Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BVDSS -30V
▼ Small Package Outline RDS(ON) 240mΩ
▼ Surface Mount Device ID- 1.9A
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TA=25℃A
ID@TA=70℃A
IDM A
PD@TA=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient390 ℃/W
Data and specifications subject to change without notice
RoHS-compliant Product
Thermal Data
Parameter
Total Power Dissipation 1.38
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor
Storage Temperature Range
Continuous Drain Current3-1.5
Pulsed Drain Current1,2 -10
0.01
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
200907153
1
AP2303GN
Rating
- 30
+ 20
-1.9
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness. G
D
S
D
G
S
SOT-23
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.1 - V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=-10V, ID=-1.7A - - 240 mΩ
VGS=-4.5V, ID=-1.3A - - 460 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - - V
gfs Forward Transconductance VDS=-10V, ID=-1.7A - 2 - S
IDSS Drain-Source Leakage Current VDS=-30V, VGS=0V - - -1 uA
Drain-Source Leakage Current (Tj=70oC) VDS=-30V, VGS=0V - - -10 uA
IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA
QgTotal Gate Charge2ID=-1.7A - 6.2 - nC
Qgs Gate-Source Charge VDS=-15V - 1.4 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-10V - 0.3 - nC
td(on) Turn-on Delay Time2VDS=-15V - 7.6 - ns
trRise Time ID=-1A - 8.2 - ns
td(off) Turn-off Delay Time RG=6Ω,VGS=-10V - 17.5 - ns
tfFall Time RD=15Ω-9-
ns
Ciss Input Capacitance VGS=0V - 230 - pF
Coss Output Capacitance VDS=-15V - 130.4 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 40 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
ISContinuous Source Current ( Body Diode ) VD=VG=0V , VS=-1.2V - - -1 A
ISM Pulsed Source Current ( Body Diode )1- - -10 A
VSD Forward On Voltage2IS=-1.25A, VGS=0V - - -1.2 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2303GN
AP2303GN
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
Fi
g
5. Forward Characteristic o
f
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0
2
4
6
8
10
012345
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TA=150oC
VG=-4.0V
-10V
-8.0V
-6.0V
-5.0V
100
150
200
250
357911
-VGS , Gate-to-Source Voltage (V)
RDSON (m
Ω
)
I
D=-1.3A
TA=25
℃
0.6
0.8
1
1.2
1.4
1.6
1.8
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
VG= -10V
ID=-1.7A
0
2
4
6
8
10
012345
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TA=25oC-10V
-8.0V
-6.0V
-5.0V
VG=-4.0V
0
0
1
10
0.1 0.3 0.5 0.7 0.9 1.1 1.3
-VSD , Source-to-Drain Voltage (V)
-IF(A)
Tj=25oCTj=150oC
0
1
2
3
-50 0 50 100 150
Tj , Junction Temperature ( oC)
-VGS(th) (V)
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fi
g
10. Effective Transient Thermal Im
p
edanc
e
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
AP2303GN
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthja)
0.01
0.05
0.1
0.2
Duty factor=0.5
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 270℃/W
tT
Single Pulse
0.01
0.1
1
10
100
0.1 1 10 100
-VDS , Drain-to-Source Voltage (V)
-ID (A)
TA=25oC
Single Pulse
1ms
10ms
100ms
1s
DC
0
2
4
6
8
10
12
14
02468
QG , Total Gate Charge (nC)
-VGS , Gate to Source Voltage (V)
ID= -1.7A
VDS = -15V
10
100
1000
1 5 9 13 17 21 25 29
-VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
td(on) trtd(off)tf
VDS
VGS
10%
90%
Q
VG
-10V
QGS QGD
QG
Charge
