THIS PAGE INTENTIONALLY LEFT BLANK
11
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
SWITCHES - SPDT - SMT
11 - 224
HMC784MS8GE
GaAs MMIC 10 WATT T/R SWITCH
DC - 4 GHz
v00.0808
General Description
Features
Functional Diagram
Input P1dB: +40 dBm @ Vdd = +8V
High Third Order Intercept: +62 dBm
Positive Control: +3 to +8 V
Low Insertion Loss: 0.4 dB
MSOP8G Package: 14.8 mm2
Electrical Speci cations,
TA = +25° C, Vctl = 0/Vdd, Vdd = +5V (Unless Otherwise Stated), 50 Ohm System
Typical Applications
The HMC784MS8GE is ideal for:
• Cellular / 4G Infrastructure
• WiMAX, WiBro & Fixed Wireless
• Automotive Telematics
• Mobile Radio
• Test Equipment
The HMC784MS8GE is a high power SPDT switch in
an 8-lead MSOPG package for use in transmit-rece-
ive applications which require very low distortion at
high input signal power levels. The device can con-
trol signals from DC to 4 GHz. The design provides
exceptional intermodulation performance; > +60 dBm
third order intercept at +5V bias. RF1 and RF2 are
re ective shorts when “OFF”. On-chip circuitry allows
single positive supply operation from +3 Vdc to +8 Vdc
at very low DC current with control inputs compatible
with CMOS and most TTL logic families.
Parameter Frequency Min. Typ. Max. Units
Insertion Loss
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
DC - 4.0 GHz
0.4
0.6
0.8
0.9
1.3
0.6
0.8
1.1
1.3
2.0
dB
dB
dB
dB
dB
Isolation DC - 4.0 GHz 26 30 dB
Return Loss (On State)
DC - 1.0 GHz
DC - 2.0 GHz
DC - 3.0 GHz
DC - 4.0 GHz
35
30
20
10
dB
dB
dB
dB
Input Power for 0.1dB Compression
Vdd = +3V
Vdd = +5V
Vdd = +8V
0.1 - 4.0 GHz
32
37
38
dBm
dBm
dBm
Input Power for 1dB Compression
Vdd = +3V
Vdd = +5V
Vdd = +8V
0.1 - 4.0 GHz
32
35
38
35
38
41
dBm
dBm
dBm
Input Third Order Intercept
(Two-tone input power = +30 dBm each tone)
0.02 - 0.1 GHz
0.1 - 2.0 GHz
0.1 - 3.0 GHz
0.1 - 4.0 GHz
42
62
61
60
dBm
dBm
dBm
dBm
Switching Characteristics
DC - 4.0 GHz
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
15
40
ns
ns
11
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
SWITCHES - SPDT - SMT
11 - 225
Insertion Loss vs. Temperature Isolation
Return Loss RF1 to RF2 Isolation
Insertion Loss vs. Vdd Isolation vs. Vdd
HMC784MS8GE
v00.0808
GaAs MMIC 10 WATT T/R SWITCH
DC - 4 GHz
-5
-4
-3
-2
-1
0
0123456
+25 C
+85 C
-40 C
INSERTION LOSS (dB)
FREQUENCY (GHz)
-5
-4
-3
-2
-1
0
0123456
+3V
+5V
+8V
INSERTION LOSS (dB)
FREQUENCY (GHz)
-50
-40
-30
-20
-10
0
0123456
RF1 ON RF2 OFF
RF1 OFF RF2 ON
ISOLATION (dB)
FREQUENCY (GHz)
-60
-50
-40
-30
-20
-10
0
0123456
INPUT RETURN LOSS
OUTPUT RETURN LOSS
RETURN LOSS (dB)
FREQUENCY (GHz)
-50
-40
-30
-20
-10
0
0123456
+3V
+5V
+8V
ISOLATION (dB)
FREQUENCY (GHz)
-50
-40
-30
-20
-10
0
0123456
RF1
RF2
ISOLATION (dB)
FREQUENCY (GHz)
11
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
SWITCHES - SPDT - SMT
11 - 226
Input P1dB vs. Vdd Input P0.1dB vs. Vdd
Input P1dB vs. Temperature @ Vdd = +5V
HMC784MS8GE
v00.0808
GaAs MMIC 10 WATT T/R SWITCH
DC - 4 GHz
Input IP3 vs. Tone Power @ Vdd = +5V Input IP3 vs. Tone Power @ Vdd = +8V
Input IP3 vs. Tone Power @ Vdd = +3V
20
30
40
50
60
70
01234
+30 dBm
+27 dBm
+20 dBm
IP3 (dBm)
FREQUENCY (GHz)
20
30
40
50
60
70
01234
+30 dBm
+27 dBm
+20 dBm
IP3 (dBm)
FREQUENCY (GHz)
20
30
40
50
60
70
01234
+30 dBm
+27 dBm
+20 dBm
IP3 (dBm)
FREQUENCY (GHz)
25
30
35
40
45
50
01234
+3V
+5V
+8V
P0.1dB (dBm)
FREQUENCY (GHz)
25
30
35
40
45
50
01234
+25 C
+85 C
-40 C
P1dB (dBm)
FREQUENCY (GHz)
25
30
35
40
45
50
01234
+3V
+5V
+8V
P1dB (dBm)
FREQUENCY (GHz)
11
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
SWITCHES - SPDT - SMT
11 - 227
Input IP3 vs. Temperature
27 dBm Tones, Vdd = +3V
Input IP3 vs. Temperature
27 dBm Tones, Vdd = +5V
Input IP3 vs. Temperature
27 dBm Tones, Vdd = +8V
HMC784MS8GE
v00.0808
GaAs MMIC 10 WATT T/R SWITCH
DC - 4 GHz
20
30
40
50
60
70
01234
+25 C
+85 C
-40 C
IP3 (dBm)
FREQUENCY (GHz)
20
30
40
50
60
70
01234
+25 C
+85 C
-40 C
IP3 (dBm)
FREQUENCY (GHz)
20
30
40
50
60
70
01234
+25 C
+85 C
-40 C
IP3 (dBm)
FREQUENCY (GHz)
Input P1dB vs. Vdd
Input P0.1dB vs. Vdd Input IP3 vs. Tone Power @ Vdd = +5V
20
30
40
50
60
70
0 0.05 0.1 0.15 0.2 0.2
5
+30 dBm
+27 dBm
+20 dBm
IP3 (dBm)
FREQUENCY (GHz)
25
30
35
40
45
50
0 0.05 0.1 0.15 0.2 0.2
5
+3V
+5V
+8V
P0.1dB (dBm)
FREQUENCY (GHz)
25
30
35
40
45
50
0 0.05 0.1 0.15 0.2 0.2
5
+3V
+5V
+8V
P1dB (dBm)
FREQUENCY (GHz)
11
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
SWITCHES - SPDT - SMT
11 - 228
Truth Table
Absolute Maximum Ratings
Control Input (Vctl) Signal Path State
A B RFC to RF1 RFC to RF2
High Low Off On
Low High On Off
RF Input Power (Vdd = +8V,
50 Ohm source & load impedances) +39 dBm (T = +85 °C)
Supply Voltage Range
(Vdd) (Vctl = 0V) -0.2 to +9V
Control Voltage Range (A & B) -0.2 to Vdd +0.5V
Channel Temperature 150 °C
Continuous Pdiss (T = 85 °C)
(derate 25 mW/°C above 85 °C) 1.217 W
Thermal Resistance
(Channel to ground paddle) 53.4 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
ESD Rating Class 1A HBM
Note: DC blocking capacitors are required at ports RFC,
RF1 and RF2. Their value will determine the lowest trans-
mission frequency.
Control Voltages & Currents
Bias Voltage & Current
Vdd (V) Typical Idd (μA)
+3 0.5
+5 2
+8 20
State Vdd = +3V
(μA)
Vdd = +5V
(μA)
Vdd = +8V
(μA)
Low (0 to +0.2V) 0.5 2 20
High (Vdd ±0.2V) 0.1 0.1 0.1
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
HMC784MS8GE
v00.0808
GaAs MMIC 10 WATT T/R SWITCH
DC - 4 GHz
11
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
SWITCHES - SPDT - SMT
11 - 229
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
Part Number Package Body Material Lead Finish MSL Rating Package Marking [1]
HMC784MS8GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] H784
XXXX
[1] 4-Digit lot number XXXX
[2] Max peak re ow temperature of 260 °C
Package Information
HMC784MS8GE
v00.0808
GaAs MMIC 10 WATT T/R SWITCH
DC - 4 GHz
11
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
SWITCHES - SPDT - SMT
11 - 230
Notes:
1. Set logic gate and switch Vdd = +3V to +8V and use HCT series logic to provide a TTL driver interface.
2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of +3 to +8 Volts applied to the CMOS
logic gates and to pin 4 of the RF switch.
3. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines lowest frequency
of operation.
4. Highest RF signal power capability is achieved with V set to +8V. The switch will operate properly (but at lower
RF power capability) at bias voltages down to +3V.
Typical Application Circuit
Pin Descriptions
Pin Number Function Description Interface Schematic
1 A See truth table and control voltage table.
2 B See truth table and control voltage table.
3, 5, 8 RFC, RF1, RF2 This pin is DC coupled and matched to 50 Ohms.
Blocking capacitors are required.
4Vdd Supply Voltage
6, 7 GND Package bottom must also
be connected to PCB RF ground.
HMC784MS8GE
v00.0808
GaAs MMIC 10 WATT T/R SWITCH
DC - 4 GHz
11
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
SWITCHES - SPDT - SMT
11 - 231
Evaluation Circuit Board
The circuit board used in the nal application
should be generated with proper RF circuit design
techniques. Signal lines at the RF port should have
50 ohm impedance and the package ground leads
and package bottom should be connected directly
to the ground plane similar to that shown above.
The evaluation circuit board shown above is avail-
able from Hittite Microwave Corporation upon
request.
Item Description
J1 - J3 PCB Mount SMA RF Connector
J4 - J7 DC Pin
C1 - C3 100 pF capacitor, 0402 Pkg.
C4 10 KpF capacitor, 0603 Pkg.
R1 - R3 100 Ohm Resistor, 0402 Pkg.
U1 HMC784MS8GE T/R Switch
PCB [2] 104122 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
List of Materials for Evaluation PCB 104124 [1]
HMC784MS8GE
v00.0808
GaAs MMIC 10 WATT T/R SWITCH
DC - 4 GHz
