ZXM61P03F
SEMICONDUCTORS
ISSUE 1 - OCTOBER 2005
4
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V(BR)DSS -30 V ID=-250µA, VGS=0V
Zero Gate Voltage Drain Current IDSS -1 µAVDS=-30V, VGS=0V
Gate-Body Leakage IGSS ⫾100 nA VGS=⫾20V, VDS=0V
Gate-Source Threshold Voltage VGS(th) -1.0 V ID=-250µA, VDS=V
GS
Static Drain-Source On-State Resistance (1) RDS(on) 0.35
0.55
Ω
Ω
VGS=-10V, ID=-0.6A
VGS=-4.5V, ID=-0.3A
Forward Transconductance (3) gfs 0.44 S VDS=-10V,ID=-0.3A
DYNAMIC (3)
Input Capacitance Ciss 140 pF
VDS=-25 V, VGS=0V,
f=1MHz
Output Capacitance Coss 45 pF
Reverse Transfer Capacitance Crss 20 pF
SWITCHING(2) (3)
Turn-On Delay Time td(on) 1.9 ns
VDD =-15V, ID=-0.6A
RG=6.2Ω,R
D=25Ω
(Refer to test circuit)
Rise Time tr2.9 ns
Turn-Off Delay Time td(off) 8.9 ns
Fall Time tf5.0 ns
Total Gate Charge Qg4.8 nC
VDS=-24V,VGS=-10V,
ID=-0.6A
(Refer to test circuit)
Gate-Source Charge Qgs 0.62 nC
Gate Drain Charge Qgd 1.3 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) VSD -0.95 V Tj=25°C, IS=-0.6A,
VGS=0V
Reverse Recovery Time (3) trr 14.8 ns Tj=25°C, IF=-0.6A,
di/dt= 100A/µs
Reverse Recovery Charge(3) Qrr 7.7 nC
NOTES:
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ⱕ2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.