Absolute Maximum Ratings
Parameter Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 4.5
ID @ VGS = 10V, TC = 100°C Continuous Drain Current 3.0
IDM Pulsed Drain Current ➀18
PD @ TC = 25°C Max. Power Dissipation 75 W
Linear Derating Factor 0.6 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy ➁1.1 mJ
IAR Avalanche Current ➀4.5 A
EAR Repetitive Avalanche Energy ➀—mJ
dv/dt Peak Diode Recovery dv/dt ➂3.5 V/ns
TJOperating Junction -55 to 150
TSTG Storage Temperature Range
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
Weight 11.5 (typical) g
PD - 90336F
oC
A
01/22/01
www.irf.com 1
Product Summary
Part Number BVDSS RDS(on) ID
IRF430 500V 1.5 Ω 4.5A
For footnotes refer to the last page
REPETITIVE A V ALANCHE AND dv/dt RATED JANTX2N6762
HEXFETTRANSISTORS
JANTXV2N6762
THRU-HOLE (TO-204AA/AE)
[REF:MIL-PRF-19500/542]
IRF430
500V, N-CHANNEL
The HEXFETtechnology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
TO-3
Features:
nRepetitive Avalanche Ratings
nDynamic dv/dt Rating
nHermetically Sealed
nSimple Drive Requirements
nEase of Paralleling
IRF430
2www.irf.com
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction to Case — — 1.67
RthJA Junction to Ambient — — 30 Typical socket mount
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
ISContinuous Source Current (Body Diode) — — 4.5
ISM Pulse Source Current (Body Diode) ➀—— 18
VSD Diode Forward Voltage — — 1 .4 V Tj = 25°C, IS =4.5A, VGS = 0V ➃
trr Reverse Recovery Time — — 900 nS Tj = 25°C, IF =4.5A, di/dt ≤100A/µs
QRR Reverse Recovery Charge — — 7.0 µc VDD ≤50V ➃
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 500 — — V VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJTemperature Coefficient of Breakdown — 0.78 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State — — 1.50 VGS = 10V, ID =3.0A➃
Resistance — — 1.80 VGS =10V, ID =4.5A ➃
VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID =250µA
gfs Forward Transconductance 2.7 — — S ( ) V
DS > 15V, IDS =3.0A➃
IDSS Zero Gate Voltage Drain Current — — 2 5 VDS=400V, VGS=0V
— — 250 VDS =400V
VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Leakage Forward — — 100 VGS =20V
IGSS Gate-to-Source Leakage Reverse — — -100 VGS =-20V
QgTotal Gate Charge 16 — 4 0 VGS =10V, ID=4.5A
Qgs Gate-to-Source Charge 2.0 — 6.0 nC VDS =250V
Qgd Gate-to-Drain (‘Miller’) Charge 8.0 — 20
td(on) Turn-On Delay Time — — 30 VDD =250V, ID =4.5A,
trRise Time — — 4 0 RG =7.5Ω
td(off) Turn-Off Delay Time — — 80
tfFall Time — — 30
LS + LDTotal Inductance — 6.1 —
Ciss Input Capacitance — 610 VGS = 0V, VDS =25V
Coss Output Capacitance — 135 — pF f = 1.0MHz
Crss Reverse Transfer Capacitance — 6 5 —
nA
Ω
nH
ns
µA
Ω
Measured from the center of
drain pad to center of source
pad
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IRF430
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
IRF430
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
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IRF430
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RGD.U.T.
10V
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
IRF430
6www.irf.com
QG
QGS QGD
VG
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
10V
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IRF430
Foot Notes:
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 01/01
➂ ISD ≤4.5A, di/dt ≤75A/µs,
VDD≤ 500V, TJ ≤ 150°C
Suggested RG =7.5 Ω
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁ VDD =50V, starting TJ = 25°C,
Peak IL = 4.5A, ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Case Outline and Dimensions —TO-204AA (Modified TO-3)
