1C3D16065D1 Rev. -, 08-2019
C3D16065D1
Silicon Carbide Schottky Diode
Z-Rec®
Features
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Benets
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Applications
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Package
Maximum Ratings
Symbol Parameter Value Test Conditions Note
V
650 V
V
650 V
16
A
T
T
T
AT
P
T
P
160
AT
P
T
P
P
tot
T
T
i
110
ATP
TP
T
J
1
Part Number Package Marking
VRRM = 650 V
IF (TC=147˚C) = 16 A
Qc
2C3D16065D1 Rev. -, 08-2019
Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
V
V = 16 A TJ
= 16 A TJ
R
95
VR = 650 V TJ
VR = 650 V TJ
Q VR = 16 A
TJ
VRJ
VRJ
VRJ
E 6 VR
Thermal Characteristics
Symbol Parameter Typ. Unit Note
Rθ
Typical Performance
IF (A)
VF (V) VR (V)
IR (μA)
0
5
10
15
20
25
30
35
40
45
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Foward Current, IF(A)
Foward Voltage, VF(V)
TJ= -55°C
TJ= 25°C
TJ= 75°C
TJ= 175°C
TJ= 125°C
IF (A)
VF (V)
0
50
100
150
200
250
300
350
400
0200 400 600 800 1000 1200
Reverse Leakage Current, IRR (uA)
Reverse Voltage, VR(V)
TJ= 175 °C
TJ= 125 °C
TJ= 75 °C
TJ= -55 °C
TJ= 25 °C
VR (V)
IR (μA)
3C3D16065D1 Rev. -, 08-2019
Figure 3. Current Derating Figure 4. Power Derating
Figure 5. Total Capacitance Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage
Typical Performance
TC ˚C
PTot (W)
0
20
40
60
80
100
120
140
25 50 75 100 125 150 175
I
F
(A)
T
C
(°C)
10% Duty
20% Duty
30% Duty
50% Duty
70% Duty
DC
IF(peak) (A)
TC ˚C
0
20
40
60
80
100
120
140
160
180
25 50 75 100 125 150 175
P
TOT
(W)
TC(°C)
PTot (W)
TC ˚C
0
10
20
30
40
50
60
70
0100 200 300 400 500 600 700
Capacitive Charge, Q
C
(nC)
Reverse Voltage, VR(V)
Conditions:
T
J
= 25 °C
QC (nC)
VR (V)
0
100
200
300
400
500
600
700
800
0 1 10 100 1000
Capacitance (pF)
Reverse Voltage, V
R
(V)
Conditions:
TJ= 25 °C
Ftest = 1 MHz
Vtest = 25 mV
C (pF)
VR (V)
4C3D16065D1 Rev. -, 08-2019
Typical Performance
Figure 7. Capacitance Stored Energy Figure 8. Non-repetitive peak forward surge current
versus pulse duration (sinusoidal waveform)
Figure 9. Transient Thermal Impedance
0
2
4
6
8
10
12
14
16
0100 200 300 400 500 600 700
Capacitance Stored Energy, E
C
(mJ)
Reverse Voltage, V
R
(V)
EC(mJ)
VR (V)
1E-3
10E-3
100E-3
1
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1
Junction To Case Impedance, Z
thJC
(
o
C/W)
Time, t
p
(s)
0.5
0.3
0.1
0.05
0.02
0.01
SinglePulse
Thermal Resistance (˚C/W)
T (Sec)
10
100
1,000
10E-6 100E-6 1E-3 10E-3
I
FSM
(A)
Time, tp(s)
T
J_initial
= 25 °C
T
J_initial
= 110 °C
tp (s)
IFSM (A)
5C3D16065D1 Rev. -, 08-2019
Package Dimensions
Package TO-247-3
NOTE ;
1. ALL METAL SURFACES: TIN PLATED,EXCEPT AREA OF CUT
2. DIMENSIONING & TOLERANCEING CONFIRM TO
ASME Y14.5M-1994.
3. ALL DIMENSIONS ARE IN MILLIMETERS.
ANGLES ARE IN DEGREES.
4. THIS DRAWING WILL MEET ALL DIMENSIONS REQUIREMENT
OF JEDEC outlines TO-247 AD.
1 - GATE
2 - DRAIN (COLLECTOR)
3 - SOURCE (EMITTER)
4 - DRAIN (COLLECTOR)
TITLE:
SHEET
COMPANY ASE Weihai
1 OF 3
ASE Advanced
Semiconductor
Engineering Weihai, Inc.
PACKAGE
OUTLINE ISSUE
DATE
DWG NO. 98WHP03165A
O
Sep.05, 2016
TO-247 3LD, Only For Cree
Recommended Solder Pad Layout
TO-247-3
POS Inches Millimeters
Min Max Min Max
A .190 .205 4.83 5.21
A1 .090 .100 2.29 2.54
A2 .075 .085 1.91 2.16
b .042 .052 1.07 1.33
b1 .075 .095 1.91 2.41
b3 .113 .133 2.87 3.38
c .022 .027 0.55 0.68
D .819 .831 20.80 21.10
D1 .640 .695 16.25 17.65
D2 .037 .049 0.95 1.25
E .620 .635 15.75 16.13
E1 .516 .557 13.10 14.15
E2 .145 .201 3.68 5.10
E3 .039 .075 1.00 1.90
E4 .487 .529 12.38 13.43
e.214 BSC 5.44 BSC
L .780 .800 19.81 20.32
L1 .161 .173 4.10 4.40
N 3
ØP .138 .144 3.51 3.65
Q .216 .236 5.49 6.00
S .238 .248 6.04 6.30
T 17.5° REF
W3.5° REF
X 4° REF
e
all units are in inches
Part Number Package Marking
C3D16065D1 TO-247-3 C3D16065D1
Note: Recommended soldering proles can be found in the applications note here:
http://www.wolfspeed.com/power_app_notes/soldering
66 C3D16065D1 Rev.-, 08-2019
Copyright © 2019 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
• RoHS Compliance
• REACh Compliance
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Notes
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Related Links
Diode Model
VT
RT
Diode Model CSD04060
Vf T = VT + If*RT
VT= 0.965 + (Tj * -1.3*10-3)
RT= 0.096 + (Tj * 1.06*10-3)
Note: Tj = Diode Junction Temperature In Degrees Celsius,
valid from 25°C to 175°C
T = VT T
VT J
RT J
