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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDB8443 tm (R) N-Channel PowerTrench MOSFET 40 V, 182 A, 3.0 m Features Applications RDS(on) = 2.3 m ( Typ.)@ VGS = 10 V, ID = 80 A Power Tools QG(tot) = 142 nC ( Typ.) Motor drives and Uninterruptible Power Supplies Low Miller Charge, QGD = 32 nC( Typ.) Synchronous Rectification UIS Capability (Single Pulse and Repetitive Pulse) Battery Protection Circuit RoHS Compliant D G S D2-PAK (TO-263) MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol VDSS Drain to Source Voltage VGS ID Parameter Gate to Source Voltage - Continuous (TC = 25oC, Silicon Limited) Drain Current - Continuous (TC = 100oC, Silicon Limited) - Continuous (TC = 25oC, Package Limited) - Continuous (TA = 25oC, RJA = 43oC/W) IDM Drain Current EAS Single Pulse Avalanche Energy PD - Pulsed FDB8443 40 Unit V 20 V 182* 129* A 120 25 See Figure 4 (Note 1) 531 mJ Power Dissipation 188 W Derate above 25oC 1.25 W/oC TJ, TSTG Operating and Storage Temperature o -55 to +175 C *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A. Thermal Characteristics Symbol Parameter RJC Thermal Resistance Junction to Case, Max. RJA Thermal Resistance Junction to Ambient, Max. RJA FDB8443 (Note 2) 2 Thermal Resistance Junction to Ambient TO-263, 1in copper pad area, Max. (c)2010 Fairchild Semiconductor Corporation FDB8443 Rev. C1 1 Unit 0.8 o C/W 62 o C/W 43 o C/W www.fairchildsemi.com FDB8443 N-Channel PowerTrench(R) MOSFET March 2013 Device Marking FDB8443 Device FDB8443 Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800 units Electrical Characteristics TC = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Unit V Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250A, VGS = 0V 40 - - - - 1 - - 250 VGS = 20V - - 100 nA VGS = VDS, ID = 250A 2 2.8 4 V ID = 80A, VGS= 10V - 2.3 3.0 ID = 80A, VGS= 10V, TJ = 175oC - 4.2 5.5 VDS = 25V, VGS = 0V, f = 1MHz - 9310 - pF - 800 - pF pF VDS = 32V, VGS = 0V TC = 150oC A On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance m Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 510 - RG Gate Resistance VGS = 0.5V, f = 1MHz - 0.9 - Qg(TOT) Total Gate Charge at 10V VGS = 0 to 10V - 142 185 nC VGS = 0 to 2V Qg(TH) Threshold Gate Charge Qgs Gate to Source Gate Charge Qgs2 Gate Charge Threshold to Plateau Qgd Gate to Drain "Miller" Charge VDD = 20V ID = 35A Ig = 1mA - 17.5 23 nC - 36 - nC - 18.8 - nC - 32 - nC ns Switching Characteristics (VGS = 10V) ton Turn-On Time - - 58 td(on) Turn-On Delay Time - 18.4 - ns tr Rise Time - 17.9 - ns td(off) Turn-Off Delay Time - 55 - ns tf Fall Time - 13.5 - ns toff Turn-Off Time - - 109 ns ISD = 35A - 0.8 1.25 ISD = 15A - 0.8 1.0 - 42 55 ns - 48 62 nC VDD = 20V, ID = 35A VGS = 10V, RGS = 2 Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 35A, dISD/dt = 100A/s V Notes: 1: Starting TJ = 25oC, L = 0.26mH, IAS = 64A. 2: Pulse width = 100s. (c)2010 Fairchild Semiconductor Corporation FDB8443 Rev. C1 2 www.fairchildsemi.com FDB8443 N-Channel PowerTrench(R) MOSFET Package Marking and Ordering Information VGS = 10V 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULIPLIER 200 1.2 0.8 0.6 0.4 150 100 CURRENT LIMITED BY PACKAGE 50 0.2 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 0 25 175 NORMALIZED THERMAL IMPEDANCE, ZJC 75 100 125 150 175 TC, CASE TEMPERATURE(oC) Figure 1. Normalized Power Dissipation vs Case Temperature 2 1 50 Figure 2. Maximum Continuous Drain Current vs Case Temperature DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC SINGLE PULSE 1E-3 -5 10 -4 -3 10 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 5000 5000 VGSV= 10V TRANSCONDUCTANCE TRANSCONDUCTANCE GS = 10V MAY LIMIT CURRENT MAY LIMIT CURRENT IN THIS REGION IN THIS REGION TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK IDM, PEAK CURRENT (A) IDM, PEAK CURRENT (A) 1000 1000 CURRENT AS FOLLOWS: 175 - TC I = I2 150 100 100 SINGLE PULSE SINGLE PULSE 1010 -5 1010-5 -4 1010-4 -3 -2 -1 1010-3 1010-2 1010-1 t, RECTANGULAR PULSE DURATION(s) t, RECTANGULAR PULSE DURATION(s) 0 10 1 1 10 10 Figure 4. Peak Current Capability (c)2010 Fairchild Semiconductor Corporation FDB8443 Rev. C1 3 www.fairchildsemi.com FDB8443 N-Channel PowerTrench(R) MOSFET Typical Characteristics 500 10us IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 1000 100us 100 100 10 LIMITED BY PACKAGE 1ms 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 0.1 1 10ms SINGLE PULSE TJ = MAX RATED o TC = 25 C DC 10 VDS, DRAIN TO SOURCE VOLTAGE (V) If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] STARTING TJ = 25oC 10 STARTING TJ = 150oC 1 0.01 100 0.1 1 10 100 1000 5000 tAV, TIME IN AVALANCHE (ms) NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 5. Forward Bias Safe Operating Area 200 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 10V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 160 Figure 6. Unclamped Inductive Switching Capability VDD = 5V 120 TJ = 175oC 80 TJ = 25oC TJ = -55oC 40 0 2.0 2.5 3.0 3.5 4.0 4.5 160 VGS = 5V VGS = 4.5V 120 80 40 0 5.0 VGS = 4V 0 VGS, GATE TO SOURCE VOLTAGE (V) Figure 7. Transfer Characteristics rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) ID = 80A PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 60 TJ = 25oC TJ = 175oC 40 20 0 3 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage (c)2010 Fairchild Semiconductor Corporation FDB8443 Rev. C1 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 Figure 8. Saturation Characteristics NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 80 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 2.0 1.8 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 1.6 1.4 1.2 1.0 0.8 0.6 -80 ID = 80A VGS = 10V -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature 4 www.fairchildsemi.com FDB8443 N-Channel PowerTrench(R) MOSFET Typical Characteristics 1.15 VGS = VDS ID = 250A 1.10 1.0 1.05 0.8 1.00 0.6 0.4 -80 0.95 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 0.90 -80 200 20000 Ciss 10000 Coss 1000 Crss f = 1MHz VGS = 0V 100 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 Figure 13. Capacitance vs Drain to Source Voltage (c)2010 Fairchild Semiconductor Corporation FDB8443 Rev. C1 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE(V) Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature CAPACITANCE (pF) ID = 250A NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 1.2 10 ID = 35A VDD = 15V 8 VDD = 20V 6 VDD = 25V 4 2 0 0 20 40 60 80 100 120 Qg, GATE CHARGE(nC) 140 160 Figure 14. Gate Charge vs Gate to Source Voltage 5 www.fairchildsemi.com FDB8443 N-Channel PowerTrench(R) MOSFET Typical Characteristics tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 (c)2010 Fairchild Semiconductor Corporation FDB8443 Rev. C1 6 www.fairchildsemi.com FDB8443 N-Channel PowerTrench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2CoolTM Sync-LockTM FPSTM (R) AccuPowerTM F-PFSTM (R)* (R) (R) (R) PowerTrench AX-CAP * FRFET SM Global Power Resource PowerXSTM BitSiCTM TinyBoostTM Programmable Active DroopTM Green BridgeTM Build it NowTM TinyBuckTM QFET(R) Green FPSTM CorePLUSTM TinyCalcTM QSTM Green FPSTM e-SeriesTM CorePOWERTM TinyLogic(R) Quiet SeriesTM GmaxTM CROSSVOLTTM TINYOPTOTM RapidConfigureTM GTOTM CTLTM TinyPowerTM IntelliMAXTM Current Transfer LogicTM TM TinyPWMTM (R) ISOPLANARTM DEUXPEED TinyWireTM Dual CoolTM Marking Small Speakers Sound Louder Saving our world, 1mW/W/kW at a timeTM TranSiC(R) EcoSPARK(R) SignalWiseTM and BetterTM TriFault DetectTM EfficentMaxTM SmartMaxTM MegaBuckTM TRUECURRENT(R)* ESBCTM SMART STARTTM MICROCOUPLERTM SerDesTM Solutions for Your SuccessTM MicroFETTM (R) SPM(R) MicroPakTM STEALTHTM MicroPak2TM Fairchild(R) UHC(R) SuperFET(R) MillerDriveTM Fairchild Semiconductor(R) Ultra FRFETTM SuperSOTTM-3 MotionMaxTM FACT Quiet SeriesTM UniFETTM SuperSOTTM-6 mWSaverTM FACT(R) VCXTM SuperSOTTM-8 OptoHiTTM FAST(R) VisualMaxTM SupreMOS(R) OPTOLOGIC(R) FastvCoreTM VoltagePlusTM OPTOPLANAR(R) SyncFETTM FETBenchTM XSTM ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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