Hutton Close, Crowther Ind Est, Washington, Tyne & Wear NE38 0AH, England
mailto:sales@isocom.uk.com - Tel: +44 (0)191 4166546 - Fax: +44 (0)191 4155055
Circuit
Features
Description
Absolute Maximum Ratings
Electrical Characteristics
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H11M3, H11M4
Optoisolator GaAlAs Infrared Emitting Diode
and Light Activated SCR
Circuit
Features
High blocking voltage, 600 V minimum
High isolation voltage, 3750 Vrms minimum (steady state)
High efficiency, low degradation, liquid epitaxial IRED
Logic compatible drive current, 7 mA at 1.5 V maximum
Unique, high performance glass dielectric construction
Description
The H11M4-H11M6 contain a gallium-aluminium-arsenide infrared emitting diode coupled to a unique high
voltage silicon controlled rectifier within a dual in-line package. These devices are optimised for high
performance and long life. They are especially suited for the control of industrial AC power lines from low
voltage logic integrated circuitry. Surface Mount Option Available.
All electrical parameters are 100% tested. Specifications are guaranteed to a cumulative 0.65% AQL.
Absolute Maximum Ratings: (Ta=25°C)
Storage Temperature:
Operating Temperature:
Lead Soldering:
Surge Isolation Voltage (Input to Output):
Steady-State Isolation Voltage (Input to Output):
-55°C to +150°C
-55°C to +100°C
260°C for 10s
5656 Vpeak; 4000 Vrms; (note 1)
5300 Vpeak; 3750 Vrms; (note 1)
Input Diode
Power Dissipation:
Derate Linearly:
Forward DC Current:
Forward Current (Peak):
Reverse Voltage:
100mW
1.33mW/°C above 25°C
60mA
1A (10µs 1% duty cycle)
6V
Output Photo SCR
Peak Forward Voltage:
RMS Forward Current:
Peak On-State Current (1 cycle surge, 10ms):
Peak Reverse Gate Voltage:
Power Dissipation:
Derate Linearly:
600V
300mA
3A
5V
400mW
5.3mW/°C above 25°C
Electro-optical Characteristics: (Ta=25°C)
EMITTER
PARAMETER
CONDITIONS
VALUE
VF
Forward Voltage
IF=10mA
1.3 V
Typ
1.65 V
Max
IR
Reverse Current
VR=5V
10 µA
Max
CJ
Capacitance
VAK=0V, f=1MHz
50 pF
Typ
DETECTOR
PARAMETER
CONDITIONS
VALUE
VDM
Off-State Voltage
RGK=10kohm, ID=100µA, TA=100°C
600 V
Min
VRM
Reverse Voltage
RGK=10kohm, IR=100µA, TA=100°C
600 V
Min
VTM
On-State Voltage
ITM=300mA
1.6 V
Max
IDM
Off-State Current
RGK=10kohm, VDM=600V, @
TA=100°C
100 µA
Max
...@ TA=25°C
400 nA
Max
IRM
Reverse Current
RGK=10kohm, VRM=600V, @
TA=100°C
100 µA
Max
...@ TA=25°C
400 nA
Max
dV/dt
Critical Rate-of-Rise of Off-State
Voltage
VAK=600V, RGK=10kohm
25 V/µs
Typ
IH
Holding Current
RGK=10kohm
2 mA
Max
COUPLED
PARAMETER
CONDITIONS
VALUE
IFT
Input Current to Trigger
H11M3
VAK=6V, RGK=10kohm
10 mA
Max
H11M4
20 mA
Max
H11M3
VAK=6V, RGK=27kohm
7 mA
Max
H11M4
15 mA
Max
RIO
Isolation Resistance (Input to Output)
VIO=500V, (note 1)
100
Gohm
Min
CIO
Isolation Capacitance (Input to
Output)
VIO=0, f=1MHz, (note 1)
2 pF
Max
Isolation dV/dt Immunity (Input to
Output)
Figure 10
500 V/µs
Min
Notes
1. Measured with input leads shorted together and output leads shorted together.
Isocom takes great effort to ensure accurate data, but regrettably cannot be held liable for any error on its
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