STGFW30V60F, STGW30V60F, STGWT30V60F Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data Features * Maximum junction temperature: TJ = 175 C 1 * Tail-less switching off * VCE(sat) = 1.85 V (typ.) @ IC = 30 A 3 TO-3PF 2 * Tight parameters distribution 1 Tab * Safe paralleling * Low thermal resistance 2 3 3 2 1 1 TO-3P TO-247 Applications * Photovoltaic inverters Figure 1. Internal schematic diagram * Uninterruptible power supply * Welding * Power factor correction C (2, TAB) * Very high frequency converters Description G (1) This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. E (3) Table 1. Device summary Order codes Marking Package Packaging STGFW30V60F GFW30V60F TO-3PF Tube STGW30V60F GW30V60F TO-247 Tube STGWT30V60F GWT30V60F TO-3P Tube April 2014 This is information on a product in full production. DocID025005 Rev 4 1/19 www.st.com 19 Contents STGFW30V60F, STGW30V60F, STGWT30V60F Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................... 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5 2/19 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.1 TO-3PF, STGFW30V60F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.2 TO-247, STGW30V60F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 4.3 TO-3P, STGWT30V60F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 DocID025005 Rev 4 STGFW30V60F, STGW30V60F, STGWT30V60F 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-3P TO-3PF TO-247 VCES IC IC Collector-emitter voltage (VGE = 0) Continuous collector current at TC = 25 C Continuous collector current at TC = 100 C 600 V 60 (1) A (1) 60 30 30 A 120 120(1) A ICP(2) Pulsed collector current VGE Gate-emitter voltage PTOT Total dissipation at TC = 25 C VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; Tc = 25 C) TSTG Storage temperature range - 55 to 150 C Operating junction temperature - 55 to 175 C TJ 20 V 260 58 W 3.5 kV 1. Limited by maximum junction temperature. 2. Pulse width limited by maximum junction temperature. Table 3. Thermal data Value Symbol Parameter Unit TO-3P TO-3PF TO-247 RthJC Thermal resistance junction-case RthJA Thermal resistance junction-ambient DocID025005 Rev 4 0.58 2.6 50 C/W C/W 3/19 Electrical characteristics 2 STGFW30V60F, STGW30V60F, STGWT30V60F Electrical characteristics TJ = 25 C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) IC = 2 mA Min. Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current (VGE = 0) IGES Gate-emitter leakage current (VCE = 0) Unit V 1.85 VGE = 15 V, IC = 30 A Collector-emitter saturation TJ = 125 C voltage VGE = 15 V, IC = 30 A TJ = 175 C VGE(th) Max. 600 VGE = 15 V, IC = 30 A VCE(sat) Typ. 2.3 2.15 V 2.35 5 6 7 V VCE = 600 V 25 A VGE = 20 V 250 nA Table 5. Dynamic characteristics Symbol 4/19 Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 VCC = 480 V, IC = 30 A, VGE = 15 V, see Figure 26 Qge Gate-emitter charge Qgc Gate-collector charge DocID025005 Rev 4 Min. Typ. Max. Unit - 3750 - pF - 120 - pF - 77 - pF - 163 - nC - 28 - nC - 72 - nC STGFW30V60F, STGW30V60F, STGWT30V60F Electrical characteristics Table 6. IGBT switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Test conditions Min. Typ. Max. Unit Turn-on delay time - 45 - ns Current rise time - 16 - ns - 1500 - A/s - 189 - ns - 19 - ns Turn-on current slope VCE = 400 V, IC = 30 A, RG = 10 , VGE = 15 V, see Figure 25 Turn-off delay time Current fall time Eon(1) Turn-on switching losses - 383 - J Eoff(2) Turn-off switching losses - 233 - J Total switching losses - 616 - J Turn-on delay time - 42 - ns Current rise time - 17 - ns Turn-on current slope - 1337 - A/s - 193 - ns - 32 - ns Ets td(on) tr (di/dt)on td(off) tf VCE = 400 V, IC = 30 A, RG = 10 , VGE = 15 V, TJ = 175 C, see Figure 25 Turn-off delay time Current fall time Eon(1) Turn-on switching losses - 794 - J Eoff(2) Turn-off switching losses - 378 - J Total switching losses - 1172 - J Ets 1. Parameter Energy losses include reverse recovery of the external diode. The diode is the same of the copacked STGW30V60DF. 2. Turn-off losses include also the tail of the collector current. DocID025005 Rev 4 5/19 Electrical characteristics 2.1 STGFW30V60F, STGW30V60F, STGWT30V60F Electrical characteristics (curves) Figure 2. Power dissipation vs. case temperature for TO-247 and TO-3P AM17409v1 Ptot (W) Figure 3. Collector current vs. case temperature for TO-247 and TO-3P AM17410v1 IC (A) VGE =15 V, TJ = 175 C 60 250 50 200 40 150 30 100 20 50 0 0 10 25 50 0 0 75 100 125 150 175 TC(C) Figure 4. Power dissipation vs. case temperature for TO-3PF AM17409v2 Ptot (W) 60 25 50 75 100 125 150 175 TC(C) Figure 5. Collector current vs. case temperature for TO-3PF AM17410v2 IC (A) 25 50 20 40 15 30 10 20 5 10 0 0 25 50 75 100 125 0 0 TC(C) 150 Figure 6. Output characteristics (TJ=25C) 25 50 75 100 TC(C) 125 150 Figure 7. Output characteristics (TJ=175C) AM17411v1 IC (A) 120 VGE=15V 13V 100 AM17412v1 IC (A) 120 VGE=15V 13V 100 11V 80 80 60 60 9V 40 20 11V 9V 40 20 7V 0 0 6/19 1 2 3 4 VCE(V) DocID025005 Rev 4 0 0 1 2 3 4 VCE(V) STGFW30V60F, STGW30V60F, STGWT30V60F Figure 8. VCE(sat) vs. junction temperature AM17413v1 VCE(sat) (V) 3.2 VGE=15V IC=60A 3.0 Figure 9. VCE(sat) vs. collector current VCE(sat) (V) 3.2 3.0 AM17414v1 Tj=175C VGE=15V 2.8 2.6 2.8 2.6 2.2 2.0 IC=15A 1.8 1.6 0 50 100 150 Tj=25C 2.4 2.2 IC=30A 2.4 1.4 1.2 -50 Electrical characteristics TC(C) Figure 10. Safe operating area for TO-3PF 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 Tj=-40C 10 30 20 40 50 60 IC(A) Figure 11. Safe operating area for TO-247 and TO-3P AM17416v2 AM17416v1 IC (A) IC (A) 100 100 10s 10 10s 10 100s 100s 1ms 1ms 1 Single pulse, Tc=25C Tj<175C, VGE=15V 0.1 0.1 0.01 1 VCE(V) 100 10 Figure 12. Normalized VGE(th) vs junction temperature AM17419v1 VGE(th) (norm) 1 VCE=VGE IC=1mA Single pulse, Tc=25C Tj<175C, VGE=15V 0.01 1 VCE(V) 100 10 Figure 13. Normalized V(BR)CES vs. junction temperature AM17420v1 V(BR)CES (norm) IC=2mA 1.1 1.0 0.9 1.0 0.8 0.7 0.6 -50 0 50 100 150 TC(C) 0.9 -50 DocID025005 Rev 4 0 50 100 150 TC(C) 7/19 Electrical characteristics STGFW30V60F, STGW30V60F, STGWT30V60F Figure 14. Capacitance variations Figure 15. Gate charge vs. gate-emitter voltage AM17421v1 C(pF) 10000 AM17422v1 VGE(V) VCC = 480 V IC = 30 A 16 Cies 14 12 1000 10 8 Coes 6 Cres 100 4 2 10 0.1 10 1 Figure 16. Switching losses vs. collector current AM17423v1 E(J) Eon VCC=400V, VGE=15V Rg=10, Tj=175C 2000 1800 0 0 VCE(V) 50 25 75 100 125 150 175 Qg(nC) Figure 17. Switching losses vs. gate resistance AM17424v1 E(J) VCC=400V, VGE=15V IC=30A, Tj=175C 1200 Eon 1600 1000 1400 1200 800 1000 Eoff 800 Eoff 600 600 400 400 200 0 0 200 10 20 30 40 50 60 IC(A) Figure 18. Switching losses vs. junction temperature AM17425v1 E(J) VCC=400V, VGE=15V IC=30A, Rg=10 800 Eon 0 20 30 40 Rg() Figure 19. Switching losses vs. collector emitter voltage AM17426v1 E(J) 1100 700 10 Eon VGE=15V, Tj=175C IC=30A, Rg=10 900 600 700 500 Eoff 400 500 Eoff 300 300 200 100 8/19 0 25 50 75 100 125 150 TJ(C) 100 150 DocID025005 Rev 4 200 250 300 350 400 450 VCE(V) STGFW30V60F, STGW30V60F, STGWT30V60F Figure 20. Switching times vs. collector current t(ns) AM17427v1 VCC=400V, VGE=15V Electrical characteristics Figure 21. Switching times vs. gate resistance 1000 Tj=175C, Rg=10 AM17428v1 t(ns) tdoff VCC=400V, VGE=15V Tj=175C, IC=30A tdoff 100 tdon tr 100 tdon tf tf tr 10 0 20 10 30 40 50 60 IC(A) 10 0 10 20 30 40 Rg() Figure 22. Transfer characteristics AM17417v1 IC (A) Tj=-40C 100 Tj=175C Tj=25C 80 60 40 VCE = 10V 20 0 7 8 9 10 11 VGE(V) DocID025005 Rev 4 9/19 Electrical characteristics STGFW30V60F, STGW30V60F, STGWT30V60F Figure 23. Thermal data for TO-3PF ZthTO2T_A K d=0.5 0.2 0.1 10-1 0.05 0.02 0.01 Single pulse 10-2 10-5 10-4 10-2 10-3 tp (s) 10-1 Figure 24. Thermal data for TO-3P and TO-247 ZthTO2T_B K =0.5 0.2 0.1 0.05 -1 10 0.02 Zth=k Rthj-c =tp/t 0.01 Single pulse tp t -2 10 -5 10 10/19 -4 10 -3 10 DocID025005 Rev 4 -2 10 -1 10 tp (s) STGFW30V60F, STGW30V60F, STGWT30V60F 3 Test circuits Test circuits Figure 25. Test circuit for inductive load switching Figure 26. Gate charge test circuit AM01504v1 AM01505v1 Figure 27. Switching waveform 90% 10% VG 90% VCE 10% Tr(Voff) Tcross 90% IC 10% Td(off) Td(on) Tr(Ion) Ton Tf Toff AM01506v1 DocID025005 Rev 4 11/19 Package mechanical data 4 STGFW30V60F, STGW30V60F, STGWT30V60F Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 TO-3PF, STGFW30V60F Figure 28. TO-3PF drawing 7627132_D 12/19 DocID025005 Rev 4 STGFW30V60F, STGW30V60F, STGWT30V60F Package mechanical data Table 7. TO-3PF mechanical data mm Dim. Min. Typ. Max. A 5.30 5.70 C 2.80 3.20 D 3.10 3.50 D1 1.80 2.20 E 0.80 1.10 F 0.65 0.95 F2 1.80 2.20 G 10.30 11.50 G1 5.45 H 15.30 15.70 L 9.80 L2 22.80 23.20 L3 26.30 26.70 L4 43.20 44.40 L5 4.30 4.70 L6 24.30 24.70 L7 14.60 15 N 1.80 2.20 R 3.80 4.20 Dia 3.40 3.80 10 DocID025005 Rev 4 10.20 13/19 Package mechanical data 4.2 STGFW30V60F, STGW30V60F, STGWT30V60F TO-247, STGW30V60F Figure 29. TO-247 drawing 0075325_G 14/19 DocID025005 Rev 4 STGFW30V60F, STGW30V60F, STGWT30V60F Package mechanical data Table 8. TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 5.60 18.50 P 3.55 3.65 R 4.50 5.50 S 5.30 5.50 DocID025005 Rev 4 5.70 15/19 Package mechanical data 4.3 STGFW30V60F, STGW30V60F, STGWT30V60F TO-3P, STGWT30V60F Figure 30. TO-3P drawing 8045950_A 16/19 DocID025005 Rev 4 STGFW30V60F, STGW30V60F, STGWT30V60F Package mechanical data Table 9. TO-3P mechanical data mm Dim. Min. Typ. Max. A 4.60 5 A1 1.45 1.50 1.65 A2 1.20 1.40 1.60 b 0.80 1 1.20 b1 1.80 2.20 b2 2.80 3.20 c 0.55 0.60 0.75 D 19.70 19.90 20.10 D1 E 13.90 15.40 15.80 E1 13.60 E2 9.60 e 5.15 5.45 5.75 L 19.50 20 20.50 L1 3.50 L2 18.20 oP 3.10 18.40 18.60 3.30 Q 5 Q1 3.80 DocID025005 Rev 4 17/19 Revision history 5 STGFW30V60F, STGW30V60F, STGWT30V60F Revision history Table 10. Document revision history 18/19 Date Revision Changes 24-Jul-2013 1 Initial release. 29-Jul-2013 2 Updated Table 1: Device summary. 08-Oct-2013 3 Updated title, features and description in cover page. 08-Apr-2014 4 Updated Table 4: Static characteristics and Section 4: Package mechanical data. DocID025005 Rev 4 STGFW30V60F, STGW30V60F, STGWT30V60F Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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