DIP (Package 300)
ACCESS TIME (ns)
ORGANIZATION, 512K x 8
SRAM
WHITE MICROELECTRONICS
ORDERING INFORMATION
DEVICE TYPE SPEED PACKAGE SMD NO.
512K x 8 SRAM 45ns 32 pin DIP 5962-92078 06HTX
512K x 8 SRAM 35ns 32 pin DIP 5962-92078 07HTX
512K x 8 SRAM 25ns 32 pin DIP 5962-92078 08HTX
512K x 8 SRAM 20ns 32 pin DIP 5962-92078 09HTX
W S 512K 8 - XXX C X X
