SOLID STATE OL DEQ 3475081 0017932 4 I merentaemedes it O1E 17932 D 3875081 GE SOLID STATE _ _ T- 35-18 Signal Transistors 2N4400, 2N4401, 2N4402, 2N4403 Silicon Transistors The GE/RCA 2N4400, 2N4401 NPN types and 2N4402, amplifier applications. PNP values are negative; observe 2N4403 PNP types are planar epitaxial passivated silicon _ proper polarity. These types are supplied in JEDEC TO-92 transistors designed for general purpose switching and _ package. MAXIMUM RATINGS, Abso/ute-Maximum Values: 2N4400 2N4402 2N4401 2N4403 COLLECTOR TO EMITTER VOLTAGE (Vcgo} -40 v COLLECTOR TO BASE VOLTAGE (Vogo) --- 6-2 cence cence cee reneees -40 Vv EMITTER TO BASE VOLTAGE (Vegg) ++. - ee ce eee es eee ee eee ree tere - ' OV CONTINUOUS COLLECTOR CURRENT (Ic)... cer ete e cence teneere - 600 mA TOTAL POWER DISSIPATION (Ta < 25C)... eee cece cece cee err eet eee eee cnet ene e teeters 350 mW TOTAL POWER DISSIPATION (Tg < 25C) (P7) 1 1 w DERATE FACTOR Ta > 25C... ccc cence nnn cen rete etree teen eee net n eee nett ees 28 2.8 mWwiec DERATE FACTOR Tg > 25C...... 8 8 mWiec OPERATING TEMPERATURE (Ty) -55to +150 C STORAGE TEMPERATURE (Tg51@) -55 to +150 C LEAD TEMPERATURE, 1h6 + 1/32" (1 s8mm + 0.8mm) from case for 10s max. (TL)... . serene ence eee +230 C File Number 2058 36G E SOLID STATE Oo1 DE 3875081 0017933 0 7 3875081 G E SOLID STATE DIE 17933 D Signal Transistors 2N4400, 2N4401, 2N4402, 2N4403 T:35 -/5 ELECTRICAL CHARACTERISTICS, At Ambient Temperature (T,) = 25C Unless Otherwise Specified LIMITS CHARACTERISTICS SYMBOL 2N4400 2N4401 2N4402 2N4403 UNITS MIN. | MAX. | MIN. | MAX | MIN, | MAX. | MIN. | MAX Collector-Emitter Breakdown Voltage Vier)CEO ' (lg = TMA, Ig = 0) 40 - 40 - -40 - -40 - Collector-Base Breakdown Voltage (ig = 100A, Ie = 0) VipRICBO 60 - 60 - ~40 - -40 - Vv Emitter-Base Breakdown Voltage (lg = 100pA, Ig = 0) Viemeso | 6 - 6 - -5 | - | -] ~ Collector Cutoff Current og = 35), VeB(OFF) = 0.4V) Icey _ 100 = 100 - -100] - 100 nA Base Cutoff Current (Vog = 35V, Veporr = 0.4V) laev = _| 100 | - | 100 | - [| 100 | |{ 100 DC Forward Current Transfer Ratio (Voge = Vio = 0.1mA) - - 20 - - - 30 - - (cE = 1Vig = imA) 20 - 40 - 30 - 60 - - Wee = 1V, Iq = 10mA) hee 40 - 80 _ 50 - 100 = - (Woe = 2V,I = 150mA)* 50 150 100 300 50 150 100 300 - (VoE = 2V, Ig = 500mA)* 20 - 30 - 20 - 20 = = Small-Signa! Forward Current Transfer Ratio (Voe = 10V, lg = 1mA, f = 1 kHz) Ne 20 250 40 500 30 250 60 500 - Collector-Emitter Saturation Voltage (Ig = 150mA, lp = 15mA)* VoE(saT) = 0.4 = 0.4 = -0.4 = -0.4 (Ig = 500mA, fg = S0mA)* : - 0.75 - 0.75 - -0.76| ~0.75 Vv Base Emitter Saturation Voltage (ig = 150mMA, Ig = 15mA)* Vee(SaT) [0.75 | 0.95 | 0.75 | 0.95 | | -04] | -04 (Ig = 500MA, Ip = 50MA)* _ 1.2 - 1.2 _|[-0.75| |-0.75 Collector-Base Capacitance (op = 5V, Ie = 0, f = 1 MHz) Cop - 6.5 - 6.5 - ~ - - (Veg = 10V, Ie = 0,1 = 1 MHz) - - - - - 85 - 8.5 pF Emitter-Base Capacitance (Ve = 9.5V, Io = 0, f = 1 MHz) Cop - 30 - 30 - 30 30 Gain Bandwidth Product Voe = 10V, le = 20mA, f = 100 MHz) fy - 200 - 250 150 - 200 - MHz Input Impedance Woe = 1mA, Voge = 10V,f = 1 kHz) hig 0.5 0.75 1 15 750 7.5 1.5 15 kQ Voltage Feedback Ratio L Wce = i mA, Voce = 10V,{ = 1 kHz) he 0.1 8 0.1 8 0.1 8 0.4 8 x 10-4 Output Admittance Woe = 1mA, Vog = 10V, f = 1 kHz) Roe 4 30 1 30 1 100 1 100 | mhos Delay Time ty - is - 15 - 15 - 16 Rise Time (ig = 150 mA, Igy = 15MA WVoe = 30, VeBiOFF) = 2V) t - 20 =- 20 - 20 = 20 ns Storage Time ty - 225 - 225 ~ 225 - 225 Fall Time (Igq = Igg = 15 mA) Voce = 30 V, Io = 150 mA) t - 30 - 30 - 30 - 30 *Pulse Conditions: Pulse width < 300ysec, Duty Cycle < 2%. 37G E SOLID STATE 3875081 GE SOLID STATE o1 Te 3875081 OOL7d3s4 e I DIE 17934 D Signal Transistors .T' 3845 2N4400, 2N4401, 2N4402, 2N4403 1 2 Q B x = a wo a z ef Fr 9 6 a N = e z 4 2 46 2 68 100 9208-42786 Fig. 1Normalized de forward current transter ratio characteristics for 2N4400 and 2N4401, of 1 10 COLLECTOR CURRENT (ic) - mA Ss ~ ay 2 5 >, gS io -O4 -1 ~10 BASE CURRENT (Ip)-MA Fig. 3Typicalcollector-to-emitter saturation voltage char 2N4400 and 2N4401. a BASE-TO-EMITTER SATURATION VOLTAGE (VBERal) BASE-TO-EMITTER ON VOLTAGE (Vpgon) i COLLEGTOR-TO-EMITTER SATURATION VOLTAGE 7 > & 0.8} _(cEsat) | [ 1 . 235C 3 AMBIENT T xrpne ap eel Lt en 2 ita oy i os vest Sv weeon @ VCE goF i 04 } _. st 5 02 LI > 14 Yortat @ tong = 79 Tr 2 4 6al" 2 r o4 1 10 100 COLLECTOR CURRENT (Ic) - mA e2s-42789 Fig. 5 Typical Vz.*', Vo, and V,-' voltage characteristics for all types. (PNP voltage and current values are negative) 38 NT TRANSFER AATIO (hee) o wu 4 cz > 3 Q = = z= 2 9 a oa w N Z = = 5 2 - 0.4 4 -10 ~100 COLLECTOR CURRENT (I}-mA 928~42785 Fig. 2 Normalized de forward current transfer ratio characteristics for 2N4402 and 2N4403, VOLTAGE (Vcesat)-V 2 > o COLLECTOR-TO-EMITTER 2 i o1 1 0 BASE CURRENT (Ip)- mA 92c8-42784 Fig. 4 Typical colfector-to-emitter saturation voltage characteristics 2N4402 and 2N4403, TEMPERATURE COEFFICIENT - mV/"C 1 1 J = 100 COLLECTOR CURRENT (Ic) - mA 92C3 42708 Fig. 6 Typical temperature coefficient characteristics for all types. (PNP voltage and current values are negative) 0G E SOLID STATE 3875081 GE SOLID STATE O1 DE 3875081 0017935 4 T DIE 17935 D sv fx 170 100 40 DUTY CYCLE = 2% 1k | 4 t Cg <10 pF } 9208-42782 SCOPE RISE TIME <4 ne. Signal Transistors 2N4400, 2N4401, 2N4402, 2N4403 T 35-15 +30V 1TO 100 ja DUTY CYCLE = 2% +16 v| -14V be < 20m 9268-42703 g = TOTAL SHUNT CAPACITANCE OF TEST JIGS, CONNECTORS AND OSCILLOSCOPE. Fig. 7*Turn-an" switching time waveform and test circuit for 2N4400 1d 2N4401, and 2. <ane wv -6V | fe DUTY CYCLE = 2% 4 92C-42 790 SCOPE RISE TIME < 4 ns, Fig. 8*Turn-off' switching time waveform and test circult for 2N4400 and 2N4401, -0V 2000 <20ne Hay (Vin = -90.V) 1 I a -18 | cg <10pF | |a_1 70100: DUTY CYCLE - 2% w2cs-42791 Cg = TOTAL SHUNT CAPACITANCE OF TEST JIG CONNECTORS AND OSCILLOSCOPE. Fig. 9"Turn-on* switching time waveform and test circuit for 2N4402 and 2N4403, Fig, 10Turn-off switching time waveform and test circult for 2N4402 and 2N4403, TERMINAL CONNECTIONS Lead 1 - Emitter Lead 2 - Base Lead 3 - Collector 39 toma cates mE,