5STF 13F1220 5STF 13F1220 Old part no. TR 918-1250-12 Fast Thyristor Properties Amplifying gate High operational capability Optimized turn-off parameters Applications Power switching applications Key Parameters V DRM, V RRM = 1 200 I TAV = 1 252 I TSM = 21.0 V TO = 1.772 r T = 0.248 t q = 20.0 V A kA V m s Types VRRM, VDRM 5STF 13F1220..1225 5STF 13F1020..1025 1 200 V 1 000 V Conditions: Tj = -40 / 125 C, half sine waveform, f = 50 Hz Mechanical Data Fm Mounting force m Weight DS Surface creepage distance 25 mm Da Air strike distance 13 mm 22 2 kN 0.48 kg Fig. 1 Case ABB s.r.o. Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic tel.: +420 261 306 250, http://www.abb.com/semiconductors TS - TR/187/05 Jul-10 1 of 6 5STF 13F1220 Maximum Ratings VRRM VDRM ITRMS Repetitive peak reverse and off-state voltage Maximum Limits Unit 1 200 1 000 V 1 966 A 1 252 A tp = 10 ms tp = 8.3 ms 21 000 22 400 A tp = 10 ms tp = 8.3 ms 2 205 000 2 080 000 A2s 800 A/s 1 000 V/s 5STF 13F1220..1225 5STF 13F1020..1025 Tj = -40 / 125 C RMS on-state current Tc = 70 C, half sine waveform, f = 50 Hz ITAVm Average on-state current Tc = 70 C, half sine waveform, f = 50 Hz ITSM Peak non-repetitive surge half sine pulse, VR = 0 V I2t Limiting load integral half sine pulse, VR = 0 V (diT/dt)cr Critical rate of rise of on-state current IT = ITAVm, half sine waveform, f = 50 Hz, VD = 2/3 VDRM, tr = 0.3 s, IGT = 2 A (dvD/dt)cr Critical rate of rise of off-state voltage VD = 2/3 VDRM PGAVm Maximum average gate power losses 3 W IFGM Peak gate current 10 A VFGM Peak gate voltage 12 V VRGM Reverse peak gate voltage 10 V Tjmin - Tjmax Operating temperature range -40 / 125 C Tstgmin Tstgmax Storage temperature range -40 / 125 C Unless otherwise specified Tj = 125 C ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - TR/187/05 Jul-10 2 of 6 5STF 13F1220 Characteristics Value min. VTM typ. Maximum peak on-state voltage Unit max. 2.270 V ITM = 2 000 A VT0 Threshold voltage 1.772 V rT Slope resistance 0.248 m 150 mA 150 mA 2.0 s 20.0 s IT1 = 1 963 A, IT2 = 5 890 A IDM Peak off-state current VD = VDRM IRM Peak reverse current VR = VRRM tgd Delay time Tj = 25 C, VD = 0.4 VDRM, ITM = ITAVm, tr = 0.3 s, IGT = 2 A tq Turn-off time IT = 1 000 A, diT/dt = -50 A/s, VR = 100 V, VD = 2/3 VDRM, dvD/dt = 50 V/s group of tq 5STF 13F1220 5STF 13F1020 5STF 13F1225 5STF 13F1025 Qrr 25.0 Recovery charge 200 C 100 A the same conditions as at tq IrrM Reverse recovery current the same conditions as at tq IH Holding current Tj = 25 C Tj = 125 C 250 150 mA IL Latching current Tj = 25 C Tj = 125 C 1 500 1 000 mA VGT Gate trigger voltage Tj = - 40 C Tj = 25 C Tj = 125 C VD = 12V, IT = 4 A IGT Gate trigger current VD = 12V, IT = 4 A Tj = - 40 C Tj = 25 C Tj = 125 C V 0.25 4 3 2 mA 10 500 250 150 Unless otherwise specified Tj = 125 C ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - TR/187/05 Jul-10 3 of 6 5STF 13F1220 Thermal Parameters Thermal resistance junction to case Rthjc Value Unit 16.0 K/kW double side cooling anode side cooling 25.0 cathode side cooling 45.0 Thermal resistance case to heatsink Rthch 4.0 K/kW double side cooling single side cooling 8.0 Transient Thermal Impedance i 1 2 3 4 i ( s ) 0.4653 0.1533 0.0375 0.0034 Ri( K/kW ) 5.50 7.24 2.00 1.34 4 Z thjc = R i (1 - exp( -t / i )) i =1 Conditions: Fm = 22 2 kN, Double side cooled Correction for periodic waveforms 180 sine: add 1.3 K/kW 180 rectangular: add 1.8 K/kW 120 rectangular: add 3.0 K/kW 60 rectangular: add 5.1 K/kW Transient therm al im pedance junction to case Zthjc ( K/kW ) Analytical function for transient thermal impedance 18 16 14 12 10 8 6 4 2 0 0,001 0,01 0,1 1 10 Square w ave pulse duration t d ( s ) Fig. 2 Dependence transient thermal impedance junction to case on square pulse ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - TR/187/05 Jul-10 4 of 6 T j = 125 C 25 C 9000 34 3,2 2 i dt 30 2,8 26 2,4 22 2 18 1,6 8000 7000 6000 i 2dt (106 A2s) 10000 ITSM ( kA ) IT ( A ) 5STF 13F1220 5000 4000 3000 14 1,2 I TSM 2000 10 0,8 1000 0 6 1 2 3 4 5 VT (V) PT ( W ) Fig. 3 Maximum on-state characteristics t ( ms ) 0,4 100 Fig. 4 Surge on-state current vs. pulse length, half sine wave, single pulse, VR = 0 V, Tj = Tjmax = 30 60 90 120 180 DC 3500 10 3000 = 30 60 90120 180 270 DC 3500 PT ( W ) 0 1 3000 2500 2500 2000 2000 1500 1500 1000 1000 500 500 0 0 0 400 800 1200 1600 0 400 800 I TAV ( A ) Fig. 5 On-state power loss vs. average on-state current, sine waveform, f = 50 Hz, T = 1/f 1200 1600 I TAV ( A ) Fig. 6 On-state power loss vs. average on-state current, square waveform, f = 50 Hz, T = 1/f ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - TR/187/05 Jul-10 5 of 6 130 130 TC ( C ) TC ( C ) 5STF 13F1220 120 120 110 110 100 100 90 90 80 80 70 DC = 30 60 60 90 120 70 DC 180 = 30 60 0 400 800 1200 1600 0 400 60 90 120 180 800 1600 I TAV ( A ) I TAV ( A ) Fig. 7 Max. case temperature vs. aver. on-state current, sine waveform, f = 50 Hz, T = 1/f 1200 270 Fig. 8 Max. case temperature vs. aver. on-state current, square waveform, f = 50 Hz, T = 1/f Notes: ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - TR/187/05 Jul-10 6 of 6