8-PIN BI-DIRECTIONAL TRANSISTOR OPTOCOUPLER H11ADB6 H11ADB61 H11ADB62 DESCRIPTION The H11ADB series optocouplers have two channels for high density applications. The inverse parallel channel orientation is ideal for applications which require data to be both transmitted and received on each side of the isolation boundary. Each channel consists of a GaAs LED optically coupled to a silicon NPN phototransistor. 8 1 FEATURES * Inverse parallel channel orientation 8 8 * High isolation voltage 5300 VAC RMS-1 minute, 7500 VAC PEAK-1 minute 1 1 * High BVCEO minimum 70 volts * Two isolated channels per package SCHEMATIC * Underwriters Laboratory (UL) recognized file #E90700 ANODE 1 8 COLLECTOR APPLICATIONS CATHODE 2 7 EMITTER EMITTER 3 6 CATHODE * AC line/Digital logic * Digital logic/Digital logic COLLECTOR 4 5 ANODE ABSOLUTE MAXIMUM RATINGS (No derating required up to 85C) Rating Symbol Value Unit EMITTER (Each channel) Forward Current - Continuous IF 60 mA IF(pk) 3.0 A Reverse Voltage VR 5 V LED Power Dissipation @ TA = 25C Derate above 25C PD 100 1.33 mW mW/C IC 50 mA Collector-Emitter Breakdown Voltage BVCEO 70 V Emitter-Collector Breakdown Voltage BVECO 7 V PD 150 2.0 mW mW/C Forward Current - Peak (PW = 1s, 300pps) DETECTOR (Each channel) Collector Current - Continuous Detector Power Dissipation @ TA = 25C Derate above 25C TOTAL DEVICE Storage Temperature TSTG -55 to +125 C Operating Temperature TOPR -55 to +100 C Lead Solder Temperature (wave solder) TSOL 260 for 10 sec C PD 400 5.33 mW mW/C Total Device Power Dissipation @ TA = 25C Derate above 25C (c) 2003 Fairchild Semiconductor Corporation Page 1 of 8 7/18/03 8-PIN BI-DIRECTIONAL TRANSISTOR OPTOCOUPLER H11ADB6 H11ADB61 H11ADB62 ELECTRICAL CHARACTERISTICS (TA = 25C Unless otherwise specified.) INDIVIDUAL COMPONENT CHARACTERISTICS Parameter Test Conditions Symbol Min Typ** Max Unit EMITTER Input Forward Voltage (IF = 20 mA) VF 1.23 1.5 V (VR = 5 V) IR 0.001 10 A (VF = 0 V, f = 1 MHz) CJ 50 pF Collector-Emitter Breakdown Voltage (IC = 1.0 mA, IF = 0) BVCEO 70 100 V Emitter-Collector Breakdown Voltage (IE = 100 A, IF = 0) BVECO 7 10 V (VCE = 10 V, IF = 0) ICEO 1 (VCE = 0 V, f = 1 MHz) CCE 8 Reverse Current Junction Capacitance DETECTOR Collector-Emitter Dark Current Capacitance 100 nA pF TRANSFER CHARACTERISTICS AC Characteristic Test Conditions Symbol Min Typ** Max Units SWITCHING TIMES Non-Saturated Turn-on Time (RL = 100 , IC = 2 mA, VCC = 10 V) ton 2.4 18 s Non-Saturated Turn-off Time (RL = 100 , IC = 2 mA, VCC = 10 V) toff 2.4 18 s Typ** Max Units TRANSFER CHARACTERISTICS DC Characteristic Test Conditions Symbol Min Current Transfer Ratio, Collector-Emitter H11ADB6 H11ADB61 (IF = 5 mA, VCE = 5 V) CTR H11ADB62 Saturation Voltage 20 50 % 200 (IF = 10 mA, IC = 2.5 mA) VCE(sat) 400 0.15 0.40 V Typ** Max Units ISOLATION CHARACTERISTICS Characteristic Input-Output Isolation Voltage Isolation Resistance Isolation Capacitance Test Conditions Symbol Min VISO 5300 Vac(rms) (VI-O = 500 VDC) RISO 1011 (f = 1 MHz) CISO (f = 60 Hz, t = 1 min.) 0.5 pf ** All typicals at TA = 25C (c) 2003 Fairchild Semiconductor Corporation Page 2 of 8 7/18/03 8-PIN BI-DIRECTIONAL TRANSISTOR OPTOCOUPLER H11ADB6 H11ADB61 H11ADB62 Normalized CTR vs. Ambient Temperature Normalized CTR vs. Forward Current 1.6 1.4 VCE = 5.0V TA = 25C Normalized to IF = 10 mA 1.2 1.4 IF = 5 mA NORMALIZED CTR NORMALIZED CTR 1.0 08 0.6 1.2 IF = 10 mA 1.0 0.8 0.4 0.6 0.2 0.0 0 5 10 15 Normalized to IF = 10 mA TA = 25C 0.4 -75 20 -50 IF = 20 mA -25 0 25 50 75 100 125 TA - AMBIENT TEMPERATURE (C) IF - FORWARD CURRENT (mA) Dark Current vs. Ambient Temperature ICEO - COLLECTOR-EMITTER DARK CURRENT (A) 101 VCE = 10 V 100 10-1 10-2 10-3 10-4 10-5 10-6 0 25 50 75 100 125 TA - AMBIENT TEMPERATURE (C) (c) 2003 Fairchild Semiconductor Corporation Page 3 of 8 7/18/03 8-PIN BI-DIRECTIONAL TRANSISTOR OPTOCOUPLER H11ADB6 H11ADB61 H11ADB62 Switching Speed vs. Load Resistor LED Forward Voltage vs. Forward Current 1.8 1000 IF = 10 mA VCC = 10 V TA = 25C 1.7 VF - FORWARD VOLTAGE (V) SWITCHING SPEED - (s) 100 Toff Tf 10 Ton Tr 1 1.6 1.5 1.4 TA = 55C 1.3 TA = 25C 1.2 1.1 TA = 100C 0.1 1.0 0.1 1 10 100 1 10 R-LOAD RESISTOR (k) 100 IF - LED FORWARD CURRENT (mA) VCE (SAT) - COLLECTOR-EMITTER SATURATION VOLTAGE (V) Collector-Emitter Saturation Voltage vs Collector Current 100 TA = 25C 10 1 IF = 2.5 mA 0.1 0.01 IF = 10 mA IF = 20 mA IF = 5 mA 0.001 0.01 0.1 1 10 IC - COLLECTOR CURRENT (mA) (c) 2003 Fairchild Semiconductor Corporation Page 4 of 8 7/18/03 8-PIN BI-DIRECTIONAL TRANSISTOR OPTOCOUPLER H11ADB6 H11ADB61 Package Dimensions (Through Hole) H11ADB62 Package Dimensions (Surface Mount) 0.390 (9.91) 0.370 (9.40) PIN 1 ID. 4 3 2 1 4 3 2 1 PIN 1 ID. 0.270 (6.86) 0.250 (6.35) 5 6 7 0.270 (6.86) 0.250 (6.35) 8 SEATING PLANE 0.390 (9.91) 0.370 (9.40) 5 6 0.070 (1.78) 0.045 (1.14) 7 8 0.300 (7.62) TYP 0.070 (1.78) 0.045 (1.14) 0.020 (0.51) MIN 0.200 (5.08) 0.140 (3.55) 0.020 (0.51) MIN 0.016 (0.41) 0.008 (0.20) 0.154 (3.90) 0.120 (3.05) 0.022 (0.56) 0.016 (0.41) 0.016 (0.40) 0.008 (0.20) 0.100 (2.54) TYP 0.022 (0.56) 0.016 (0.41) 15 MAX 0.300 (7.62) TYP 0.100 (2.54) TYP Lead Coplanarity : 0.004 (0.10) MAX Package Dimensions (0.4"Lead Spacing) 4 3 2 0.045 [1.14] 0.315 (8.00) MIN 0.405 (10.30) MIN Recommended Pad Layout for Surface Mount Leadform PIN 1 ID. 1 0.070 (1.78) 0.270 (6.86) 0.250 (6.35) 0.060 (1.52) 5 6 7 8 SEATING PLANE 0.390 (9.91) 0.370 (9.40) 0.100 (2.54) 0.295 (7.49) 0.070 (1.78) 0.045 (1.14) 0.415 (10.54) 0.030 (0.76) 0.004 (0.10) MIN 0.200 (5.08) 0.140 (3.55) 0.154 (3.90) 0.120 (3.05) 0.022 (0.56) 0.016 (0.41) 0.016 (0.40) 0.008 (0.20) 0.100 (2.54) TYP 0 to 15 0.400 (10.16) TYP NOTE All dimensions are in inches (millimeters) (c) 2003 Fairchild Semiconductor Corporation Page 5 of 8 7/18/03 8-PIN BI-DIRECTIONAL TRANSISTOR OPTOCOUPLER H11ADB6 H11ADB61 H11ADB62 ORDERING INFORMATION Option Description S Surface Mount Lead Bend SD Surface Mount; Tape and Reel SDV Surface Mount; Tape and Reel, VDE 0884 SV Surface Mount, VDE 0884 V VDE 0884 W 0.4" Lead Spacing WV 0.4" Lead Spacing; VDE 0884 MARKING INFORMATION 1 ADB6 2 V XX YY E 6 3 5 4 Definitions 1 Fairchild logo 2 Device number 3 VDE mark (Note: Only appears on parts ordered with VDE option - See order entry table) 4 Two digit year code, e.g., `03' 5 Two digit work week ranging from `01' to `53' 6 Assembly package code (c) 2003 Fairchild Semiconductor Corporation Page 6 of 8 7/18/03 8-PIN BI-DIRECTIONAL TRANSISTOR OPTOCOUPLER H11ADB6 H11ADB61 H11ADB62 Carrier Tape Specifications 12.0 0.1 4.0 0.1 4.90 0.20 4.0 0.1 0.30 0.05 O1.55 0.05 1.75 0.10 7.5 0.1 16.0 0.3 13.2 0.2 10.30 0.20 10.30 0.20 0.1 MAX O1.6 0.1 User Direction of Feed NOTE All dimensions are in inches (millimeters) Reflow Profile Temperature (C) 300 215C, 10-30 s 250 225 C peak 200 150 Time above 183C, 60-150 sec 100 50 Ramp up = 3C/sec * Peak reflow temperature: 225C (package surface temperature) * Time of temperature higher than 183C for 60-150 seconds * One time soldering reflow is recommended 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Time (Minute) (c) 2003 Fairchild Semiconductor Corporation Page 7 of 8 7/18/03 8-PIN BI-DIRECTIONAL TRANSISTOR OPTOCOUPLER H11ADB6 H11ADB61 H11ADB62 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. (c) 2003 Fairchild Semiconductor Corporation 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Page 8 of 8 7/18/03