IXFP16N50P3 - Zilog - Datasheet.Live

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 150°C 500 V

VDGR TJ= 25°C to 150°C, RGS = 1MΩ500 V

VGSS Continuous ±30 V

VGSM Transient ±40 V

ID25 TC= 25°C16A

IDM TC= 25°C, Pulse Width Limited by TJM 40 A

IATC= 25°C8A

EAS TC= 25°C 300 mJ

dv/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 35 V/ns

PDTC= 25°C 330 W

TJ-55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

TL1.6mm (0.062) from Case for 10s 300 °C

TSOLD Plastic Body for 10s 260 °C

FCMounting Force (TO-263) 10..65 / 2.2..14.6 N/lb.

MdMounting Torque (TO-220 & TO-247) 1.13 / 10 Nm/lb.in.

Weight TO-263 2.5 g

TO-220 3.0 g

TO-247 6.0 g

DS100456(03/12)

Polar3 TM HiPerFETTM

Power MOSFETs

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Rectifier

VDSS = 500V

ID25 = 16A

RDS(on) ≤≤

≤≤

≤ 360mΩΩ

ΩΩ

Ω

Features

zInternational Standard Packages

zFast Intrinsic Rectifier

zAvalanche Rated

zLow RDS(ON) and QG

zLow Package Inductance

Advantages

zHigh Power Density

zEasy to Mount

zSpace Savings

Applications

zSwitch-Mode and Resonant-Mode

Power Supplies

zDC-DC Converters

zLaser Drivers

zAC and DC Motor Drives

zRobotics and Servo Controls

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

BVDSS VGS = 0V, ID = 1mA 500 V

VGS(th) VDS = VGS, ID = 2.5mA 3.0 5.0 V

IGSS VGS = ±30V, VDS = 0V ±100 nA

IDSS VDS = VDSS, VGS = 0V 15 μA

TJ = 125°C 250 μA

RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 360 mΩ

Advance Technical Information

IXFA16N50P3

IXFP16N50P3

IXFH16N50P3

G = Gate D = Drain

S = Source Tab = Drain

TO-247 (IXFH)

G

SD (Tab)

D

GDS

TO-220AB (IXFP)

D (Tab)

TO-263 AA (IXFA)

G

S

D (Tab)

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFA16N50P3 IXFP16N50P3

IXFH16N50P3

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max

gfs VDS = 20V, ID = 0.5 • ID25, Note 1 9 15 S

RGi Gate Input Resistance 2.8 Ω

Ciss 1515 pF

Coss VGS = 0V, VDS = 25V, f = 1MHz 193 pF

Crss 7 pF

td(on) 19 ns

tr 6 ns

td(off) 44 ns

tf 9 ns

Qg(on) 29 nC

Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 7 nC

Qgd 10 nC

RthJC 0.38 °C/W

RthCS TO-220 0.50 °C/W

TO-247 0.21 °C/W

Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537

Resistive Switching Times

VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25

RG = 10Ω (External)

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max

ISVGS = 0V, Note1 16 A

ISM Repetitive, Pulse Width Limited by TJM 64 A

VSD IF = IS, VGS = 0V, Note 1 1.4 V

trr 250 ns

QRM 0.8 μC

IRM 8.7 A

IF = 8A, -di/dt = 100A/μs

VR = 100V

TO-263 Outline

1 = Gate

2 = Drain

3 = Source

4 = Drain

Pins: 1 - Gate 2 - Drain

3 - Source

TO-220 Outline

TO-247 Outline

1 = Gate

2 = Drain

3 = Source

IXFA16N50P3 IXFP16N50P3

IXFH16N50P3

Fi g . 1. Ou tpu t C har ac ter i sti cs @ T

J

= 25ºC

0

2

4

6

8

10

12

14

16

0123456

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

5

V

6

V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

4

8

12

16

20

24

28

32

36

40

0 5 10 15 20 25 30

V

DS

- Vo lts

I

D

- Amperes

V

GS

= 10V

8V

6

V

5

V

7

V

Fi g . 3. Ou tpu t C har ac ter i sti cs @ T

J

= 125º C

0

2

4

6

8

10

12

14

16

02468101214

V

DS

- Volts

I

D

- Amper es

4

V

6V

5V

V

GS

= 10V

7V

Fig. 4. R

DS(on)

No r maliz ed to I

D

= 8A Valu e vs.

Junction T emperature

0.2

0.6

1.0

1.4

1.8

2.2

2.6

3.0

3.4

-50 -25 0 25 50 75 100 125 150

T

J

- Deg re es Centigrad e

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 16A

I

D

= 8A

Fig. 5. R

DS(on)

No r mali z ed to I

D

= 8A Value vs.

Drain Current

0.6

1.0

1.4

1.8

2.2

2.6

3.0

3.4

3.8

0 4 8 12 16 20 24 28 32 36 40

I

D

- Amp e res

R

DS(on)

- Normalized

V

GS

= 10V T

J

= 125ºC

T

J

= 25ºC

Fi g. 6. Maximu m Drain C u rr en t vs.

Case Temper atu r e

0

2

4

6

8

10

12

14

16

18

-50 -25 0 25 50 75 100 125 150

T

C

- Deg re es Centigrad e

I

D

- Amper es

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFA16N50P3 IXFP16N50P3

IXFH16N50P3

Fig. 7. Input Admittance

0

2

4

6

8

10

12

14

16

18

20

3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0

V

GS

- V olts

I

D

- Amperes

T

J

= 125ºC

- 40ºC

25ºC

Fig. 8. Transconductance

0

5

10

15

20

25

30

0 2 4 6 8 10 12 14 16 18 20 22

I

D

- Amp eres

g

f s

- Siemens

T

J

= - 40ºC

125ºC

25ºC

Fig. 9. Forward Voltage Drop of Intrinsic Diode

0

5

10

15

20

25

30

35

40

45

50

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

V

SD

- Vo lts

I

S

- Amperes

T

J

= 125ºC

T

J

= 25ºC

Fig. 10. Gate Charge

0

1

2

3

4

5

6

7

8

9

10

0 5 10 15 20 25 30

Q

G

- NanoCoulombs

V

GS

- Volt s

V

DS

= 2 50V

I

D

= 8A

I

G

= 10mA

Fig. 11. Capacitance

1

10

100

1,000

10,000

0 5 10 15 20 25 30 35 40

V

DS

- Vo lts

Capacitance - PicoFarads

f

= 1 MHz

Ciss

Crss

Coss

Fi g . 12. F o r war d -B i as Safe Op erat in g Area

0.1

1

10

100

10 100 1,000

V

DS

- V olts

I

D

- Amperes

T

J

= 150ºC

T

C

= 25ºC

Single Pulse

100µs

1ms

R

DS(on)

Limit

25µs

IXFA16N50P3 IXFP16N50P3

IXFH16N50P3

Fig. 13. Maximum Transient Thermal Impedance

0.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z(th)JC - ºC / W