Jan. 2000
Unit: Ω
The seven circuits share the COM and GND.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
INPUT
OUTPUT
GND
2.7k
10k
COM
16P4(P)
16P2N-A(FP)
16P2S-A(GP)
16P2Z-A(KP)
Package type
IN7→
710
IN5→
512
INPUT OUTPUT
IN4→
413
INz3
→
3
IN2→
215
1
IN1→
16
GND →COM COMMOM
9
8
IN6→
611
→O1
→O2
→O3
→O4
→O5
→O6
→O7
14
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63813P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
PIN CONFIGURATION
DESCRIPTION
M63813P/FP/GP/KP are seven-circuit Single transistor ar-
rays with clamping diodes. The circuits are made of NPN
transistors. Both the semiconductor integrated circuits per-
form high-current driving with extremely low input-current
supply.
FEATURES
●Four package configurations (P, FP, GP and KP)
●Medium breakdown voltage (BVCEO ≥ 35V)
●Synchronizing current (IC(max) = 300mA)
●With clamping diodes
●Low output saturation voltage
●Wide operating temperature range (Ta = –40 to +85°C)
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
FUNCTION
The M63813P/FP/GP/KP each have seven circuits consist-
ing of NPN transistor. A spike-killer clamping diode is pro-
vided between each output pin (collector) and COM pin
(pin9). The transistor emitters are all connected to the GND
pin (pin 8). The transistors allow synchronous flow of 300mA
collector current. A maximum of 35V voltage can be applied
between the collector and emitter.
CIRCUIT DIAGRAM
V
mA
V
mA
V
W
°C
°C
–0.5 ~ +35
300
–0.5 ~ +35
300
35
1.47
1.00
0.80
0.78
–40 ~ +85
–55 ~ +125
RatingsSymbol Parameter Conditions Unit
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)
Output, H
Current per circuit output, L
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
Ta = 25°C, when mounted
on board
M63813P
M63813FP
M63813GP
M63813KP
POWEREX
Jan. 2000
ton toff
50%
50%
50%50%
INPUT
OUTPUT
(1)Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω, V
IH
= 3V
(2)Input-output conditions : R
L
= 220Ω, Vo = 35V
(3)Electrostatic capacity C
L
includes floating capacitance at
connections and input capacitance at probes
PG
50Ω
R
L
OUTPUT
INPUT Vo
C
L
OPEN
Measured device
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63813P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
Duty Cycle no more than 45%
Duty Cycle no more than 100%
Duty Cycle no more than 30%
Duty Cycle no more than 100%
Duty Cycle no more than 24%
Duty Cycle no more than 100%
Duty Cycle no more than 24%
Duty Cycle no more than 100%
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85 °C)
V
(BR) CEO
VIN(on)
VF
IR
hFE
V
V
V
µA
—
35
—
—
2.4
—
—
50
—
—
—
35
1.2
—
—
—
0.2
0.8
4.2
2.0
10
—
Symbol UnitParameter Test conditions Limits
min typ max
V
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
Collector-emitter breakdown voltage
“On” input voltage
Clamping diode forward volltage
Clamping diode reverse current
DC amplification factor
ICEO = 10µA
IIN = 1mA, IC = 10mA
IIN = 2mA, IC = 150mA
IIN = 1mA, IC = 10mA
IF = 250mA
VR = 35V
VCE = 10V, IC = 10mA
VCE(sat)
Collector-emitter saturation voltage
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
VOV0
0
0
0
0
0
0
0
0
0
—
—
—
—
—
—
—
—
—
—
35
250
160
250
130
250
120
250
120
20
Symbol UnitParameter Test conditions Limits
min typ max
Output voltage
mA
V
IC
VIN Input voltage
Collector current
(Current per 1 cir-
cuit when 7 circuits
are coming on si-
multaneously)
M63813P
M63813FP
M63813GP
M63813KP
ns
ns
—
—125
250 —
—
Symbol UnitParameter Test conditions Limits
min typ max
Turn-on time
Turn-off time
ton
toff CL = 15pF (note 1)
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
POWEREX
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63813P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
400
300
200
100
00100
20 40 60 80
1~3
4
5
6
7
Thermal Derating Factor Characteristics
Ambient temperature Ta (°C)
Power dissipation Pd (W)
Input Characteristics
Input voltage V
I
(V)
Input current I
I
(mA)
Duty Cycle-Collector Characteristics
(M63813P)
Duty cycle (%)
Collector current Ic (mA)
Duty Cycle-Collector Characteristics
(M63813P)
Duty cycle (%)
Collector current Ic (mA)
Duty Cycle-Collector Characteristics
(M63813FP)
Duty cycle (%)
Collector current Ic (mA)
Duty Cycle-Collector Characteristics
(M63813FP)
Duty cycle (%)
Collector current Ic (mA)
2.0
1.5
1.0
0.5
00 25 50 75 10085
0100
20 40 60 80
400
300
200
100
0
5
6
7
1~4
400
300
200
100
00100
20 40 60 80
1~2
3
4
5
6
7
400
300
200
100
00100
20 40 60 80
1
2
3
4
5
6
7
0.744
0.520
0.418
0.406
M63813P
M63813FP
M63813GP
M63813KP
8
6
4
2
002015105
Ta = 85°C
Ta = 25°C
Ta = –40°C
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 25°C
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 85°C
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 25°C
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 85°C
POWEREX
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63813P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
Duty Cycle-Collector Characteristics
(M63813GP/KP)
Duty cycle (%)
Collector current Ic (mA)
Duty Cycle-Collector Characteristics
(M63813GP/KP)
Duty cycle (%)
Collector current Ic (mA)
Output Saturation Voltage
Collector Current Characteristics
Output saturation voltage V
CE(sat)
(V)
Collector current Ic (mA)
Output Saturation Voltage
Collector Current Characteristics
Output saturation voltage V
CE(sat)
(V)
Collector current Ic (mA)
Output Saturation Voltage
Collector Current Characteristics
Output saturation voltage V
CE(sat)
(V)
Collector current Ic (mA)
DC Amplification Factor
Collector Current Characteristics
Collector current Ic (mA)
DC amplification factor h
FE
400
300
200
100
00100
20 40 60 80
1~2
4
5
6
7
3
400
300
200
100
00100
20 40 60 80
1
2
3
4
56
7
250
200
150
100
50
00 0.2 0.4 0.6 0.8
100
80
60
40
20
00 0.05 0.10 0.15 0.20
100
80
60
40
20
00 0.05 0.10 0.15 0.20 10
0
10
1
10
2
10
1
10
2
10
3
2357 23 57
2
3
5
7
2
3
5
7
10
3
23 57
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 25°C
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 85°C
I
B
= 3mA
Ta = 25°CI
B
= 2mA
I
B
= 1.5mA
I
B
= 1mA
I
B
= 0.5mA
Ta = 25°CV
I
= 7V
V
I
= 6V V
I
= 5V
V
I
= 4V
V
I
= 3V
V
I
= 2V
I
I
= 2mA
Ta = –40°CTa = 25°C
Ta = 85°C
V
CE
10V
Ta = 25°C
POWEREX
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63813P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
Grounded Emitter Transfer Characteristics
Input voltage V
I
(V)
Collector current Ic (mA)
Grounded Emitter Transfer Characteristics
Input voltage V
I
(V)
Collector current Ic (mA)
Clamping Diode Characteristics
Forward bias voltage V
F
(V)
Forward bisa current I
F
(mA)
50
40
30
20
10
0
250
200
150
100
50
0
250
200
150
100
50
00 0.4 0.8 1.2 1.6 2.0
0 0.4 0.8 1.2 1.6 2.0
Ta = 25°C
Ta = 85°CTa = –40°C
012345
V
CE
= 4V
Ta = 85°C
Ta = 25°C
Ta = –40°C
Ta = 85°C
Ta = 25°CTa = –40°C
V
CE
= 4V
POWEREX
