TIP35C - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

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"   !

. . . for general–purpose power amplifier and switching applications.

•25 A Collector Current

•Low Leakage Current — ICEO = 1.0 mA @ 30 and 60 V

•Excellent DC Gain — hFE = 40 Typ @ 15 A

•High Current Gain Bandwidth Product — hfe = 3.0 min @ IC = 1.0 A,

f = 1.0 MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎ

Symbol

ÎÎÎÎ

TIP35A

TIP36A

ÎÎÎ

TIP35B

TIP36B

ÎÎÎÎ

TIP35C

TIP36C

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎ

VCEO

ÎÎÎÎ

60 V

ÎÎÎ

80 V

ÎÎÎÎ

100 V

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎ

VCB

ÎÎÎÎ

60 V

ÎÎÎ

80 V

ÎÎÎÎ

100 V

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎ

VEB

ÎÎÎÎÎÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Peak (1)

ÎÎÎ

ÎÎÎÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Base Current — Continuous

ÎÎÎ

ÎÎÎÎÎÎÎÎÎ

5.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation

@ TC = 25

Derate above 25

ÎÎÎ

ÎÎÎÎÎÎÎÎÎ

125

1.0

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎÎ

–65 to +150

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎ

Unclamped Inductive Load

ÎÎÎ

ESB

ÎÎÎÎÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

RθJC

ÎÎÎÎÎÎ

1.0

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎ

Junction–To–Free–Air Thermal Resistance

ÎÎÎÎÎ

RθJA

ÎÎÎÎÎÎ

35.7

ÎÎÎ

C/W

(1) Pulse Test: Pulse Width = 10 ms, Duty Cycle

10%.

Figure 1. Power Derating

TC, CASE TEMPERATURE (

0 125

175

100

75 100

125

25 150

PD, POWER DISSIPATION (WATTS)

Preferred devices are Motorola recommended choices for future use and best overall value.



SEMICONDUCTOR TECHNICAL DATA Order this document

by TIP35A/D

 Motorola, Inc. 1995













25 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

60–100 VOLTS

125 WATTS

*Motorola Preferred Device





 



CASE 340D–01

TO–218AC

     

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (1)

(IC = 30 mA, IB = 0) TIP35A, TIP36A

TIP35B, TIP36B

TIP35C, TIP36C

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

100

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Cutoff Current

(VCE = 30 V, IB = 0) TIP35A, TIP36A

(VCE = 60 V, IB = 0) TIP35B, TIP35C, TIP36B, TIP36C

ÎÎÎÎ

ICEO

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Cutoff Current

(VCE = Rated VCEO, VEB = 0)

ÎÎÎÎ

ICES

ÎÎÎÎ

—

ÎÎÎÎ

0.7

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Cutoff Current

(VEB = 5.0 V, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 1.5 A, VCE = 4.0 V)

(IC = 15 A, VCE = 4.0 V)

ÎÎÎÎ

hFE

ÎÎÎÎ

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 15 A, IB = 1.5 A)

(IC = 25 A, IB = 5.0 A)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

1.8

4.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage

(IC = 15 A, VCE = 4.0 V)

(IC = 25 A, VCE = 4.0 V)

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

—

ÎÎÎÎ

2.0

4.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain

(IC = 1.0 A, VCE = 10 V, f = 1.0 kHz)

ÎÎÎÎ

hfe

ÎÎÎÎ

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain — Bandwidth Product

(IC = 1.0 A, VCE = 10 V, f = 1.0 MHz)

ÎÎÎÎ

3.0

ÎÎÎÎ

—

ÎÎÎ

MHz

(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle

2.0%.

Figure 2. Switching Time Equivalent Test Circuits

0.3

Figure 3. Turn–On Time

IC, COLLECTOR CURRENT (AMPERES)

0.02 1.0 30

0.07

1.0

TJ = 25

IC/IB = 10

VCC = 30 V

VBE(off) = 2 V

t, TIME ( s)

0.5

0.3

0.1

0.05

0.5 3.0 5.0

0.03

0.7

2.0

0.7 7.0

0.2

2.0 20

td(PNP)

(NPN)

TURN–ON TIME

TURN–OFF TIME

+2.0 V

≤

20 ns

–11.0 V

10 TO 100

3.0RL

–30 VVCC

DUTY CYCLE

≈

2.0%

TO SCOPE

≤

20 ns

VBB +4.0 V

FOR CURVES OF FIGURES 3 & 4, RB & RL ARE VARIED.

INPUT LEVELS ARE APPROXIMATELY AS SHOWN.

FOR NPN, REVERSE ALL POLARITIES.

+9.0 V

–11.0 V

10 to 100

≤

20 ns

DUTY CYCLE

≈

2.0%

3.0RL

–30 VVCC

TO SCOPE

≤

20 ns

     

Motorola Bipolar Power Transistor Device Data

0.5 1.0 2.0 7.00.3 3.0 5.00.7 IC, COLLECTOR CURRENT (AMPERES)

Figure 4. Turn–Off Time

t, TIME ( s)

7.0

5.0

3.0

2.0

1.0

0.7

0.5

0.3

0.2

0.1 10 20 30

TJ = 25

VCC = 30 V

IC/IB = 10

IB1 = IB2

(PNP)

(NPN)

IC, COLLECTOR CURRENT (AMPS)

hFE, DC CURRENT GAIN

Figure 5. DC Current Gain

200

500

0.2 0.5 2.0 1000.1

100

1.0

VCE = 4.0 V

TJ = 25

5.0

10 205.0 50

PNP

NPN

1000

2.0

1.0

FORWARD BIAS

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 6 is based on TC = 25

C; TJ(pk) is

variable depending on power level. Second breakdown pulse

limits are valid for duty cycles to 10% but must be derated

when TC

C. Second breakdown limitations do not der-

ate the same as thermal limitations.

REVERSE BIAS

For inductive loads, high voltage and high current must be

sustained simultaneously during turn–off, in most cases, with

the base to emitter junction reverse biased. Under these

conditions the collector voltage must be held to a safe level

at or below a specific value of collector current. This can be

accomplished by several means such as active clamping,

RC snubbing, load line shaping, etc. The safe level for these

devices is specified as Reverse Bias Safe Operating Area

and represents the voltage–current conditions during re-

verse biased turn–off. This rating is verified under clamped

conditions so that the device is never subjected to an ava-

lanche mode. Figure 7 gives RBSOA characteristics.

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

7.0 201.0 50 100

0.2

0.5

SECONDARY BREAKDOWN

THERMAL LIMIT

BONDING WIRE LIMIT

1.0 ms

300

2.0

1.0

100

IC, COLLECTOR CURRENT (AMPS)

10 ms

Figure 6. Maximum Rated Forward Bias

Safe Operating Area

5.0

0.3

2.0 3.0 5.0 10 30 70

TC = 25

TIP35A, 36A

TIP35B, 36B

TIP35C, 36C

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

40 600 80 100

5.0

IC, COLLECTOR CURRENT (AMPS)

Figure 7. Maximum Rated Forward Bias

Safe Operating Area

10 20 30 50 70 90

≤

100

TIP35A

TIP36A

TIP35B

TIP36B

TIP35C

TIP36C

     

4 Motorola Bipolar Power Transistor Device Data

Figure 8. Inductive Load Switching

TEST CIRCUIT

VOLTAGE AND CURRENT WAVEFORMS

NOTES:

A. L1 and L2 are 10 mH, 0.11 Ω, Chicago Standard Transformer Corporation C–2688, or equivalent.

B. Input pulse width is increased until ICM = –3.0 A.

C. For NPN, reverse all polarities.

INPUT 50

MJE180 RBB1

RBB2 = 100

VBB2 = 0

VBB1 = 10 V

VCE MONITOR

(SEE NOTE A)

TUT

VCC = 10 V IC MONITOR

–

RS = 0.1

Ω

–

5.0 V

–3.0 A

–10 V

tw = 6.0 ms

(SEE NOTE B)

INPUT

VOLTAGE

COLLECTOR

CURRENT

COLLECTOR

VOLTAGE

V(BR)CER

100 ms

     

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 340D–01

TO–218AC

ISSUE A

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

BQEC

DIM MIN MAX MIN MAX

INCHESMILLIMETERS

A19.00 19.60 0.749 0.771

B14.00 14.50 0.551 0.570

C4.20 4.70 0.165 0.185

D1.00 1.30 0.040 0.051

E1.45 1.65 0.058 0.064

G5.21 5.72 0.206 0.225

H2.60 3.00 0.103 0.118

J0.40 0.60 0.016 0.023

K28.50 32.00 1.123 1.259

L14.70 15.30 0.579 0.602

Q4.00 4.25 0.158 0.167

S17.50 18.10 0.689 0.712

U3.40 3.80 0.134 0.149

V1.50 2.00 0.060 0.078

1 2 3

     

6 Motorola Bipolar Power Transistor Device Data

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TIP35A/D

*TIP35A/D*

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