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Is Now Part of
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, afliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Afrmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
©2003 Fairchild Semiconductor Corporation Rev. A, July 2003
J270
Absolute Maximum Ratings* Ta=25°C unless otherwise noted
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics Ta=25°C unless otherwise noted
Thermal Charac teris tics TA=25°C unless otherwise noted
Symbol Parameter Ratings Units
VDG Drain-Gate Voltage -30 V
VGS Gate-Source Voltage 30 V
IGF Forward Gate Current 50 mA
TJ, TSTG Operating and Storage Junction Temperat ure Range -55 ~ 150 °C
Symbol Paramet e r Test Condition Min. Max. Units
Off Characteristics
V(BR)GSS Gate-Source Breakdwon Voltage IG = -1 .0µA, VDS = 0 30 V
IGSS Gate Reverse Current VGS = -20V, VDS = 0 200 pA
VGS(off) Gate-Source Cutoff Voltage VDS = -15V, ID = 1.0nA 0.5 2.0 V
On Characteristics
IDSS Zero-Gate Voltage Drain Current * VDS = -1 5V, VGS = 0 -2.0 -15 mA
Small Signal Characteristics
gfs Forward Transferconductance VGS = 0V, VDS = 15V, f = 1.0kHz 6000 15000 µmhos
goss Common- Source Output Conductance VGS = 0V, VDS = 15V, f = 1.0kHz 200 µmhos
Symbol Parameter Max. Units
PDTotal Device Dissipation
Derate above 25°C350
2.8 mW
mW/°C
RθJC Thermal Resistance, Junction to Case 125 °C/W
RθJA Thermal Resistance, Junction to Ambient 357 °C/W
J270
P-Channel Switch
This device is designed for low level analog switching sample and hold
circuits and chopper stabilized amplifiers.
Sourced from process 88.
TO-92
1. Drain 2. Gate 3. Sour ce
1
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
Package Dimensions
J270
Dimensions in Millimeters
Rev. A, July 2003©2003 Fairchild Semiconductor Corporation
©2003 Fairchild Semiconductor Corporation Rev. I3
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
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application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
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