370A
INVERTER GRADE THYRISTORS Hockey Puk Version
ST183C..C SERIES
Bulletin I25178 rev. B 04/00
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
Features
Metal case with ceramic insulator
International standard case TO-200AB (A-PUK)
All diffused design
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance
case style TO-200AB (A-PUK)
IT(AV) 370 A
@ Ths 55 °C
IT(RMS) 690 A
@ Ths 25 °C
ITSM @ 50Hz 4900 A
@ 60Hz 5130 A
I2t@
50Hz 120 KA2s
@ 60Hz 110 KA2s
VDRM/VRRM 400 to 800 V
tq range 10 to 20 µs
TJ- 40 to 125 °C
Parameters ST183C..C Units
Major Ratings and Characteristics
Document Number: 93668
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1
ST183C..C Series
Bulletin I25178 rev. B 04/00
ST183C..C 40
Voltage VDRM/VRRM, maximum VRSM , maximum IDRM/IRRM max.
Type number Code repetitive peak voltage non-repetitive peak voltage @ TJ = TJ max.
VVmA
04 400 500
08 800 900
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Frequency Units
50Hz 770 660 1220 1160 5450 4960
400Hz 730 600 1270 1090 2760 2420
1000Hz 600 490 1210 1040 1600 1370 A
2500Hz 350 270 860 730 800 680
Recovery voltage Vr 50 50 50 50 50 50
Voltage before turn-on Vd VDRM VDRM V DRM
Rise of on-state current di/dt 50 50 - - - - A/µs
Heatsink temperature 40 55 40 55 40 55 °C
Equivalent values for RC circuit 47Ω / 0.22µF 47Ω / 0.22µF 47Ω / 0.22µF
ITM
180oel
180oel 100µs
ITM ITM
Current Carrying Capability
V
IT(AV) Max. average on-state current 370 (130) A 180° conduction, half sine wave
@ Heatsink temperature 55 (85) °C double side (single side) cooled
IT(RMS) Max. RMS on-state current 690 DC@ 25°C heatsink temperature double side cooled
ITSM Max. peak, one half cycle, 4900 t = 10ms No voltage
non-repetitive surge current 5130 A t = 8.3ms reapplied
4120 t = 10ms 100% VRRM
4310 t = 8.3ms reapplied Sinusoidal half wave,
I2t Maximum I2t for fusing 120 t = 10ms No voltage Initial TJ = TJ max
110 t = 8.3ms reapplied
85 t = 10ms 100% VRRM
78 t = 8.3ms reapplied
I2√t Maximum I2√t for fusing 1200 KA2√s t = 0.1 to 10ms, no voltage reapplied
Parameter ST183C..C Units Conditions
On-state Conduction
KA2s
Document Number: 93668
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2
ST183C..C Series
Bulletin I25178 rev. B 04/00
VTM Max. peak on-state voltage 1.80 ITM= 600A, TJ = TJ max, tp = 10ms sine wave pulse
VT(TO)1 Low level value of threshold
voltage
VT(TO)2 High level value of threshold
voltage
rt1Low level value of forward
slope resistance
rt2High level value of forward
slope resistance
IHMaximum holding current 600 TJ = 25°C, IT > 30A
ILTypical latching current 1000 TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A
Parameter ST183C..C Units Conditions
On-state Conduction
1.40 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
1.45 (I > π x IT(AV)), TJ = TJ max.
V
0.67 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
0.58 (I > π x IT(AV)), T J = TJ max.
mΩ
mA
di/dt Max. non-repetitive rate of rise TJ = TJ max, VDRM = rated VDRM
of turned-on current ITM = 2 x di/dt
TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, tp= 1µs
Resistive load, Gate pulse: 10V, 5Ω source
TJ = TJ max, ITM = 300A, commutating di/dt = 20A/µs
VR = 50V, tp = 500µs, dv/dt: see table in device code
Switching
Parameter ST183C..C Units Conditions
1000 A/µs
tdTypical delay time 1.1
Min Max
dv/dt Maximum critical rate of rise of TJ = TJ max. linear to 80% VDRM, higher value
off-state voltage available on request
IRRM Max. peak reverse and off-state
IDRM leakage current
Parameter ST183C..C Units Conditions
Blocking
500 V/µs
40 mA TJ = TJ max, rated VDRM/VRRM applied
PGM Maximum peak gate power 60
PG(AV) Maximum average gate power 10
IGM Max. peak positive gate current 10 A TJ = TJ max, tp ≤ 5ms
+VGM Maximum peak positive
gate voltage
-VGM Maximum peak negative
gate voltage
IGT Max. DC gate current required
to trigger
VGT Max. DC gate voltage required
to trigger
IGD Max. DC gate current not to trigger 20 mA
VGD Max. DC gate voltage not to trigger 0.25 V
Triggering
Parameter ST183C..C Units Conditions
20
5
VT
J = TJ max, tp ≤ 5ms
200 mA
3V
TJ = 25°C, VA = 12V, Ra = 6Ω
TJ = TJ max, rated VDRM applied
tqMax. turn-off time 10 20
µs
WT
J = TJ max, f = 50Hz, d% = 50
Document Number: 93668
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3
ST183C..C Series
Bulletin I25178 rev. B 04/00
TJMax. operating temperature range -40 to 125
Tstg Max. storage temperature range -40 to 150
RthJ-hs Max. thermal resistance, 0.17 DC operation single side cooled
junction to heatsink 0.08 DC operation double side cooled
RthC-hs Max. thermal resistance, 0.033 DC operation single side cooled
case to heatsink 0.017 DC operation double side cooled
F Mounting force, ± 10% 4900 N
(500) (Kg)
wt Approximate weight 50 g
Parameter ST183C..C Units Conditions
K/W
Thermal and Mechanical Specification
°C
Case style TO - 200AB (A-PUK) See Outline Table
K/W
Single Side Double Side Single Side Double Side
180°0.015 0.016 0.011 0.011
120°0.018 0.019 0.019 0.019
90°0.024 0.024 0.026 0.026 K/W TJ = TJ max.
60°0.035 0.035 0.036 0.037
30°0.060 0.060 0.060 0.061
Sinusoidal conduction Rectangular conduction
Conduction angle Units Conditions
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Ordering Information Table
5689
ST 18 3 C 08 C H K 1
34 10
7
Device Code
12
dv/dt - tq combinations available
dv/dt (V/µs) 20 50 100 200 400
10 CN DN EN FN* HN
12 CM DM EM FM HM
15 CL DL EL FL* HL
18 CP DP EP FP HP
20 CK DK EK FK HK
tq(µs)
*Standard part number.
All other types available only on request.
1- Thyristor2- Essential part number3- 3 = Fast turn off4- C = Ceramic Puk5- Voltage code: Code x 100 = V
RRM (See Voltage Rating Table)6- C = Puk Case TO-200AB (A-PUK)7- Reapplied dv/dt code (for t
q test condition)8-t
q code9- 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads)
1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads)
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)
3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads)
- Critical dv/dt:
None = 500V/µsec (Standard value)
L = 1000V/µsec (Special selection)
10
Document Number: 93668
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4
ST183C..C Series
Bulletin I25178 rev. B 04/00
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
40
50
60
70
80
90
100
110
120
130
0 40 80 120 160 200 240
30° 60° 90° 120°
180°
Average On-state Current (A)
Conduction Angle
Maximum Allowable Heatsink Temperature (°C)
ST183C..C Series
(Single Side Cooled)
R (DC) = 0.17 K/W
thJ-h s
20
30
40
50
60
70
80
90
100
110
120
130
0 50 100 150 200 250 300 350 400
DC
30°
60°
90°
120°
180°
A ve ra ge O n -state Curre nt (A)
Conduction Period
M axim um Allowable Heatsink Tem perature (°C)
ST183C ..C Series
( S in g le S id e C o o le d )
R (D C ) = 0.17 K/W
th J- hs
Case Style TO-200AB (A-PUK)
All dimensions in millimeters (inches)
Outline Table
DIA. MAX.
4.75 (0.19)
28 (1.10)
6.5 (0.26)
19 (0.75)
0.3 (0.01) MIN.
0.3 (0.01) MIN.
13.7 / 14.4
(0.54 / 0.57)
25°± 5°
GATE TERM. FOR
1.47 (0.06) DIA.
PIN RECEPTACLE
ANODE TO GATE
CREEPAGE DISTANCE: 7.62 (0.30) MIN.
STRIKE DISTANCE: 7.12 (0.28) MIN.
19 (0.75)
DIA. MAX.
38 (1.50) DIA MAX.
2 HOLES 3.56 (0.14) x
1.83 (0.07) MIN. DEEP
42 (1.65) MAX.
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
Document Number: 93668
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5
ST183C..C Series
Bulletin I25178 rev. B 04/00
Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics
Fig. 5 - On-state Power Loss Characteristics Fig. 6 - On-state Power Loss Characteristics
Fig. 7 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
20
30
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600 700
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Conduction Period
Maximum Allowable Heatsink Temperature (°C)
ST183C ..C Series
(D ouble Side C o oled)
R (D C ) = 0 .08 K/W
th J-hs
30
40
50
60
70
80
90
100
110
120
130
0 50 100 150 200 250 300 350 400 450
30°
60°
90°
120°
180°
Average On-state Current (A)
Conduction Angle
Maxim um Allowable Heatsink Tem pera ture (°C)
ST18 3C ..C Series
(Double Side Cooled)
R (D C) = 0.0 8 K/W
thJ-hs
0
200
400
600
800
1000
1200
1400
0 100 200 300 400 500 600 700
DC
180°
120°
90°
60°
30°
RMS Limit
Condu ction Period
Maximum Average On-state Power Loss (W)
Averag e On-state Curren t (A)
ST183C..C Series
T = 125°C
J
0
100
200
300
400
500
600
700
800
900
1000
0 50 100 150 200 250 300 350 400 450
180°
120°
90°
60°
30°
RMS Lim it
Conduction Angle
Maximum Average O n-state Pow er Loss (W )
A verag e O n -state Curre nt (A )
ST183C ..C Series
T = 125°C
J
2000
2500
3000
3500
4000
4500
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
In itia l T = 125 °C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
ST183C..C Series
At An y Rated L oad Con dition And W ith
Rated V Applied Following Surge.
RRM
2000
2500
3000
3500
4000
4500
5000
0.01 0.1 1
P u lse T ra in D u r a ti o n ( s)
Ve rsus P ulse Tra in D ura tion. Co ntro l
Of C on duction M ay Not Be M aintain ed.
Peak Half Sine Wave On-state Current (A)
In it ia l T = 1 2 5 °C
No V olta g e Re a p p lied
Rate d V Reapp lied
RRM
J
ST1 83C ..C Serie s
M ax im um N on Re petitive S urg e Curre n t
Document Number: 93668
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6
ST183C..C Series
Bulletin I25178 rev. B 04/00
Fig. 9 - On-state Voltage Drop Characteristics Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Recovery Current Characteristics
Fig. 13 - Frequency Characteristics
100
1000
10000
11.522.533.544.5
T = 25°C
J
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
T = 125°C
J
ST183C..C Series
0
20
40
60
80
100
120
140
160
0 102030405060708090100
Maximum Reverse Recovery Current - Irr (A)
Rate Of Fall Of Forward Current - di/dt (A/µs)
I = 500 A
300 A
200 A
100 A
50 A
ST183C..C Series
T = 125 °C
J
TM
0
50
100
150
200
250
0 102030405060708090100
I = 50 0 A
300 A
200 A
100 A
50 A
Rate Of Fall Of On-state Current - di/dt (A/µs)
Maximum Reverse Recovery Charge - Qrr (µC)
ST183C..C Series
T = 125 °C
J
TM
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10
Squa re W a v e Pulse D ura tio n (s)
th J -h s
Transien t Therm a l Im p ed anc e Z (K/W)
ST 183C ..C Series
Steady State Value
R = 0.17 K/W
( S in g l e S id e C o o l e d )
R = 0.08 K/W
(D ouble Side Cooled)
(D C O peratio n)
th J-hs
th J-hs
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
Pulse B ase w idth (µs)
1000
1500
3000
200
500
5000
ST183C..C Series
Sinusoidal pulse
T = 55°C
C
Snub ber circuit
R = 47 oh m s
C = 0.22 µF
V = 80% V
s
s
DDRM
10000
tp
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
Pulse Basewidth (µs)
Pe a k O n -s tate C urre nt (A )
1000
1500
3000
200
500
5000
Snubber circuit
R = 47 ohm s
C = 0 .22 µ F
V = 80% V
s
s
DDRM
ST183C..C Series
Sinu s o id a l p u lse
T = 40°C
C
tp
1E4
10000
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ST183C..C Series
Bulletin I25178 rev. B 04/00
Fig. 14 - Frequency Characteristics
Fig. 15 - Frequency Characteristics
Fig. 16 - Maximum On-state Energy Power Loss Characteristics
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
1000
1500
3000
200
500
Pulse B ase w idth (µs)
Peak On -state C urrent (A)
Snu b be r c i rc uit
R = 47 ohm s
C = 0 .22 µF
V = 8 0% V
s
s
DDRM
ST183C ..C Series
Trapezoidal pulse
T = 40°C
di/dt = 100A/µs
C
5000
tp
10000
1E4
1E2
1E3
1E4
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
1000
1500
3000
200
500
Pulse Basew idth (µs)
P eak O n-state Curren t (A)
ST183C ..C Se ries
Trapezoidal pulse
T = 40°C
di/dt = 50A/µs
C
Snubber circuit
R = 47 o hm s
C = 0 .22 µF
V = 8 0% V
s
s
DDRM
5000 tp
1E4
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
Pulse B asew idth (µs)
1000
1500
200
500
ST183C..C Series
Tra p ezo id a l pu lse
T = 55°C
di/dt = 10 0A/µs
C
3000
Snub ber circuit
R = 47 o hm s
C = 0.22 µF
V = 80% V
s
s
DDRM
tp
5000
10000
1E1
1E1 1E2 1E3 1E4
50 H z
400
2500
100
Pulse Basew idth (µs)
1000
1500
200
500
ST183C..C Series
Trap e zoida l puls e
T = 55°C
di/dt = 50A/µs
C
Snubber circuit
R = 47 ohm s
C = 0 .22 µF
V = 80 % V
s
s
DDRM
3000
tp
5000
1E1
1E1 1E2 1E3 1E4
Pulse Base w idth (µs)
20 joules per pulse
2
1
0.5
0.3
0.2
0.1
10
4
ST183C..C Se ries
Rectangular pulse
di/dt = 50A/µs
tp
1E1
1E1
1E2
1E3
1E4
1E5
1E1 1E 2 1 E3 1E4
Pulse Basew id th (µs)
20 joules per pulse
2
1
0.5
0.3
0.2
0.1
10
Peak O n-state Curren t (A)
ST1 83C ..C Series
Sinus oida l p uls e
4
tp
1E4
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ST183C..C Series
Bulletin I25178 rev. B 04/00
Fig. 17 - Gate Characteristics
0.1
1
10
100
0.0 01 0.0 1 0.1 1 1 0 1 00
VGD
IG D
(b)
(a )
Tj=25 °C
Tj=1 25 °C
Tj=-40 °C
(1) (2)
Instantaneous G a te Curren t (A)
Instanta neous G ate V oltage (V )
Re c tan g ula r gate pulse
a) Recomm ended load line for
b ) R e c o m m e n d e d lo a d li n e fo r
<=30% rated di/dt : 10V, 10ohm s
rated di/dt : 20V, 10ohm s; tr<=1 µs
tr<=1 µs
(1) PG M = 10W, tp = 20m s
(2) PG M = 20W, tp = 10m s
(3) PG M = 40 W , tp = 5m s
(4) PG M = 60W, tp = 3.3ms
(3)
Device: ST183C ..C Series Fre quenc y Limited by PG (A V )
(4)
Document Number: 93668
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Legal Disclaimer Notice
Vishay
Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier®, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN®
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
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