C3D16065D1 VRRM Silicon Carbide Schottky Diode IF (TC=147C) Z-Rec Rectifier (R) Qc Features * * * * * * * 650 V = 16 A = 40 nC Package 650 Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF TO-247-3 Benefits * * * * * = Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Applications * * * * Switch Mode Power Supplies (SMPS) Boost diodes in PFC or DC/DC stages Free Wheeling Diodes in Inverter stages AC/DC converters Part Number Package Marking C3D16065D1 TO-247-3 C3D16065D1 Maximum Ratings (TC=25C unless otherwise specified) Symbol Parameter Test Conditions Note VRRM Repetitive Peak Reverse Voltage 650 V VDC DC Blocking Voltage 650 V Continuous Forward Current 43 20 16 A TC=25C TC=135C TC=147C IFRM Repetitive Peak Forward Surge Current 57 33 A TC=25C, tP=10 ms, Half Sine Pulse TC-110C, tP=10 ms, Half Sine Pulse IFSM Non-Repetitive Peak Forward Surge Current 160 148 A TC=25C, tP=10 ms, Half Sine Pulse TC=110C, tP=10 ms, Half Sine Pulse Fig. 8 Ptot Power Dissipation 173 75 W TC=25C TC=110C Fig. 4 i2dt i2t value 128 110 A2s -55 to +175 C 1 8.8 Nm lbf-in IF TJ , Tstg Operating Junction and Storage Temperature TO-220 Mounting Torque 1 Value C3D16065D1 Rev. -, 08-2019 TC=25C, tP=10 ms TC=110C, tP=10 ms M3 Screw 6-32 Screw Fig. 3 Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note VF Forward Voltage 1.5 2.0 1.8 2.4 V IF = 16 A TJ=25C IF = 16 A TJ=175C Fig. 1 IR Reverse Current 18 38 95 378 A VR = 650 V TJ=25C VR = 650 V TJ=175C Fig. 2 QC Total Capacitive Charge 40 nC VR = 400 V, IF = 16 A TJ = 25C Fig. 5 C Total Capacitance 740 74 68 pF VR = 0 V, TJ = 25C, f = 1 MHz VR = 200 V, TJ = 25C, f = 1 MHz VR = 400 V, TJ = 25C, f = 1 MHz Fig. 6 EC Capacitance Stored Energy 6 J VR = 400 V Fig. 7 Note:This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol RJC Parameter Thermal Resistance from Junction to Case Typ. Unit Note 0.86 C/W Fig. 9 Typical Performance 400 45 30 F 20 15 10 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 FowardVVoltage, VF F(V) (V) VF (V) Figure 1. Forward Characteristics 2 300 250 TJ = 175 C IRR (A) 25 F Foward Current, I (A) I (A) IF (A) 35 350 TJ = -55C TJ = 25C TJ = 75C TJ = 125C TJ = 175C Reverse Leakage Current, I (A) IRR (uA) 40 C3D16065D1 Rev. -, 08-2019 200 TJ = 125 C 150 TJ = 75 C 100 TJ = 25 C TJ = -55 C 50 0 0 200 400 600 800 (V) VR (V) ReverseVVoltage, R Figure 2. Reverse Characteristics 1000 1200 Typical Performance 180 140 10% Duty 20% Duty 30% Duty 50% Duty 70% Duty DC 120 140 120 (W) PP (W) PTOT (W) Tot Tot IF(peak) (A) IF (A) 100 160 80 100 60 60 40 40 20 0 80 20 25 50 75 100 TCC (C) T C 125 150 0 175 25 Figure 3. Current Derating 70 150 175 Conditions: TJ = 25 C Ftest = 1 MHz Vtest = 25 mV 600 Capacitance C (pF)(pF) 40 C Capacitive Q Charge, (nC) QC (nC) TT C TCCCC (C) 125 700 30 20 500 400 300 200 10 100 0 100 200 300 400 500 Reverse VRVoltage, (V) VR (V) 600 700 Figure 5. Total Capacitance Charge vs. Reverse Voltage 3 100 800 50 0 75 Figure 4. Power Derating Conditions: TJ = 25 C 60 50 C3D16065D1 Rev. -, 08-2019 0 0 1 10 ReverseVVoltage, (V) VR (V) R 100 Figure 6. Capacitance vs. Reverse Voltage 1000 Typical Performance 16 TJ_initial = 25 C TJ_initial = 110 C 1,000 14 Capacitance StoredEEnergy, (mJ) EC (mJ) C 12 IIFSM (A) (A) 10 FSM 8 100 6 4 2 0 0 100 200 300 400 500 Reverse VRVoltage, (V) VR (V) 600 700 100E-6 0.5 0.3 100E-3 0.1 0.05 0.02 10E-3 0.01 SinglePulse 1E-6 10E-6 100E-6 1E-3 Time, tp (s) T (Sec) 10E-3 Figure 9. Transient Thermal Impedance C3D16065D1 Rev. -, 08-2019 10E-3 Figure 8. Non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) 1 1E-3 4 1E-3 tp (s) Time, tp (s) Figure 7. Capacitance Stored Energy Junction To Case Impedance, ZthJC (oC/W) Thermal Resistance (C/W) 10 10E-6 100E-3 1 Package Dimensions ASE Advanced Package TO-247-3 Semiconductor Engineering Weihai, Inc. PACKAGE OUTLINE DWG NO. 98WHP03165A ISSUE O DATE Sep.05, 2016 e POS Inches Min Millimeters Max A .190 .205 4.83 5.21 .090 .100 2.29 2.54 A2 .075 .085 1.91 2.16 b .042 .052 1.07 1.33 b1 .075 .095 1.91 2.41 b3 .113 .133 2.87 3.38 c .022 .027 0.55 0.68 D .819 .831 20.80 21.10 D1 .640 .695 16.25 17.65 D2 .037 .049 0.95 1.25 E .620 .635 15.75 16.13 E1 .516 .557 13.10 14.15 E2 .145 .201 3.68 5.10 E3 .039 .075 1.00 1.90 E4 .487 .529 12.38 13.43 .214 BSC 5.44 BSC L .780 .800 L1 .161 .173 N OP 1 - GATE 2 - DRAIN (COLLECTOR) 3 - SOURCE (EMITTER) 4 - DRAIN (COLLECTOR) TITLE: TO-247 3LD, Only For Cree COMPANY ASE Weihai SHEET 1 OF 3 Recommended Solder Pad Layout 19.81 20.32 4.10 4.40 3.51 3.65 3 .138 .144 Q .216 .236 5.49 6.00 S .238 .248 6.04 6.30 T 17.5 REF W 3.5 REF X 4 REF Part Number Package Marking C3D16065D1 TO-247-3 C3D16065D1 all units are in inches TO-247-3 Note: Recommended soldering profiles can be found in the applications note here: http://www.wolfspeed.com/power_app_notes/soldering 5 C3D16065D1 Rev. -, 08-2019 Max A1 e NOTE ; 1. ALL METAL SURFACES: TIN PLATED,EXCEPT AREA OF CUT 2. DIMENSIONING & TOLERANCEING CONFIRM TO ASME Y14.5M-1994. 3. ALL DIMENSIONS ARE IN MILLIMETERS. ANGLES ARE IN DEGREES. 4. THIS DRAWING WILL MEET ALL DIMENSIONS REQUIREMENT OF JEDEC outlines TO-247 AD. Min Diode Model Diode Model CSD04060 Vf T = VT + If*RT VT= 0.965 + (Tj * -1.3*10-3) RT= 0.096 + (Tj * 1.06*10-3) VfT = VT + If * RT VT = 0.97 + (TJ * -1.0*10-3) RT = 0.024 + (TJ * 3.0*10-4) VT RT Note: Tj = Diode Junction Temperature In Degrees Celsius, valid from 25C to 175C Notes * RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfpseed representative or from the Product Ecology section of our website at http://www.wolfspeed.com/Power/Tools-and-Support/Product-Ecology. * REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. * This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Related Links * * * Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2 SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i Copyright (c) 2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 6 C3D16065D1 Rev.-, 08-2019 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power