. [IRF520,521 | xO 2o(MOS [FET [b34ci2,k2 FIELD EFFECT POWER TRANSISTOR | _cetvisis 100, 60 VOLTS RDS(ON) = 0.3 0 This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device rugged- ness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power ; supplies, inverters, converters and solenoid/relay drivers. on ASE STYLE TO-220AB Also, the extended safe operating area with good linear oai1026) 9295 serge 0 ; ; goairo26) 91298) soou4 transfer characteristics makes it well suited for many linear $2008 68 [pen Re applications such as audio amplifiers and servo motors. 7|\-B N-CHANNEL .055(1.39 048(T-22) Features | TEMPERATURE /{_! t Been @ Polysilicon gate Improved stability and reliability 188368 + S800 te @ No secondary breakdown Excellent ruggedness | } | = . + 130{3.3} fe 0610-15) . @ Ultra-fast switching Independent of temperature Ala C fone : TERM.1 \ 500112. T Voltage controlled High transconductance TERM2 os6i1.39 @ Low input capacitance Reduced drive requirement TERMS ae | Z tye : SNe 0.84) 106(2.67 _4 .107(2.72) Excellent thermal stability Ease of paralleling oars) = el rm 0872.20) UNIT TYPE |TERM.ITERM.2] TERM.3 TAB POWER MOS FET {TG-220-AB] GATE |ORAIN|SOURCE| DRAIN maximum ratings (Tc = 25C) (unless otherwise specified) RATING SYMBOL IRF520/D84CL2 IRF521/D84CK2 UNITS Drain-Source Voltage Vpss 100 60 Volts Drain-Gate Voltage, Rag = 1MO VpoarR 100 60 Volts Continuous Drain Current Te: = 25C Ip 8 8 A = 100C 5 5 A Pulsed Drain Current IDM 32 32 A Gate-Source Voltage Vas +20 +20 Volts Total Power Dissipation @ Tc = 25C Po 40 40 Watts Derate Above 25C 0.32 0.32 w/c Operating and Storage Junction Temperature Range Ty, Tsta ~55 to 150 -55 to 150 C thermal characteristics Thermal Resistance, Junction to Case Resc 3.12 3.12 C/W Thermal Resistance, Junction to Ambient Raja 80 80 C/W Maximum Lead Temperature for Soldering Purposes: % from Case for 5 Seconds Th 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 177electrical characteristics (Tc = 25C) (unless otherwise specified) | CHARACTERISTIC [SYMBOL | MIN .| TYP | MAX | UNIT | off characteristics Drain-Source Breakdown Voltage IRF520/D84CL2 BVDss 100 _ _ Volts (Vag = OV, Ip = 250 uA) IRF521/D84CK2 60 Zero Gate Voltage Drain Current loss (Vps = Max Rating, Veg = OV, To = 25C) _ _ 250 uA (Vps = Max Rating, x 0.8, Veg = OV, To = 125C) _ 1000 Gate SOON ee Current lass _ _ +500 nA on characteristics Gate Threshold Voltage To = 25C | VastH) 2.0 _ 4.0 Volts (Vos = Ves; Ip = 250 uA) On-State Drain Current _ _ (Vas = 10V, Vps = 10V) In(on) | 80 A Static Drain-Source On-State Resistance _ (Vag = 10V, Ip = 4A) Rps(ON) 0.23 0.3 Ohms Forward Transconductance _ (Vpg = 10V, Ip = 44) Ofs 1.2 2.2 mhos dynamic characteristics input Capacitance Vas = 10V Ciss _ 410 600 pF Output Capacitance Vos = 25V Coss _ 160 400 pF Reverse Transfer Capacitance f= 1 MHz Crss _ 40 100 pF switching characteristics Turn-on Delay Time Vps = 30V td(on) _ 15 _ ns Rise Time Ip = 4A, Vas = 15V tr _ 30 _ ns Turn-off Delay Time Ra@en = 500, Rag = 12.50 | taioft) _ 25 _ ns Fall Time (Ras (EQuiv.) = 109) tt _ 10 _ ns source-drain diode ratings and characteristics* Continuous Source Current Is _ _ 8 A Pulsed Source Current Ism - _ 32 A Diode Forward Voltage Vv _ 1.0 25 Volts (To = 25C, Vag = OV, Ig = 8A) sb Reverse Recovery Time ter _ 100 _ ns (Ig = 8A, dig/dt = 100A/yusec, Te = 125C) Qrr - 0.9 _ uC *Pulse Test: Pulse width = 300 ws, duty cycle = 2% 100 80 60 40 20 PB OM OPERA IN MAY BE LIMITED BY Rogiony AREA i). DRAIN CURRENT (AMPERES) o 207 HMO PU Tp 25C 0.1 1 2 4 6 810 20 40 6080100 200 Vpg. ORAIN-SOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA 400 600 1000 178 Rigs(on CONDITIONS: Ig = 4.0 A, Vag = 10V V@s(TH) CONDITIONS: Ip = 250zA, Vos = Ves Rosion) VesitH) Rostony AND Vege) NORMALIZED ~40 a 40 80 120 180 Ty, JUNCTION TEMPERATURE (C) TYPICAL NORMALIZED Rygion; AND Vasirn VS: TEMP.