NEW NEW VEW NEW iEW IEW iEW V(BR)DSS| "DS(on) @ Ip Us) Pp* V(BR)DSS| "DS(on) @ |p Ip Pp* (Volts) | (Ohms) (Amps) (cont) | (Watts) (Volts) | (Ohms) (Amps) (cont) | (Watts) Min Max Device Amps | Max Min Max Device Amps | Max 200 0.7 4 MTH8P20 8 125 80 0.15 10 MTH20P08 20 125 180 MTH8P18 60 0.14 12.5 | MTH25P06 25 100 0.15 10 MTH20P10 20 50 MTH25P05 * (a 25C Shaded devices are preferred devices and are recommended for new designs. Table 7 N-Channel V(BR)DSS| 'DS(on) @ Ip Ip Pp* V(ar)oss rps(on) @ Ip Ip Pp* (Volts) | (Ohms) (Amps) (cont) | (Watts) (Volts) | (Ohms) (Amps) (cont) | (Watts) Min Max Device Amps | Max Min Max Device Amps | Max 1000 2 3 MTH6N100 6 150 350 0.55 4 MTH8N35 8 150 3 25 MTH5N100 5 0.3 75 MTH15N35 15 950 MTH5N95 NEW 250 0.14 15 MTH30N25 20 125 900 1.8 MTH8N90 8 170 200 0.16 7.5 MTH15N20 15 150 3 3 MTH6N90 150 0.08 15 MTH30N20 30 850 MTH6N85 150 0.12 10 MTH20N15 20 800 1.5 3.8 BUZ355 125 0.06 17.5 |MTH35N15 35 600 1.2 3 MTH6EN60 150 100 0.07 12.5 | MTH25N10 25 0.5 4 MTH8N60 8 0.04 20 MTH40N10 40 550 1.2 3 MTH6N55 6 80 0.07 12.5 | MTH25NO08 25 0.5 4 MTH8N55 8 0.04 20 MTH40N08 40 500 0.8 3.5 MTH7N50 7 60 0.055 17.5 | MTH35NO6 35 0.6 6 BUZ330 9.5 125 MTH35NO6E 0.4 7 MTH13N50 13 150 0.028 20 MTH40N06 40 450 0.8 3.5 MTH7N45 7 50 0.055 17.5 | MTH35N05 35 0.4 7 MTH13N45 13 0.028 20 MTH40N05 40 400 0.55 4 MTH8N40 8 NEW 25 MTHS50NO5E 50 125 0.3 7.5 MTH15N40 15 *@ 25C Bold Type indicates new product. Shaded devices are preferred devices and are recommended for new designs. \ Table 8 N- and P-Channel Isolated TO-218 iN V(BR)DSS/ DS(on) @ Ip Ip Pp" (Volts) |(Ohms) (Amps) (cont) | (Watts) Min Max Device Amps | Max G 500 0.4 7 MTG9N50E 9 70 D CASE 340B-03 S ISOLATED TO-218 200 0.08 15 MTG20N20 20 100 0.15 10 MTG15P10** 15 "To = 25C * Indicates P-Channel Bold Type indicates new product. Ve TMOS Table 6 P-Channel TMOS Power MOSFETs Plastic Packages TO-218AC TO-218AC CASE 340-01 SWITCHMODE DESIGNERS GUIDE MOTOROLA 31