SST/U401NL Series
Vishay Siliconix
New Product
Document Number: 72055
S-22448—Rev. A, 17-Feb-03 www.vishay.com
7-1
Monolithic N-Channel JFET Duals
SST404NL
SST406NL U401NL
U404NL U406NL
PRODUCT SUMMARY
Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) VGS1 - VGS2 Max (mV)
U401NL -0.5 to -2.5 -40 1-2 5
SST/U404NL -0.5 to -2.5 -40 1-2 15
SST/U406NL -0.5 to -2.5 -40 1-2 40
FEATURES BENEFITS APPLICATIONS
DAnti Latchup Capability
DMonolithic Design
DHigh Slew Rate
DLow Offset/Drift Voltage
DLow Gate Leakage: 2 pA
DLow Noise
DHigh CMRR: 102 dB
DExternal Substrate Bias—Avoids Latchup
DTight Differential Match vs. Current
DImproved Op Amp Speed, Settling Time Accuracy
DMinimum Input Error/Trimming Requirement
DInsignificant Signal Loss/Error Voltage
DHigh System Sensitivity
DMinimum Error with Large Input Signal
DWideband Differential Amps
DHigh-Speed,Temp-Compensated,
Single-Ended Input Amps
DHigh-Speed Comparators
DImpedance Converters
DESCRIPTION
The SST/U401NL series of high-performance monolithic dual
JFETs features extremely low noise, tight offset voltage and
low drift over temperature specifications, and is targeted for
use in a wide range of precision instrumentation applications.
This series has a wide selection of offset and drift
specifications with the U401NL featuring a 5-mV offset and
10-mV/_C drift.
Pins 4 and 8 of the SST series, and pin 4 of the U series part
numbers enable the substrate to be connected to a positive
polarity, external bias (VDD) to avoid latchup.
The U series, hermetically sealed TO-78 package is
available w ith full m ilitary processing. The SS T series SO-8
package provides ease of manufacturing, and the
symmetrical p inout prevents im proper orientation. T he SO-8
package is available with tape-and-reel options for
compatibility with automatic assembly methods.
TO-78
Top View
U401NL
U404NL
U406NL
G1
S1
D1
G2
D2
S2
1
2
3
7
6
4
S1SUBSTRATE
D1G2
G1D2
SUBSTRATE S2
Narrow Body SOIC
5
6
7
8
2
3
4
1
Top View
Marking Codes:
SST404NL - 404NL
SST406NL - 406NL
5
CASE, SUBSTRATE
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage -40 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current 10 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 sec.) 300_C. . . . . . . . . . . . . . . . . . .
Storage Temperature : U Prefix -65 to 200_C. . . . . . . . . . . . . . . . . . . . .
SST Prefix -55 to 150_C. . . . . . . . . . . . . . . . . . .
Operating Junction Temperature -55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation : Per Sidea300 mW. . . . . . . . . . . . . . . . . . . . . . . .
Totalb500 mW. . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a. Derate 2.4 mW/_C above 25_C
b. Derate 4 mW/_C above 25_C
For applications information see AN106.
SST/U401NL Series
Vishay Siliconix New Product
www.vishay.com
7-2 Document Number: 72055
S-22448—Rev. A, 17-Feb-03
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
U401NL SST/U404NL SST/U406NL
Parameter Symbol Test Conditions TypaMin Max Min Max Min Max Unit
Static
Gate-Source V(BR)GSS IG = -1 mA, VDS = 0 V -58 -40 -40 -40
Gate-Source
Breakdown Voltage V(BR)G1 - G2 IG = "1 mA, VDS = 0 V, VGS = 0 V "45 "30 "30 "30 V
Gate-Source
Cutoff Voltage VGS(off) VDS = 15 V, ID = 1 nA -1.5 -0.5 -2.5 -0.5 -2.5 -0.5 -2.5
V
Saturation
Drain CurrentbIDSS VDS = 10 V, VGS = 0 V 3.5 0.5 10 0.5 10 0.5 10 mA
Gate Reverse Current
IGSS
VGS = -30 V, VDS = 0 V -2 -25 -25 -25 pA
Gate Reverse Current IGSS TA = 125_C-1 nA
Gate Operating
IG
VDG = 15 V, ID = 200 mA-2 -15 -15 -15 pA
Gate Operating
Current IGTA = 125_C-0.8 -10 -10 -10 nA
Drain-Source
On-Resistance rDS(on) VGS = 0 V, ID = 0.1 mA 250 W
Gate-Source Voltage VGS VDG = 15 V, ID = 200 mA-1 -2.3 -2.3 -2.3
Gate-Source
Forward Voltage VGS(F) IG = 1 mA , VDS = 0 V 0.7 V
Dynamic
Common-Source
Forward
Transconductance gfs VDS = 15 V, ID = 200 mA
f = 1 kHz
1.5 1 2 1 2 1 2 mS
Common-Source
Output Conductance gos
f = 1 kHz 1.3 2 2 2 mS
Common-Source
Forward
Transconductance gfs VDS = 10 V, VGS = 0 V
f = 1 kHz
4 2 7 2 7 2 7 mS
Common-Source
Output Conductance gos
f = 1 kHz 5 30 30 30 mS
Common-Source
Input Capacitance Ciss
VDS = 15 V ID = 200 mA
4 8 8 8
Common-Source
Reverse Transfer
Capacitance Crss
VDS = 15 V, ID = 200 mA
f = 1 MHz 1.5 3 3 3 pF
Equivalent Input
Noise Voltage enVDS = 15 V, ID = 200 mA
f = 10 Hz (U Only) 10 20 20 20 nV⁄
√Hz
Matching
Differential
Gate-Source Voltage |VGS1 –V
GS2|VDG = 10 V, ID = 200 mA5 15 40 mV
Gate
-
Source Voltage
D|V V |
VDG
=
10 V
SST404NL 20
Gate
-
So
u
rce Voltage
Differential Change
with Temperature
D
|
VGS1 –V
GS2
|
DT
V
DG
=
10 V
ID = 200 mA
T 55 to 125_C
SST406NL 40 mV/_C
g
with Temperature
DT
Dm
TA = -55 to 125_CAll U 10 25 80
m
Common Mode
Rejection Ratio CMRR VDG = 10 to 20 V, ID = 200 mA102 95 95 dB
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NNR
b. Pulse test: PW v300 ms duty cycle v3%.
SST/U401NL Series
Vishay Siliconix
New Product
Document Number: 72055
S-22448—Rev. A, 17-Feb-03 www.vishay.com
7-3
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
-0.2 V
-0.4 V
-0.6 V
-0.8 V
-1.0 V
-1.2 V
-1.4 V
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
VGS(off) - Gate-Source Cutoff Voltage (V)
10
0 -2.5-2.0-1.5-1.0-0.5
8
6
4
0
8.0
6.4
4.8
3.2
0
2 1.6
IDSS @ VDS = 15 V, VGS = 0 V
gfs @ VDG = 15 V, VGS = 0 V
f = 1 kHz
gfs
IDSS
Gate Leakage Current
VDG - Drain-Gate Voltage (V)
050
0.1 pA
10 pA
1 pA
IGSS @ 125_C
IGSS @ 25_C
TA = 125_C
TA = 25_C
IG @ ID = 500 mA
10 20 30 40
100 pA
1 nA
10 nA
100 nA
Output Characteristics Output Characteristics
VDS - Drain-Source V oltage (V) VDS - Drain-Source Voltage (V)
4
0168420
3.2
2.4
1.6
0.8
0
7
0168420
6
5
2
1
0
VGS = 0 V
-0.2 V
-0.4 V
-0.6 V
-0.8 V
-1.0 V
VGS = 0 V
-0.2 V
-0.4 V
-0.6 V
-0.8 V
-1.0 V
-1.2 V
12 12
3
4
VGS(off) = -1.5 V VGS(off) = -2 V
Output CharacteristicsOutput Characteristics
VDS - Drain-Source V oltage (V) VDS - Drain-Source Voltage (V)
3
010.80.60.40.2
2.4
1.8
1.2
0
0.6
VGS(off) = -1.5 V VGS = 0 V
-0.2 V
-0.4 V
-0.6 V
-0.8 V
-1.0 V
4
010.80.60.40.2
3.2
2.4
1.6
0
0.8
VGS = 0 V
VGS(off) = -2 V
-1.2 V
-1.2 V
50 mA
50 mA
gfs - Forward Transconductance (mS)
IDSS - Saturation Drain Current (mA)
ID - Drain Current (mA)
ID - Drain Current (mA)
ID - Drain Current (mA)
ID - Drain Current (mA)
IG - Gate Leakage
SST/U401NL Series
Vishay Siliconix New Product
www.vishay.com
7-4 Document Number: 72055
S-22448—Rev. A, 17-Feb-03
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Circuit Voltage Gain vs. Drain Current
AV- Voltage Gain
ID - Drain Current (mA)
0.1 10.01
150
120
90
60
30
0
VGS(off) = -1.5 V
-2.0 V
On-Resistance vs. Drain Current
ID - Drain Current (mA)
0.01 0.1 1
500
400
300
200
100
0
VGS(off) = -1.0 V
-1.5 V
-2.0 V
Transfer Characteristics Gate-Source Differential Voltage
vs. Drain Current
Voltage Differential with Temperature
vs. Drain Current Common Mode Rejection Ratio
vs. Drain Current
(mV)
VGS1 VGS2
-
CMRR (dB)
VGS - Gate-Source Voltage (V) ID - Drain Current (mA)
ID - Drain Current (mA) ID - Drain Current (mA)
0.01 0.1 1
100
10
1
5
0 -1.2-0.8-0.4 -1.6 -2
4
3
2
1
0
SST/U404NL
0.01 0.1 1
130
120
80
110
100
90
0.01 0.1 1
100
10
1
TA = -55_C
125_C
VGS(off) = -1.5V
VDG = 15 V
DTA = 25 to 125_C
DTA = -55 to 25_C
VDG = 15 V
5 - 10 V
U401NL
SST/U404NL
U401NL
AV+
gfs RL
1)RLgos
Assume VDD = 15 V, VDS = 5 V
RL+10 V
ID
VDS = 15 V
25_C
V/ _C
()
t
D
Dm
VGS1 VGS2
-
VGS1 VGS2
-
DVDG
CMRR = 20 log D
DVDG = 10 - 20 V
rDS(on) - Drain-Source On-Resistance ( Ω )
ID - Drain Current (mA)
SST/U401NL Series
Vishay Siliconix
New Product
Document Number: 72055
S-22448—Rev. A, 17-Feb-03 www.vishay.com
7-5
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
10 100 1 k 100 k10 k
0 -12 -16 -20-8-4
Common-Source Input Capacitance
vs. Gate-Source Voltage Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
Equivalent Input Noise Voltage vs. Frequency
- Input Capacitance (pF)Ciss
- Reverse Feedback Capacitance (pF)Crss
VGS - Gate-Source Voltage (V) VGS - Gate-Source Voltage (V)
f - Frequency (Hz)
10
0 -12 -16 -20-8-4
8
6
4
2
0
20
16
12
8
4
0
15 V
f = 1 MHz
VDS = 0 V
15 V
VDG = 15 V
VGS = 0 V
ID @ 200 mA
Output Conductance vs. Drain Current
ID - Drain Current (mA)
5
4
3
2
1
00.01 0.1 1
VGS(off) = -1.5 V
TA = -55_C
125_C
f = 1 MHz
10
8
6
4
2
0
Common-Source Forward Transconductance
vs. Drain Current
ID - Drain Current (mA)
0.01 0.1 1
4.0
3.2
2.4
1.6
0.8
0
TA = -55_C
125_C
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
VGS(off) - Gate-Source Cutoff Voltage (V)
500
0 -1.5 -2.5-2.0-1.0-0.5
400
200
100
0
30
24
18
6
0
rDS
gos
300
12
rDS @ ID = 100 mA
VGS = 0 V
gos @ VDG = 15 V
VGS = 0 V
f = 1 kHz
5 V
VDS = 0 V
5 V
25_C
25_C
VDS = 15 V
f = 1 kHz
VGS(off) = -1.5 V VDS = 15 V
f = 1 kHz
S)gos - Output Conductance (m
en - Noise Voltage nV / Hz
gfs - Forward Transconductance (mS)
rDS(on) - Drain-Source On-Resistance ( Ω )
gos - Output Conductance (µS)
