AP2303GN RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement Small Package Outline D BVDSS -30V RDS(ON) 240m ID Surface Mount Device - 1.9A S SOT-23 Description G D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G S Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25 ID@TA=70 Rating Units - 30 V + 20 V 3 -1.9 A 3 -1.5 A Continuous Drain Current Continuous Drain Current 1,2 IDM Pulsed Drain Current -10 A PD@TA=25 Total Power Dissipation 1.38 W Linear Derating Factor 0.01 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 90 /W 1 200907153 AP2303GN Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. -30 - - V - -0.1 - V/ VGS=-10V, ID=-1.7A - - 240 m VGS=-4.5V, ID=-1.3A - - 460 m BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) VGS=0V, ID=-250uA Static Drain-Source On-Resistance 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - - V gfs Forward Transconductance VDS=-10V, ID=-1.7A - 2 - S IDSS Drain-Source Leakage Current VDS=-30V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=70 C) VDS=-30V, VGS=0V - - -10 uA Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA ID=-1.7A - 6.2 - nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-15V - 1.4 - nC Qgd Gate-Drain ("Miller") Charge VGS=-10V - 0.3 - nC VDS=-15V - 7.6 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-1A - 8.2 - ns td(off) Turn-off Delay Time RG=6,VGS=-10V - 17.5 - ns tf Fall Time RD=15 - 9 - ns Ciss Input Capacitance VGS=0V - 230 - pF Coss Output Capacitance VDS=-15V - 130.4 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 40 - pF Min. Typ. - - -1 A - - -10 A - - -1.2 V Source-Drain Diode Symbol IS ISM VSD Parameter Test Conditions VD=VG=0V , VS=-1.2V Continuous Source Current ( Body Diode ) Pulsed Source Current ( Body Diode ) 1 2 Forward On Voltage IS=-1.25A, VGS=0V Max. Units Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board ; 270/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP2303GN 10 10 o T A =25 C o 6 V G =-4.0V 4 -10V -8.0V -6.0V -5.0V 8 -ID , Drain Current (A) 8 -ID , Drain Current (A) T A =150 C -10V -8.0V -6.0V -5.0V 6 4 V G =-4.0V 2 2 0 0 0 1 2 3 4 0 5 -V DS , Drain-to-Source Voltage (V) 1 2 3 4 5 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.8 250 I D =-1.7A 1.6 I D =-1.3A T A =25 Normalized RDS(ON) V G = -10V RDSON (m) 200 150 1.4 1.2 1 0.8 0.6 100 3 5 7 9 -50 11 Fig 3. On-Resistance v.s. Gate Voltage 50 100 150 Fig 4. Normalized On-Resistance 3 1 2 -IF(A) -VGS(th) (V) 10 T j =150 o C 0 T j , Junction Temperature ( o C) -V GS , Gate-to-Source Voltage (V) T j =25 o C 1 0 0 0 0.1 0.3 0.5 0.7 0.9 1.1 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.3 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP2303GN 14 f=1.0MHz 1000 I D = -1.7A V DS = -15V 10 C iss C (pF) -VGS , Gate to Source Voltage (V) 12 8 C oss 100 6 C rss 4 2 0 10 0 2 4 6 8 1 5 9 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics 17 21 25 29 Fig 8. Typical Capacitance Characteristics 100 Normalized Thermal Response (Rthja) 1 10 -ID (A) 13 -V DS , Drain-to-Source Voltage (V) 1ms 1 10ms 0.1 100ms 1s DC T A =25 o C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 PDM 0.01 t T 0.01 Single Pulse Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja = 270/W 0.001 0.01 0.1 1 10 100 0.0001 0.001 0.01 -V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG -10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4