2SC5548A
2002-07-23
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5548A
High Voltage Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
• High sp eed swit ching: tr = 0.5 µs (max), tf = 0.3 µs (max) (IC = 0.8 A)
• High co llector breakdown voltage: VCEO = 400 V
• High DC current gai n: hFE = 40 (min) (IC = 0.2 A)
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 600 V
Collector-emitter voltage VCEO 400 V
Emitter-base voltage VEBO 7 V
DC IC 2
Collector current
Pulse ICP 4
A
Base current IB 0.5 A
Ta = 25°C 1.0
Collector power
dissipation Tc = 25°C
PC
15
W
Junction temperature Tj 150 °C
Storage temperature range Tstg −55 to 150 °C
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-7B1A
Weight: 0.36 g (typ.)
JEDEC ―
JEITA ―
TOSHIBA 2-7J1A
Weight: 0.36 g (typ.)
2SC5548A
2002-07-23
2
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO V
CB = 480 V, IE = 0 ― ― 20 µA
Emitter cut-off current IEBO V
EB = 7 V, IC = 0 ― ― 10 µA
Collector-base breakdown voltage V (BR) CBO I
C = 1 mA, IE = 0 600 ― ― V
Collector-emitter breakdown voltage V (BR) CEO I
C = 10 mA, IB = 0 400 ― ― V
hFE (1) V
CE = 5 V, IC = 1 mA 20 ― ―
DC current gain
hFE (2) V
CE = 5 V, IC = 0.2 A 40 ― 100
Collector emitter saturation voltage VCE (sat) I
C = 0.8 A, IB = 0.1 A ― ― 1.0 V
Base-emitter saturation voltage VBE (sat) I
C = 0.8 A, IB = 0.1 A ― ― 1.3 V
Rise time tr ― ― 0.5
Storage time tstg ― ― 3.0
Switching time
Fall time tf
IB1 = 0.1 A, IB2 = −0.2 A
DUTY CYCLE ≤ 1%
― ― 0.3
µs
Marking
Explanation of Lot No.
Month of manufacture: January to December are denoted by letters A to L respectively.
Year of manufacture: last decimal digit of the year of manufacture
IB1
20 µs VCC ≈ 200 V
INPUT
OUT-
PUT
250 Ω
IB21
IB1
IB2
IC
C5548A Product No.
Lot No.
2SC5548A
2002-07-23
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Base-emitter saturation voltage
VBE (sat) (V)
Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (A)
Collector current IC (A)
hFE – IC
DC current gain hFE
Collector current IC (A)
VCE (sat) – IC
Collector-emitter saturation voltage
VCE (sat) (V)
Collector current IC (A)
VBE (sat) – IC
Base-emitter voltage VBE (V)
IC – VBE
Collector current IC (A)
Collector power dissipation PC (W)
Ambient temperature Ta (°C)
PC – Ta
40
60
100
0
0
Common emitter
Tc = 25°C
150
IB = 10 mA
80
20
1.6
1.2
0.4
2 4 6 8 10
0.8
2.0
200
0.01
10
Common emitter
IC/IB = 8
Tc = 100°C
−55
25
3
0.3
0.03
0.03 0.3 1 10
1
0.1
0.1 3
1000
1
0.001
Common emitter
VCE = 5 V
Tc = 100°C
−55
25
0.003 0.01 0.03 0.1 0.3 1
300
3
100
30
10
3
10
0.01
Tc = 100°C
25 −55
3
0.3
0.1
0.1 0.3 3
Common emitter
IC/IB = 8
0.03 1
1
( 1) Tc = Ta
infinite heat sink
(2) No heat sink
0
0 25 50 75 100 125 150 175 200
4
8
12
16
20
(1)
(2)
0.4
2.0
0 1.6
0.8
1.2
1.6
0.4 0.8 1.2
Common emitter
VCE = 5 V
Tc = 100°C −55 25
0
2SC5548A
2002-07-23
4
rth – tw
Transient thermal resistance rth (°C/W)
Collector-emitter voltage VCE (V)
Safe Operating Area
Collector current IC (A)
Pulse width tw (s)
Collector current IC (A)
Switching Characteristics – IC
Switching time (µs)
IC = 8IB1
2IB1 = −IB2
VCC ≈ 200 V
Pulse width = 20µs
Duty cycle
≤ 1％
Tc = 25°C
5
0.1
0.1 0.3 0.5 1 3 5 10
1
3
0.3
0.5
tstg
tf
Curves should be applied in thermal
limited area. (single nonrepetitive pulse)
(1) Infinite heat sink
(2) No heat sink
300
0.5
0.001 1000
0.01 0.1 1 10 100
1
3
10
5
30
100
50
(1)
(2)
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
IC max
(continuous)
0.001
10
DC operation
Tc = 25°C
1 ms*
10 ms*
VCEO max
100 µs*
100 ms*
IC max (pulsed)*
1 3 100 1000 10 30 300
0.1
1
0.01
10 µs*
3
5
0.3
0.5
0.03
0.05
0.003
0.005
2SC5548A
2002-07-23
5
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
• The information contained herein is subject to change without notice.
000707EA
A
RESTRICTIONS O N PRODUCT USE
