This is information on a product in full production.
April 2014 DocID025005 Rev 4 1/19
19
STGFW30V60F,
STGW30V60F, STGWT30V60F
Trench gate field-stop IGBT, V series
600 V, 30 A very high speed
Datasheet
-
production data
Figure 1. Internal schematic diagram
Features
•Maximum junction temperature: T
J
= 175 °C
•Tail-less switching off
•V
CE(sat)
= 1.85 V (typ.) @ I
C
= 30 A
•Tight parameters distribution
•Safe paralleling
•Low thermal resistance
Applications
•Photovoltaic inverters
•Uninterrup tib le powe r suppl y
•Welding
•Power factor correction
•Very high frequency converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is p art of the V series of
IGBTs, which represent an optimum compromise
between conduction and switching losses to
maximize the efficiency of very high frequency
converters. Furthermore, a positive V
CE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
C (2, TAB)
G (1)
E (3)
1
111
23
TO-247 TO-3P
12
3
1
23
TO-3PF
Tab
Table 1. Device summary
Order codes Marking Package Packaging
STGFW30V60F GFW30V60F TO-3PF Tube
STGW30V60F GW30V60F TO-247 Tube
STGWT30V60F GWT30V60F TO-3P Tube
www.st.com
Contents STGFW30V60F, STGW30V60F, STGWT30V60F
2/19 DocID025005 Rev 4
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.1 TO-3PF, STGFW30V60F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.2 TO-247, STGW30V60F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
4.3 T O-3P, STGWT30V60F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
DocID025005 Rev 4 3/19
STGFW30V60F, STGW30V60F, STGWT30V60F Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-3P
TO-247 TO-3PF
V
CES
Collector-emitter voltage (V
GE
= 0) 600 V
I
C
Continu ous collec tor current at T
C
= 25 °C 60 60
(1)
1. Limited by maximum junction temperature.
A
I
C
Continu ous collec tor current at T
C
= 100 °C 30 30
(1)
A
I
CP(2)
2. Pulse width limited by maximum junction temperature.
Pulsed collector current 120 120
(1)
A
V
GE
Gate-emitter voltage ±20 V
P
TOT
Total dissipation at T
C
= 25 °C 260 58 W
V
ISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t = 1 s; Tc = 25 °C) 3.5 kV
T
STG
Storage temperature range - 55 to 150 °C
T
J
Operating junction temperature - 55 to 175 °C
Table 3. Thermal data
Symbol Parameter
Value
Unit
TO-3P
TO-247 TO-3PF
R
thJC
Thermal resistance junction-case 0.58 2.6 °C/W
R
thJA
Thermal resistance junction-ambient 50 °C/W
Electrical characteristics STGFW30V60F, STGW30V60F, STGWT30V60F
4/19 DocID025005 Rev 4
2 Electrical characteristics
T
J
= 25 °C unless otherwise specified.
Table 4. Static characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)CES
Collector-emitter
breakdown voltage
(V
GE
= 0) I
C
= 2 mA 600 V
V
CE(sat)
Collect or-emitter sat uration
voltage
V
GE
= 15 V, I
C
= 30 A 1.85 2.3
V
V
GE
= 15 V, I
C
= 30 A
T
J
= 125 °C 2.15
V
GE
= 15 V, I
C
= 30 A
T
J
= 175 °C 2.35
V
GE(th)
Gate threshold voltage V
CE
= V
GE
, I
C
= 1 mA 5 6 7 V
I
CES
Collector cut-off current
(V
GE
= 0) V
CE
= 600 V 25 µA
I
GES
Gate-emitter leakage
current (V
CE
= 0) V
GE
= ± 20 V 250 nA
Table 5. Dynamic characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
ies
Input cap ac itance
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0
-3750- pF
C
oes
Output capacitance - 120 - pF
C
res
Reverse transfer
capacitance -77-pF
Q
g
Total gate charge V
CC
= 480 V, I
C
= 30 A,
V
GE
= 15 V, see Figure 26
-163-nC
Q
ge
Gate-emitter charge - 28 - nC
Q
gc
Gate- collector charge - 72 - n C
DocID025005 Rev 4 5/19
STGFW 30V 60F, ST GW3 0V 60F , STG WT30 V6 0F Elect ri cal ch ara cter ist ics
Table 6. IGBT switching characteristics (inductive load)
Symbol Parameter Test condition s Min. Typ. Max. Unit
t
d(on)
Turn-on delay time
V
CE
= 400 V, I
C
= 30 A,
R
G
= 10 Ω, V
GE
= 15 V,
see Figure 25
-45-ns
t
r
Current rise time - 16 - ns
(di/dt)
on
Turn-on current slope - 1500 - A/µs
t
d
(
off
) Turn-off delay time - 189 - ns
t
f
Current fall time - 19 - ns
E
on(1)
1. Energy losses include reverse recovery of the external diode. The diode is the same of the copacked
STGW30V60DF.
Turn-on switching losses - 383 - µJ
E
off(2)
2. Turn-off losses include also the tail of the collector current.
Tu rn-off switching losses - 233 - µJ
E
ts
Total switching losses - 616 - µJ
t
d(on)
Turn-on delay time
V
CE
= 400 V, I
C
= 30 A,
R
G
= 10 Ω, V
GE
= 15 V,
T
J
= 175 °C, see Figure 25
-42-ns
t
r
Current rise time - 17 - ns
(di/dt)
on
Turn-on current slope - 1337 - A/µs
t
d
(
off
) Turn-off delay time - 193 - ns
t
f
Current fall time - 32 - ns
E
on(1)
Turn-on switching losses - 794 - µJ
E
off(2)
Tu rn-off switching losses - 378 - µJ
E
ts
Total switching losses - 11 72 - µJ
Electrical characteristics STGFW30V60F, STGW30V60F, STGWT30V60F
6/19 DocID025005 Rev 4
2.1 Electrical characterist ics (curves)
Figure 2. Power dissipation vs. case
temperature for TO-247 and TO-3P Figure 3. Collector current vs. case temperature
for TO-247 and TO-3P
Figure 4. Power dissipation vs. case
temperature for TO-3PF Figure 5. Collector current vs. case temperature
for TO-3PF
Figure 6. Output characteristics (T
J
=25°C) Figure 7. Output characteristics (T
J
=175°C)
P
tot
150
100
50
0
050 100
(W)
25 75 125
200
150 175 T
C
(°C)
250
AM17409v1
I
C
30
20
10
0
050 T
C
(°C)
100
(A)
25 75 125
40
50
150 175
60
V
GE
=15 V, T
J
= 175 °C
AM17410v1
30
P
tot
20
10
0
050100
(W)
25 75 125
40
50
60
AM17409v2
150 T
C
(°C)
I
C
15
10
5
0
0 50 100
(A)
T
C
(°C)
25 75 125
20
25
150
AM17410v2
I
C
80
60
20
0
013
(A)
24
100
V
CE
(V)
40 9V
11V
13V
VGE=15V
120
AM17411v1
I
C
80
60
20
0
013
(A)
24
100
120
V
CE
(V)
40
9V
11V
13V
7V
VGE=15V
AM17412v1
DocID025005 Rev 4 7/19
STGFW 30V 60F, ST GW3 0V 60F , STG WT30 V6 0F Elect ri cal ch ara cter ist ics
Figure 8. V
CE(sat)
vs. junction temperature Figure 9. V
CE(sat)
vs. collector current
Figure 10. Safe operating area for TO-3PF Figure 11. Safe operating area for TO-247 and
TO-3P
Figure 12. Normalized V
GE(th)
vs junction
temperature Fig ure 13. Normali ze d V
(BR)CES
vs. junction
temperature
V
CE(sat)
2.0
1.8
1.4
1.2
-50 0100
(V)
50 150
2.2
2.4
T
C
(°C)
1.6
2.6
2.8
V
GE
=15V I
C
=60A
I
C
=30A
I
C
=15A
3.0
3.2
AM17413v1
1.6
1.4
1.0
0.8010 30
20 40
1.8
2.0
I
C
(A)
1.2
2.2
2.4
V
GE
=15V T
j
=175°C
T
j
=25°C
T
j
=-40°C
60
50
V
CE(sat)
(V)
2.6
2.8
3.0
3.2
AM17414v1
I
C
100
10
0.1
0.01
1
(A)
10 VCE(V)
1
10μs
100μs
1ms
100
Single pulse, Tc=25°C
Tj<175°C, VGE=15V
AM17416v1
V
GE(th)
0.8
0.6
-50
(norm)
TC(°C)
0.7
0
0.9
1.0
50 100 150
VCE=VGE
IC=1mA
AM17419v1
V
(BR)CES
1.1
0.9
-50
(norm)
TC(°C)
1.0
050 100 150
I
C
=2mA
AM17420v1
Electrical characteristics STGFW30V60F, STGW30V60F, STGWT30V60F
8/19 DocID025005 Rev 4
Figure 14. Capacitance variations Figure 15. Gate charge vs. gate-emitter voltage
Figure 16. Switching losses vs. collector
current Figure 17. Switching losses vs. gate resistance
Figure 18. Switching losses vs. junction
temperature F igure 19. Switch ing losses vs. co llec tor
emitter voltage
C(pF)
10
0.1 VCE(V)
1000
110
100
10000
Cies
Coes
Cres
AM17421v1
VGE(V)
0
0Qg(nC)
50 100
2
150 175
4
6
8
10
12
14
16
25 125
75
V
CC
= 480 V
I
C
= 30 A
AM17422v1
E(μJ)
0
0IC(A)
400
10 20
200
600
30 40
VCC=400V, VGE=15V
Rg=10Ω, Tj=175°C
800
1000
1200
1400
Eon
Eoff
50 60
1600
1800
2000
AM17423v1
E(μJ)
0Rg(Ω)
400
10 20
200
600
30 40
VCC=400V, VGE=15V
IC=30A, Tj=175°C
800
1000
1200
Eon
Eoff
AM17424v1
E(μJ)
25 TJ(°C)
200
50 75
100
300
100 125
VCC=400V, VGE=15V
IC=30A, Rg=10Ω
400
500
600
Eon
Eoff
150
0
700
800
AM17425v1
E(μJ)
150 VCE(V)
500
200 250
100
900
300 350
VGE=15V, Tj=175°C
IC=30A, Rg=10Ω
Eon
Eoff
300
700
1100
400 450
AM17426v1
DocID025005 Rev 4 9/19
STGFW 30V 60F, ST GW3 0V 60F , STG WT30 V6 0F Elect ri cal ch ara cter ist ics
Figure 20. Switching times vs. collector current Figure 21. Switching times vs. gate resistance
Figure 22. Transfer characteristics
t(ns)
0IC(A)
10 20
10
30 40
VCC=400V,
Tj=175°C,
VGE=15V
Rg=10Ω
tdoff
tdon
100
tf
tr
50 60
AM17427v1
t(ns)
0Rg(Ω)
10 20
10
30 40
VCC=400V,
Tj=175°C,
VGE=15V
IC=30A
tdoff
tdon
100 tr
tf
1000
AM17428v1
I
C
80
60
20
0
7
(A)
8VGE(V)
40
Tj=175°C
Tj=25°C
Tj=-40°C
9
100
10 11
V
CE
= 10V
AM17417v1
Electrical characteristics STGFW30V60F, STGW30V60F, STGWT30V60F
10/19 DocID025005 Rev 4
Figure 23. Thermal data for TO-3PF
Figure 24. Thermal data for TO-3P and TO-247
ZthTO2T_A
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s)
10
-2
10
-1
K
Single pulse
d=0.5
0.01
0.02
0.05
0.1
0.2
10-5 10-4 10-3 10-2 10-1
t
p(s)
10-2
10-1
K
0.2
0.05
0.02
0.01
0.1
Zth=k Rthj-c
δ=tp/t
tp
t
Single pulse
δ=0.5
ZthTO2T_B
DocID025005 Rev 4 11/19
STGFW30V60F, STGW30V60F, STGWT30V60F Test circuits
3 Test circuits
Figure 25. Test circuit for inductive load
switching Figure 26. Gate charge test circuit
Figure 27. Switching waveform
AM01505v1
Package mechanical data STGFW30V60F, STGW30V60F, STGWT30V60F
12/19 DocID025005 Rev 4
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST tradema rk .
4.1 TO-3PF, STGFW30V60F
Figure 28. TO-3PF drawing
7627132_D
DocID025005 Rev 4 13/19
STGFW30V60F, STGW30V60F, STGWT30V60F Package mechanical data
Table 7. TO-3PF mechanical data
Dim. mm
Min. Typ. Max.
A5.30 5.70
C2.80 3.20
D3.10 3.50
D1 1.80 2.20
E0.80 1.10
F0.65 0.95
F2 1.80 2.20
G10.30 11.50
G1 5.45
H 15.30 15.70
L 9.80 10 10.20
L2 22.80 23.20
L3 26.30 26.70
L4 43.20 44.40
L5 4.30 4.70
L6 24.30 24.70
L7 14.60 15
N1.80 2.20
R3.80 4.20
Dia 3.40 3.80
Package mechanical data STGFW30V60F, STGW30V60F, STGWT30V60F
14/19 DocID025005 Rev 4
4.2 TO-247, STGW30V60F
Figure 29. TO-2 47 drawing
0075325_G
DocID025005 Rev 4 15/19
STGFW30V60F, STGW30V60F, STGWT30V60F Package mechanical data
Table 8. TO-247 mechanical data
Dim. mm.
Min. Typ. Max.
A 4.85 5.15
A1 2.20 2.60
b1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
∅P 3.55 3.65
∅R 4.50 5.50
S 5.30 5.50 5.70
Package mechanical data STGFW30V60F, STGW30V60F, STGWT30V60F
16/19 DocID025005 Rev 4
4.3 TO-3P, STGWT30V60F
Figure 30. TO-3P drawin g
8045950_A
DocID025005 Rev 4 17/19
STGFW30V60F, STGW30V60F, STGWT30V60F Package mechanical data
Table 9. TO-3P mechanical data
Dim. mm
Min. Typ. Max.
A4.60 5
A1 1.45 1.50 1.65
A2 1.20 1.40 1.60
b 0.80 1 1.20
b1 1.80 2.20
b2 2.80 3.20
c 0.55 0.60 0.75
D 19.70 19.90 20.10
D1 13.90
E 15.40 15.80
E1 13.60
E2 9.60
e 5.15 5.45 5.75
L 19.50 20 20.50
L1 3.50
L2 18.20 18.40 18.60
øP 3.10 3.30
Q5
Q1 3.80
Revision history STGFW30V60F, STGW30V60F, STGWT30V60F
18/19 DocID025005 Rev 4
5 Revision history
Table 10. Document revision history
Date Revision Changes
24-Jul-2013 1 Initial release.
29-Jul-2013 2 Updated Tab le 1: Device summa ry.
08-Oct-2013 3 Updated title, features and description in cover page.
08-Apr-2014 4 Updated Table 4: Static characteristics and Section 4: Package
mechanical data.
DocID025005 Rev 4 19/19
STGFW 30V 60F, ST GW3 0V 60F , STG WT30 V6 0F
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