AP9926O Advanced Power Electronics Corp. Low on-resistance N-CHANNEL ENHANCEMENT MODE POWER MOSFET G2 S2 Capable of 2.5V gate drive D2 Low drive current S2 TSSOP-8 S1 G1 S1 BVDSS 20V RDS(ON) 28m ID D1 4.6A Surface mount package Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D2 D1 G2 G1 S1 S2 Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25 ID@TA=70 Rating Units 20 V 8 V 3 4.6 A 3 3.7 A Continuous Drain Current Continuous Drain Current 1 IDM Pulsed Drain Current 20 A PD@TA=25 Total Power Dissipation 1 W Linear Derating Factor 0.008 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient Data and specifications subject to change without notice 3 Max. Value Unit 125 /W 20071902 AP9926O Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. 20 - - V - 0.1 - V/ VGS=4.5V, ID=4A - 23 28 m VGS=2.5V, ID=2A - - 40 m 0.5 - - V BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS 2 VDS=VGS, ID=250uA VDS=10V, ID=4.6A - 9.7 - S o VDS=20V, VGS=0V - - 1 uA o Drain-Source Leakage Current (Tj=70 C) VDS=20V ,VGS=0V - - 25 uA Gate-Source Leakage VGS= 8V - - 100 nA ID=4.6A - 12.5 - nC Drain-Source Leakage Current (Tj=25 C) IGSS VGS=0V, ID=250uA Max. Units 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=20V - 1 - nC Qgd Gate-Drain ("Miller") Charge VGS=5V - 6.5 - nC VDS=10V - 7 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=1A - 14.5 - ns td(off) Turn-off Delay Time RG=3.3,VGS=5V - 19 - ns tf Fall Time RD=10 - 12 - ns Ciss Input Capacitance VGS=0V - 355 - pF Coss Output Capacitance VDS=20V - 190 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 85 - pF Min. Typ. VD=VG=0V,VS=1.2V - - 0.83 A Tj=25,IS=1.25A,VGS=0V - - 1.2 V Source-Drain Diode Symbol IS VSD Parameter Continuous Source Current ( Body Diode ) 2 Forward On Voltage Test Conditions Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 208/W when mounted on Min. copper pad. Max. Units AP9926O 25 25 4.5V 4.0V 3.5V 3.0V 20 ID , Drain Current (A) ID , Drain Current (A) 20 2.5V 15 10 2.5V 15 10 V GS =2.0V V GS =2.0V 5 4.5V 4.0V 3.5V 3.0V 5 T C =150 o C T C =25 o C 0 0 0 0.5 1 1.5 2 2.5 0 3 0.5 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1.5 2 2.5 3 Fig 2. Typical Output Characteristics 45 1.8 I D = 4A I D = 4A T C =25 o C V GS =4.5V 1.6 Normalized R DS(ON) 40 RDS(ON) (m ) 1 V DS , Drain-to-Source Voltage (V) 35 30 1.4 1.2 1.0 25 0.8 0.6 20 1 2 3 4 5 V GS (V) Fig 3. On-Resistance v.s. Gate Voltage 6 -50 0 50 100 T j , Junction Temperature ( o C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 150 6 1.2 5 1 4 0.8 PD (W) ID , Drain Current (A) AP9926O 3 0.6 2 0.4 1 0.2 0 0 25 50 75 100 125 150 0 50 100 150 T c , Case Temperature ( o C) o T c , Case Temperature ( C) Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 100 1 Normalized Thermal Response (R thja) Duty Factor = 0.5 100us 10 ID (A) 1ms 1 10ms 100ms 0.1 1s T C =25 o C Single Pulse 0.2 0.1 0.1 0.05 0.02 0.01 PDM t 0.01 T Single Pulse Duty Factor = t/T Peak Tj = P DM x Rthja + Ta Rthja=208 oC/W DC 0.001 0.01 0.1 1 10 V DS (V) Fig 7. Maximum Safe Operating Area 100 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) Fig 8. Effective Transient Thermal Impedance AP9926O f=1.0MHz 1000 12 I D =4.6A VGS , Gate to Source Voltage (V) 10 Ciss V DS =10V V DS =15V 8 Coss C (pF) V DS =20V 6 100 Crss 4 2 10 0 0 5 10 15 20 1 25 5 9 13 17 21 25 29 V DS (V) Q G , Total Gate Charge (nC) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 1.6 100 1.4 10 1.2 T j =150 o C VGS(th) (V) IS (A) T j =25 o C 1 1 0.8 0.6 0.1 0.4 0.2 0.01 0 0.4 0.8 1.2 1.6 -50 0 50 100 Junction Temperature ( o C ) V SD (V) Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature 150 AP9926O VDS 90% RD VDS D 0.5x RATED VDS G RG TO THE OSCILLOSCOPE + 10% VGS S 5v VGS - td(on) Fig 13. Switching Time Circuit td(off) tf tr Fig 14. Switching Time Waveform VG VDS QG TO THE OSCILLOSCOPE D 5V RATED VDS G S QGS QGD VGS + 1~ 3 mA IG ID Charge Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform Q