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tm
March 2013
FDB8443 N-Channel PowerTrench® MOSFET
©2010 Fairchild Semiconductor Corporation
FDB8443 Rev. C1
www.fairchildsemi.com1
FDB8443
N-Channel PowerTrench® MOSFET
40 V, 182 A, 3.0 mΩ
Features
RDS(on) = 2.3 mΩ ( Typ.)@ VGS = 10 V, ID = 80 A
QG(tot) = 142 nC ( Typ.)
Low Miller Charge, QGD = 32 nC( Typ.)
UIS Capability (Single Pulse and Repetitive Pulse)
RoHS Compliant
Applications
Power Tools
Motor drives and Uninterruptible Power Supplies
Synchronous Rectification
Battery Protection Circuit
D2-PAK
(TO-263)
G
S
D
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol Parameter FDB8443 Unit
VDSS Drain to Source Voltage 40 V
VGS Gate to Source Voltage ±20 V
IDDrain Current
- Continuous (TC = 25oC, Silicon Limited) 182*
A
- Continuous (TC = 100oC, Silicon Limited) 129*
- Continuous (TC = 25oC, Package Limited) 120
- Continuous (TA = 25oC, RθJA = 43oC/W) 25
IDM Drain Current - Pulsed See Figure 4
EAS Single Pulse Avalanche Energy (Note 1) 531 mJ
PD
Power Dissipation 188 W
Derate above 25oC1.25W/
oC
TJ, TSTG Operating and Storage Temperature -55 to +175 oC
Symbol Parameter FDB8443 Unit
RθJC Thermal Resistance Junction to Case, Max. 0.8 oC/W
RθJA Thermal Resistance Junction to Ambient, Max. (Note 2) 62 oC/W
RθJA Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area, Max. 43 oC/W
FDB8443 N-Channel PowerTrench® MOSFET
www.fairchildsemi.com2©2010 Fairchild Semiconductor Corporation
FDB8443 Rev. C1
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDB8443 FDB8443 TO-263AB 330mm 24mm 800 units
Electrical Characteristics TC = 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Symbol Parameter Test Conditions Min Typ Max Unit
BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V 40 - - V
IDSS Zero Gate Voltage Drain Current VDS = 32V, - - 1 μA
VGS = 0V TC = 150oC - - 250
IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250μA22.84V
rDS(on) Drain to Source On Resistance
ID = 80A, VGS= 10V - 2.3 3.0
mΩ
ID = 80A, VGS= 10V,
TJ = 175oC-4.25.5
Ciss Input Capacitance VDS = 25V, VGS = 0V,
f = 1MHz
- 9310 - pF
Coss Output Capacitance - 800 - pF
Crss Reverse Transfer Capacitance - 510 - pF
RGGate Resistance VGS = 0.5V, f = 1MHz - 0.9 - Ω
Qg(TOT) Total Gate Charge at 10V VGS = 0 to 10V
VDD = 20V
ID = 35A
Ig = 1mA
- 142 185 nC
Qg(TH) Threshold Gate Charge VGS = 0 to 2V - 17.5 23 nC
Qgs Gate to Source Gate Charge -36-nC
Qgs2 Gate Charge Threshold to Plateau - 18.8 - nC
Qgd Gate to Drain “Miller“ Charge - 32 - nC
Switching Characteristics (VGS = 10V)
Drain-Source Diode Characteristics
Notes:
1: Starting TJ = 25oC, L = 0.26mH, IAS = 64A.
2: Pulse width = 100s.
ton Turn-On Time
VDD = 20V, ID = 35A
VGS = 10V, RGS = 2Ω
- - 58 ns
td(on) Turn-On Delay Time - 18.4 - ns
trRise Time - 17.9 - ns
td(off) Turn-Off Delay Time - 55 - ns
tfFall Time - 13.5 - ns
toff Turn-Off Time - - 109 ns
VSD Source to Drain Diode Voltage ISD = 35A - 0.8 1.25 V
ISD = 15A - 0.8 1.0
trr Reverse Recovery Time ISD = 35A, dISD/dt = 100A/μs-4255ns
Qrr Reverse Recovery Charge - 48 62 nC
FDB8443 N-Channel PowerTrench® MOSFET
www.fairchildsemi.com3©2010 Fairchild Semiconductor Corporation
FDB8443 Rev. C1
Typical Characteristics
Figure 1. Normalized Power Dissipation vs Case
Temperature
0 25 50 75 100 125 150 175
0.0
0.2
0.4
0.6
0.8
1.0
1.2
POWER DISSIPATION MULIPLIER
TC, CASE TEMPERATURE(oC)
Figure 2.
25 50 75 100 125 150 175
0
50
100
150
200
TC, CASE TEMPERATURE(oC)
ID, DRAIN CURRENT (A)
VGS = 10V
CURRENT LIMITED
BY PACKAGE
Maximum Continuous Drain Current vs
Case Temperature
Figure 3.
10-5 10-4 10-3 10-2 10-1 100101
1E-3
0.01
0.1
1
SINGLE PULSE
D = 0.50
0.20
0.10
0.05
0.02
0.01
NORMALIZED THERMAL
IMPEDANCE, ZθJC
t, RECTANGULAR PULSE DURATION(s)
DUTY CYCLE - DESCENDING ORDER
2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
PDM
t1
t2
Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
10-5 10-4 10-3 10-2 10-1 100101
10
100
1000
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
VGS = 10V
SINGLE PULSE
IDM, PEAK CURRENT (A)
t, RECTANGULAR PULSE DURATION(s)
5000
10-5 10-4 10-3 10-2 10-1 110
10
100
1000
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
VGS = 10V
SINGLE PULSE
IDM, PEAK CURRENT (A)
t, RECTANGULAR PULSE DURATION(s)
5000
T
C
= 25
o
C
I = I
2
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
FDB8443 N-Channel PowerTrench® MOSFET
www.fairchildsemi.com4©2010 Fairchild Semiconductor Corporation
FDB8443 Rev. C1
Figure 5.
1 10 100
0.1
1
10
100
1000
LIMITED
BY PACKAGE
10us
100us
1ms
10ms
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
TC = 25oC DC
Forward Bias Safe Operating Area
0.01 0.1 1 10 100 1000
1
10
100
5000
STARTING TJ = 150oC
STARTING TJ = 25oC
IAS, AVALANCHE CURRENT (A)
tAV, TIME IN AVALANCHE (ms)
500
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 7.
2.02.53.03.54.04.55.0
0
40
80
120
160
TJ = -55oC
TJ = 25oC
TJ = 175oC
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
VDD = 5V
ID, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
Transfer Characteristics Figure 8.
012345
0
40
80
120
160
200
VGS = 5V
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS = 4V
VGS = 4.5V
VGS = 10V PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
Saturation Characteristics
Figure 9.
345678910
0
20
40
60
80
rDS(on), DRAIN TO SOURCE
ON-RESISTANCE (mΩ)
VGS, GATE TO SOURCE VOLTAGE (V)
ID = 80A
TJ = 25oC
TJ = 175oC
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
Drain to Source On-Resistance
Variation vs Gate to Source Voltage
Figure 10.
-80 -40 0 40 80 120 160 200
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
ID = 80A
VGS = 10V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
TJ, JUNCTION TEMPERATURE(oC)
Normalized Drain to Source On
Resistance vs Junction Temperature
Typical Characteristics
FDB8443 N-Channel PowerTrench® MOSFET
www.fairchildsemi.com5©2010 Fairchild Semiconductor Corporation
FDB8443 Rev. C1
Figure 11.
-80 -40 0 40 80 120 160 200
0.4
0.6
0.8
1.0
1.2
VGS = VDS
ID = 250μA
NORMALIZED GATE
THRESHOLD VOLTAGE
TJ, JUNCTION TEMPERATURE(oC)
Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
-80 -40 0 40 80 120 160 200
0.90
0.95
1.00
1.05
1.10
1.15
ID = 250μA
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
TJ, JUNCTION TEMPERATURE (oC)
Figure 13.
0.1 1 10
100
1000
10000
20000
f = 1MHz
VGS = 0V
Crss
Coss
Ciss
VDS, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
50
Capacitance vs Drain to Source
Voltage
Figure 14.
0 20 40 60 80 100 120 140 160
0
2
4
6
8
10
ID = 35A
VDD = 25V
VDD = 20V
VGS, GATE TO SOURCE VOLTAGE(V)
Qg, GATE CHARGE(nC)
VDD = 15V
Gate Charge vs Gate to Source Voltage
Typical Characteristics
www.fairchildsemi.com
6
FDB8443 N-Channel PowerTrench® MOSFET
©2010 Fairchild Semiconductor Corporation
FDB8443 Rev. C1
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