1
SEMICONDUCTORS
ZXM61P03F
ISSUE 1 - OCTOBER 2005
30V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS=-30V; RDS(ON)=0.35⍀; ID=-1.1A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
•Low on-resistance
•Fast switching speed
•Low threshold
•Low gate drive
•SOT23 package
APPLICATIONS
•DC - DC converters
•Power management functions
•Disconnect switches
•Motor control
ORDERING INFORMATION
DEVICE REEL SIZE
(inches)
TAPE WIDTH
(mm)
QUANTITY
PER REEL
ZXM61P03FTA 7 8 embossed 3,000
ZXM61P03FTC 13 8 embossed 10,000
DEVICE MARKING
P03
SOT23
Pin out
Top view
ZXM61P03F
SEMICONDUCTORS
ISSUE 1 - OCTOBER 2005
2
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) RθJA 200 °C/W
Junction to Ambient (b) RθJA 155 °C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDSS -30 V
Gate- Source Voltage VGS ⫾20 V
Continuous Drain Current
(VGS=-10V; TA=25°C)(b)
(VGS=-10V; TA=70°C)(b)
ID-1.1
-0.9
A
Pulsed Drain Current (c) IDM -4.3 A
Continuous Source Current (Body Diode)(b) IS-0.88 A
Pulsed Source Current (Body Diode)(c) ISM -4.3 A
Power Dissipation at TA=25°C (a)
Linear Derating Factor
PD625
5
mW
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor
PD806
6.4
mW
mW/°C
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ZXM61P03F
SEMICONDUCTORS
ISSUE 1 - OCTOBER 2005
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CHARACTERISTICS
ZXM61P03F
SEMICONDUCTORS
ISSUE 1 - OCTOBER 2005
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ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V(BR)DSS -30 V ID=-250µA, VGS=0V
Zero Gate Voltage Drain Current IDSS -1 µAVDS=-30V, VGS=0V
Gate-Body Leakage IGSS ⫾100 nA VGS=⫾20V, VDS=0V
Gate-Source Threshold Voltage VGS(th) -1.0 V ID=-250µA, VDS=V
GS
Static Drain-Source On-State Resistance (1) RDS(on) 0.35
0.55
Ω
Ω
VGS=-10V, ID=-0.6A
VGS=-4.5V, ID=-0.3A
Forward Transconductance (3) gfs 0.44 S VDS=-10V,ID=-0.3A
DYNAMIC (3)
Input Capacitance Ciss 140 pF
VDS=-25 V, VGS=0V,
f=1MHz
Output Capacitance Coss 45 pF
Reverse Transfer Capacitance Crss 20 pF
SWITCHING(2) (3)
Turn-On Delay Time td(on) 1.9 ns
VDD =-15V, ID=-0.6A
RG=6.2Ω,R
D=25Ω
(Refer to test circuit)
Rise Time tr2.9 ns
Turn-Off Delay Time td(off) 8.9 ns
Fall Time tf5.0 ns
Total Gate Charge Qg4.8 nC
VDS=-24V,VGS=-10V,
ID=-0.6A
(Refer to test circuit)
Gate-Source Charge Qgs 0.62 nC
Gate Drain Charge Qgd 1.3 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) VSD -0.95 V Tj=25°C, IS=-0.6A,
VGS=0V
Reverse Recovery Time (3) trr 14.8 ns Tj=25°C, IF=-0.6A,
di/dt= 100A/µs
Reverse Recovery Charge(3) Qrr 7.7 nC
NOTES:
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ⱕ2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXM61P03F
SEMICONDUCTORS
ISSUE 1 - OCTOBER 2005
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TYPICAL CHARACTERISTICS
ZXM61P03F
SEMICONDUCTORS
ISSUE 1 - OCTOBER 2005
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0.1 10 100 0 3
-VDS - Drain Source Voltage (V)
Capacitance v Drain-Source Voltage
0
200
)Fp( ecnaticapaC - C
ID=-0.6A
V
-
SG
)V(
eg
at
lo
V
e
c
r
uoS-etaG
-
10
0
Q -Charge (nC)
Gate-Source Voltage v Gate Charge
VDS=-15V
Coss
Crss
Vgs=0V
f=1MHz
1
Ciss
300
250
150
100
50
0.5 1 1.5 2 2.5
2
4
6
8
3.5 4 4.5
14
12
VDS=-24V
Current
regulator
Charge
Gate charge test circuit
Switching time test circuit
Basic gate charge waveform
Switching time waveforms
D.U.T
50k
12V Same as
D.U.T
V
GS
V
GS
VDS
VGQGS QGD
QG
VGS
90%
10%
t(on) t(on)
td(on)
tr
trtd(off)
V
DS
V
CC
R
D
R
G
V
DS
I
D
I
G
TYPICAL CHARACTERISTICS
ZXM61P03F
SEMICONDUCTORS
ISSUE 1 - OCTOBER 2005
7
Europe
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park
Chadderton, Oldham, OL9 9LL
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
© Zetex Semiconductors plc 2005
L
N
H
G
A
C
F
B
M
K
D
3 leads
PACKAGE DETAILS
mm
inches
0.8
0.031
0.9
0.035
0.95
0.037
2.0
0.079
PAD LAYOUT DETAILS
DIM
Millimeters Inches
DIM
Millimeters Inches
Min Max Min Max Min Max Max Max
A 2.67 3.05 0.105 0.120 H 0.33 0.51 0.013 0.020
B 1.20 1.40 0.047 0.055 K 0.01 0.10 0.0004 0.004
Cᎏ1.10 ᎏ0.043 L 2.10 2.50 0.083 0.0985
D 0.37 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025
F 0.085 0.15 0.0034 0.0059 N 0.95 NOM 0.0375 NOM
G 1.90 NOM 0.075 NOM ᎏᎏ ᎏ
PACKAGE DIMENSIONS
