VSMY294310SL
www.vishay.com Vishay Semiconductors
Rev. 1.0, 13-Oct-15 1Document Number: 84230
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Speed Infrared Emitting Diodes, 940 nm,
Surface Emitter Technology
DESCRIPTION
As part of the SurfLightTM portfolio, the VSMY294310SL is
an infrared, 940 nm, side looking emitting diode based on
GaAlAs surface emitter chip technology with extreme high
radiant intensities, high optical power and high speed,
molded in clear, untinted plastic packages (with lens) for
surface mounting (SMD).
APPLICATIONS
• Miniature light barrier
• Photointerrupters
• Optical switch
• Emitter source for proximity sensors
• IR illumination
• Remote control
FEATURES
• Package type: surface mount
• Package form: side view
• Dimensions (L x W x H in mm): 2.3 x 2.55 x 2.3
• Peak wavelength: p = 940 nm
• High reliability
• High radiant power
• Very high radiant intensity
• Angle of half intensity: = ± 25°
• Suitable for high pulse current operation
• Package matches with detector VEMD2xx3SLX01 and
VEMT2xx3SLX01 series
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
• Test conditions see table “Basic Characteristics“
Note
• MOQ: minimum order quantity
PRODUCT SUMMARY
COMPONENT Ie (mW/sr) (deg) P (nm) tr (ns)
VSMY294310SL 25 ± 25 940 10
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VSMY294310SL Tape and reel MOQ: 3000 pcs, 3000 pcs/reel Side view
VSMY294310SL
www.vishay.com Vishay Semiconductors
Rev. 1.0, 13-Oct-15 2Document Number: 84230
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR5V
Forward current IF70 mA
Surge forward current tp = 100 μs IFSM 1A
Power dissipation PV140 mW
Junction temperature Tj100 °C
Operating temperature range Tamb -40 to +85 °C
Storage temperature range Tstg -40 to +100 °C
Soldering temperature acc. figure 10, J-STD-020 Tsd 260 °C
Thermal resistance junction/ambient J-STD-051, soldered on PCB RthJA 250 K/W
0
20
40
60
80
100
120
140
0 20406080100
PV- Power Dissipation (mW)
Tamb - Ambient Temperature (°C)
RthJA = 250 K/W
0
10
20
30
40
50
60
70
80
0 20406080100
IF- Forward Current (mA)
Tamb - Ambient Temperature (°C)
RthJA = 250 K/W
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 70 mA, tp = 20 ms VF-1.52.0V
IF = 1 A, tp = 100 μs VF-2.5- V
Temperature coefficient of VFIF = 20 mA TKVF --1.7-mV/K
Reverse current IRnot designed for reverse operation μA
Junction capacitance VR = 0 V, f = 1 MHz, E = 0 mW/cm2CJ-5-pF
Radiant intensity IF = 70 mA, tp = 20 ms Ie12 25 45 mW/sr
IF = 1 A, tp = 100 μs Ie- 260 - mW/sr
Radiant power IF = 70 mA, tp = 20 ms e-40-mW
Temperature coefficient
of radiant power IF = 70 mA TKe- -0.2 - %/K
Angle of half intensity -± 25- deg
Peak wavelength IF = 20 mA p920 940 960 nm
Spectral bandwidth IF = 20 mA  -35-nm
Temperature coefficient of pIF = 20 mA TKp-0.25-nm/K
Rise time IF = 70 mA, 20 % to 80 % tr-10-ns
Fall time IF = 70 mA, 20 % to 80 % tf-10-ns
VSMY294310SL
www.vishay.com Vishay Semiconductors
Rev. 1.0, 13-Oct-15 3Document Number: 84230
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Forward Voltage vs. Ambient Temperature
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
Fig. 6 - Radiant Intensity vs. Forward Current
Fig. 7 - Relative Radiant Intensity vs. Ambient Temperature
Fig. 8 - Relative Radiant Intensity vs. Wavelength
VF - Forward Voltage (V)
IF - Forward Current (mA)
1
10
100
1000
1.0 1.2 1.4 1.6 1.8 2.0 2.8
tp = 100 µs
2.2 2.4 2.6
Tamb - Ambient Temperature (°C)
VF - Forward Voltage (V)
1.20
1.30
1.40
1.50
- 60 - 40 - 20 0 20 40 100
I
F
= 20 mA
60 80
1.25
1.35
1.45
Tamb - Ambient Temperature (°C)
VF, rel - Relative Forward Voltage (%)
90
95
105
115
- 60 - 40 - 20 0 20 40 100
I
F
= 20 mA
60 80
100
110
0.1
1
10
100
1000
1 10 100 1000
Ie - Radiant Intensity (mW/sr)
IF - Forward Current (mA)
tp = 100 μs
Tamb - Ambient Temperature (°C)
Ie, rel - Relative Radiant Intensity (%)
80
90
100
110
- 60 - 40 - 20 0 20 40 100
I
F
= 20 mA
60 80
95
105
85
λ - Wavelength (nm)
Ie, rel - Relative Radiant Intensity (%)
0
60
80
100
800 850 900 950 1000 1050
I
F
= 20 mA
70
90
50
20
40
30
10
VSMY294310SL
www.vishay.com Vishay Semiconductors
Rev. 1.0, 13-Oct-15 4Document Number: 84230
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
SOLDER PROFILE
Fig. 10 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 4 weeks
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 2a, acc. to J-STD-020
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
22688
Ie rel - Relative Radiant Intensity
ϕ - Angular Displacement
0.4 0.2 00.6
0° 10° 20°
0.9
0.8
30°
40°
50°
60°
70°
80°
0.7
1.0
0
50
100
150
200
250
300
0 50 100 150 200 250 300
Time (s)
Temperature (°C)
240 °C 245 °C
max. 260 °C
max. 120 s max. 100 s
217 °C
max. 30 s
max. ramp up 3 °C/s
max. ramp down 6 °C/s
19841
255 °C
VSMY294310SL
www.vishay.com Vishay Semiconductors
Rev. 1.0, 13-Oct-15 5Document Number: 84230
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters: VSMY294310SL
Drawing-No.: 6.544-5410.03-4
Issue: 3; 02.10.15
Solder pad proposal
acc. IPC 7351
4.2
1.2
0.9 0.9
center of pick
and place area
Ø 1.8
0.4
2.2
3.8
0.5
2.3
2.3
1.6
0.3
0.85
Anode
Cathode
2.55
2.22
0.9
0.05 ± 0.1
Exceeding cut residues or cut ins allowed
within the tolerance of the leads
Technical drawings
according to DIN
specications
Not indicated tolerances ± 0.2
VSMY294310SL
www.vishay.com Vishay Semiconductors
Rev. 1.0, 13-Oct-15 6Document Number: 84230
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TAPING AND REEL DIMENSIONS in millimeters: VSMY294310SL
12 + 0.3
- 0.1
II
I
1.75 ± 0.1
5.5 ± 0.05
2 ± 0.05
4 ± 0.1
Ø 1.55 ± 0.05
8 ± 0.1 2.85 ± 0.1
X (2 : 1)
Drawing-No.: 9.800-5123.01-4
Issue: 4; 02.10.15
Leader and trailer tape
Reel
Terminal position in tape
Parts mounted
Empty (400 mm min.)
Empty (160 mm min.)
Direction of pulling out
Unreel direction
Ø 62 ± 0.5
Ø 330 ± 1
2.5 ± 0.5
Label posted here
Tape position
coming out from reel
6000 pcs / reel
X
Ø 13 ± 0.5
12.4 ± 1.5
Technical drawings
according to DIN
specications
Lead I
Cathode
Collector
Anode
Lead II
Anode
Emitter
Cathode
Device
VSMB2943SLX01
VSMF2893SLX01
VSMB2948SL
VEMD2023SLX01
VEMD2523SLX01
VEMT2023SLX01
VEMT2523SLX01
VSMY2853SL
VSMY2943SL
VSMY294310SL
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 01-Jan-2021 1Document Number: 91000
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