
IRF430
2www.irf.com
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction to Case — — 1.67
RthJA Junction to Ambient — — 30 Typical socket mount
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
ISContinuous Source Current (Body Diode) — — 4.5
ISM Pulse Source Current (Body Diode) ➀—— 18
VSD Diode Forward Voltage — — 1 .4 V Tj = 25°C, IS =4.5A, VGS = 0V ➃
trr Reverse Recovery Time — — 900 nS Tj = 25°C, IF =4.5A, di/dt ≤100A/µs
QRR Reverse Recovery Charge — — 7.0 µc VDD ≤50V ➃
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 500 — — V VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJTemperature Coefficient of Breakdown — 0.78 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State — — 1.50 VGS = 10V, ID =3.0A➃
Resistance — — 1.80 VGS =10V, ID =4.5A ➃
VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID =250µA
gfs Forward Transconductance 2.7 — — S ( ) V
DS > 15V, IDS =3.0A➃
IDSS Zero Gate Voltage Drain Current — — 2 5 VDS=400V, VGS=0V
— — 250 VDS =400V
VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Leakage Forward — — 100 VGS =20V
IGSS Gate-to-Source Leakage Reverse — — -100 VGS =-20V
QgTotal Gate Charge 16 — 4 0 VGS =10V, ID=4.5A
Qgs Gate-to-Source Charge 2.0 — 6.0 nC VDS =250V
Qgd Gate-to-Drain (‘Miller’) Charge 8.0 — 20
td(on) Turn-On Delay Time — — 30 VDD =250V, ID =4.5A,
trRise Time — — 4 0 RG =7.5Ω
td(off) Turn-Off Delay Time — — 80
tfFall Time — — 30
LS + LDTotal Inductance — 6.1 —
Ciss Input Capacitance — 610 VGS = 0V, VDS =25V
Coss Output Capacitance — 135 — pF f = 1.0MHz
Crss Reverse Transfer Capacitance — 6 5 —
nA
Ω
nH
ns
µA
Ω
Measured from the center of
drain pad to center of source
pad