Cs Discrete POWER & Signal FAIRCHILD ee SEMICONDUCTOR wm Technologies BZX55C 3V3 - 33 Series Half Watt Zeners Abso I ute Maxi mum Rati n gs* TA = 25C unless otherwise noted Tolerance: C = 5% f Parameter Value Units Storage Temperature Range -65 to +200 C Maximum Junction Operating Temperature + 200 C Lead Temperature (1/16 from case for 10 seconds) + 230 C Total Device Dissipation 500 mW Derate above 25C 4.0 mWwW/eC Surge Power** 30 Ww *These ratings are limiting values above which the serviceability of the diode may be impaired. **Non-recurrent square wave PW= 8.3 ms, TA= 50 degrees C. DO-35 NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. a Electri cal Characteristics TA = 25C unless otherwise noted Devi Vz Zz @ Izr Zk @ Izr Vr Ip In Tc Izu evice ) (Q) (mA) | (Q) (mA) | CV) (uA) HA) | (owe | (ma) MIN MAX Ta= 150C BZX55C 3V3 3.1 3.5 85 5.0 600 1.0 1.0 2.0 40 - 0.060 115 BZX55C 3V6 3.4 3.8 85 5.0 600 1.0 1.0 2.0 40 - 0.055 105 BZX55C 3V9 3.7 4.14 85 5.0 600 1.0 1.0 2.0 40 - 0.050 95 BZX55C 4V3 4.0 46 75 5.0 600 1.0 1.0 1.0 20 - 0.040 90 BZX55C 4V7 4.4 5.0 60 5.0 600 1.0 1.0 0.5 10 - 0.020 85 BZX55C 5V1 48 5.4 35 5.0 550 1.0 1.0 0.1 2.0 +0.010 80 BZX55C 5V6 5.2 6.0 25 5.0 450 1.0 1.0 0.1 2.0 +0.025 70 BZX55C 6V2 5.8 6.6 10 5.0 200 1.0 2.0 0.1 2.0 +0.032 64 BZX55C 6V8 6.4 7.2 8.0 5.0 150 1.0 3.0 0.1 2.0 +0.040 58 BZX55C 7V5 7.0 7.9 7.0 5.0 50 1.0 5.0 0.1 2.0 +0.045 53 BZX55C 8V2 71 8.7 7.0 5.0 50 1.0 6.2 0.1 2.0 +0.048 47 BZX55C 9V1 8.5 9.6 10 5.0 50 1.0 6.8 0.1 2.0 +0.050 43 BZX55C 10 9.4 10.6 15 5.0 70 1.0 7.5 0.1 2.0 +0.055 40 BZX55C 11 10.4 11.6 20 5.0 70 1.0 8.2 0.1 2.0 +0.060 36 BZX55C 12 11.4 12.7 20 5.0 90 1.0 9.1 0.1 2.0 +0.065 32 BZX55C 13 12.4 14.1 26 5.0 110 1.0 10 0.1 2.0 0.070 29 BZX55C 15 13.8 15.6 30 5.0 110 1.0 11 0.1 2.0 0.070 27 BZX55C 16 15.3 17.1 40 5.0 170 1.0 12 0.1 2.0 0.075 24 BZX55C 18 16.8 19.1 50 5.0 170 1.0 13 0.1 2.0 0.075 21 BZX55C 20 18.8 21.1 55 5.0 220 1.0 15 0.1 2.0 0.080 20 BZX55C 22 20.8 23.3 55 5.0 220 1.0 16 0.1 2.0 0.080 18 BZX55C 24 22.8 25.6 80 5.0 220 1.0 18 0.1 2.0 0.080 16 BZX55C 27 25.1 28.9 80 5.0 220 1.0 20 0.1 2.0 0.085 14 BZX55C 30 28.0 32.0 80 5.0 220 1.0 22 0.1 2.0 0.085 13 BZX55C 33 31.0 35.0 80 5.0 220 1.0 24 0.1 2.0 0.085 12 Ve Foward Voltage = 1.0 V Maximum @ I, = 100 mA for all BZX 55 series 41997 Fairchild Semiconductor Corporation S DGSXZ4E - EAE OSSXZE Solo