KA2S0680B S P S
S P S
FEATURES
• Wide operating frequency range up to 150kHz
• Pulse by pulse over current limiting
• Over current protection
• Over voltage protection (Min. 23V)
• Internal thermal shutdown function
• Under voltage lockout
• Internal high voltage sense FET
• External sync terminal
• Latch up Mode
ORDERING INFORMATION
Device Package Rating Topr (°
°°
°C)
KA2S0680B TO-3P-5L 800V, 6A −25°C to +85°C
TO-3P-5L
1.DRAIN 2. GND 3. VCC 4. FB 5. Sync
BLOCK DIAGRAM
#3 VCC 32V
2µA
5V
2.5R1R
1mA
0.1V
+
−
OVER VOLTAGE S/D
+
−
7.5V
25V
Thermal S/D
S
RQ
Power on reset
+
−L.E.B
S
RQ
OSC
5V
Vref Internal
bias
Good
logic
SFET #1 DRAIN
#2 GND
#4 FB
#5 Sync
9V
+
−
6.4V
The SPS product family is specially designed for an off-line SMPS
with minimal external components. The SPS consist of high voltage
power SenseFET and current mode PWM IC.
Included PWM controller features integrated fixed oscillator, under
voltage lock out, leading edge blanking, optimized gate turn-on/turn-
off driver, thermal shut down protection, over voltage protection, and
temperature compensated precision current sources for loop
compensation and fault protection circuitry. Compared to discrete
MOSFET and controlle r or RCC switching co nverter solution , a SPS
can reduce total component count, design size, weight and at the
same time increase efficiency, productivity, and system reliability.
It has a basic platform well suited for cost effective design in monitor
power supply.
KA2S0680B S P S
ABSOLUTE MAXIMUM RATINGS
NOTES:
1. Tj=25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L=24mH, starting Tj=25°C
4. L=13uH, starting Tj=25°C
Characteristic Symbol Value Unit
Drain-source (GND) voltage (1) VDSS 800 V
Drain-G ate vo ltag e (RGS=1MΩ)V
DGR 800 V
Gate-sou rce (GND) voltage VGS ±30 V
Drain current pulsed (2) IDM 24.0 ADC
Single pulsed avalanche energy (3) EAS 455 mJ
Avalanche current(4) IAS 20 A
Continuous drain current (TC=25°C) ID6.0 ADC
Continuous drain current (TC=100°C) ID4.0 ADC
Supply voltage VCC 30 V
Analog input voltage range VFB −0.3 to VSD V
Total power dissipation PD (watt H/S) 150 W
Derating 1.21 W/°C
Operating temperature TOPR −25 to +85 °C
Storage temperature TSTG −55 to +150 °C
KA2S0680B S P S
NOTE: Pulse test: Puls e width ≤ 300µS, duty cycle ≤ 2%
ELECTRICAL CHARACTERISTICS (SFET part)
(Ta=25°C unless otherwise specified)
Characteristic Symbol Test condition Min. Typ. Max. U nit
Drain-source breakdown voltage BVDSS VGS=0V, ID=50µA800
−−V
Zer o gate voltage drain current IDSS VDS=Max., Rating, VGS=0V −−
50 µA
VDS=0.8Max., Rati ng,
VGS=0V, TC=125°C−−
200 µA
Static drain -s ou rce on res ista nc e (note) RDS(ON) VGS=10V, ID=4.0A −1.6 2.0 Ω
Forward transconductance (note) gfs VDS=15V, ID=4.0A 1.5 2.5 −mho
Input cap acita nc e Ciss VGS=0V, VDS=25V,
f=1MHz −1600 −pF
Output capacitance Coss −140 −
Reverse transfer capacitance Crss −42 −
Turn on delay time td(on) VDD=0.5BVDSS, ID=6.0A
(MOSFET switching
time are essentially
independent of
operati ng temp eratu re )
−60 −nS
Rise time tr −150 −
Turn off delay time td(off) −300 −
Fall time tf −130 −
Total gate charge
(gate-source+gate-drain) Qg VGS=10V, ID=6.0A,
VDS=0.5BVDSS (MOSFET
switching time are
essentially independent of
operati ng temp eratu re )
−70 −nC
Gate-source char ge Qgs −16 −
Gate-drain (Miller) charge Qgd −27 −
KA2S0680B S P S
NOTES:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS (wafer test) process
3. The amplitude of the sync. pulse is recommended to be between 2V and 3V for stable sync. function.
ELECTRICAL CHARACTERISTICS (Control part)
(Ta=25°C unless otherwise specified)
Characteristic Symbol Test condition Min. Typ. Max. Unit
REFERENCE SECTION
Output voltage (1) Vref Ta=25°C 4.80 5.00 5.20 V
Temperature Stability (1)(2) Vref/∆T−25°C≤Ta≤+85°C−0.3 0.6 mV/°C
OSCILLATOR SECTION
Initial accuracy FOSC Ta=25°C 182022kHz
Frequency change with temperature (2) ∆F/∆T−25°C≤Ta≤+85°C−±
5±10 %
Sync threshold voltage (3) VSYTH Vfb=5V 6.0 6.4 6.8 V
PWM SECTION
Maximum duty cycle Dmax −92 95 98 %
FEEDBACK SECTION
Feedback source current IFB Ta=25°C, Vfb=GND 0.7 0.9 1.1 mA
Shutdown delay current Idelay Ta=25°C, 5V≤Vfb≤VSD 1.4 1.8 2.2 µA
OVER CURRENT PROTECTION SECTION
Over current protection IL(max) Max. inductor current 3.52 4.00 4.48 A
UVLO SECTION
Start threshold voltage Vth(H) −14 15 16 V
Minimum operating voltage Vth(L) After turn on 9 10 11 V
TOTAL STANDBY CURRENT SECTION
Start current IST VCC=14V 0.1 0.3 0.55 mA
Operating supply current
(control part only) IOPR Ta=25°C 6 12 18 mA
VCC zener voltage VZICC=20mA 30 32.5 35 V
SHUTDOWN SECTION
Shutdown Feedback voltage VSD −6.9 7.5 8.1 V
Thermal shutdown temperature (Tj) (1) TSD −140 160 −°
C
Over voltage protection voltage VOVP −23 25 28 V
SOFT START SECTION
Soft start current ISS Sync & S/S=GND 0.8 1.0 1.2 mA
Soft start voltage VSS VFB=2V 4.7 5.0 5.3 V
KA2S0680B S P S
TYPICAL PERFORMANCE CHARACTERISTICS
(These characteristic graphs are normalized at Ta=25°C)
Fig. 1 Operating F r equency
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
Fosc
Fig. 2 F ee dbac k S ourc e Cur r ent
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25 0 25 50 75 100 125 150
Ifb
Fig. 3 Operating Cur rent
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25 0 25 50 75 100 125 150
Iop
Fig. 4 Max I nductor Current
0.8
0.85
0.9
0.95
1
1.05
1.1
-25 0 25 50 75 100 125 150
Ipeak
Fig. 5 S t ar t up Curr ent
0.5
0.7
0.9
1.1
1.3
1.5
-25 0 25 50 75 100 125 150
Istart
Fig. 6 S tart T hr e shold Voltage
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Vstart
Temperature [°C] Tempera ture [°C]
Temperature [°C] Tempera ture [°C]
Temperature [°C]Temperature [°C]
Figure 1. Operating Frequency Figure 2. Feedback Source Current
Figure 3. Operating Current Figure 4. Max. Inductor Current
Figure 5. Start up Current Figure 6. Start Threshold Voltage
KA2S0680B S P S
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(These characteristic graphs are normalized at Ta=25°C)
Fig. 7 S top T hre shold Volta ge
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Vstop
F ig. 8 Maximum Dut y Cycle
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Dmax
Fig. 9 Vcc Zener Voltage
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25 0 25 50 75 100 125 150
Vz
Fig. 10 S hu tdow n Feed back Volt a ge
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Vsd
Fig. 11 S hu tdow n Delay Curr en t
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25 0 25 50 75 100 125 150
Idelay
Fig. 12 Over Voltage P r otection
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Vovp
Temperature [°C] Tempera ture [°C]
Temperature [°C] Tempera ture [°C]
Temperature [°C]Temperature [°C]
Figure 7. Stop Threshold Voltage Figure 8. Maximum Duty Cycle
Figure 9. VCC Zener Voltage Figure 10. Shutdown Feedback Voltage
Figure 11. Shutdown Delay Current Figure 12. Over Voltage Protection
KA2S0680B S P S
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(These characteristic grahps are normalized at Ta=25°C)
Figure 13. Soft Start Voltage Figure 14. Drain Source Turn-on Resistance
Fi g.13 S oft S tart Voltage
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Vss
Fi g.14 Drain S ourc e Tur n-on
Resistance
0
0.5
1
1.5
2
2.5
-25 0 25 50 75 100 125 150
Rdson
Tem pera ture [°C] Temperature [°C]
KA2S0680B
12/28/99 0.0m 001
Stock#DSxxxxxxxx
1999 Fairchild Semiconductor Corporation
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for us e provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
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