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MS3023
DESCRIPTION:DESCRIPTION:
The MS3023 is a common base, hermetically sealed silicon NPN
microwave power transistor. This device is designed for Class C
applications in the 1 - 2 GHz frequency range. Gold metalization
and emitter ballasting provide long-term reliability and superior
ruggedness.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)C)
21.8
VCC Collector-Supply Voltage* 35 V
IC Device Current* 600 mA
TJ Junction Temperature 200
TSTG Storage Temperature -65 to +200
THERMAL DATATHERMAL DATA
RTH(J-C)
Thermal Resistance Junction-case
8.0 °°C/W
**Applies only to rated RF amplifier operation
FeaturesFeatures
• GOLD METALIZATION
• Pout = 3.0 W MINIMUM
• 2.0 GHz
• Gp = 7.8 dB
• INFINITE VSWR CAPABLE @ RATED CONDITIONS
• HERMETIC PACKAGE
• COMMON BASE CONFIGURATION
RF & MICROWAVE TRANSISTORS
GENERAL PURPOSE AMPLIFIER
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855