TLP908(F),TLP908(LB,F)
2004-02-18
1
TOSHIBA Photoreflective Sensors Infrared LED+Phototransistor
TLP908(F),TLP908(LB,F)
Lead Free Product
Detection Of Start And End Marks On VCR And Audio
Tape
Detection Of VCR Reel Rotation
Detection Of Index WriteProtect and Presence Of Disk
In Floppy Disk Drive
Timing Detection In Electronic Printers And Typewriters
Reading Of Camera Film Information(DX Codes)
• Very small package: 2.6×3.4mm(height 1.5mm)
TLP908(F): Flat lead type
TLP908(LB,F): Small dip type
• Short detection distance: Optimum distance 0.5mm~1.5mm
• High sensitivity: tr,tf=10µs(typ.)
• Black mold package impermeable to visible light
Pin Connection
1
2 3
4
1. Anode
2. Cathode
3. Collector
4. Emitter
Unit: mm
TOSHIBA 11−4B1
TOSHIBA 11−4B101
Weight: 0.05g(typ.)
TLP908(F)
TLP908(LB,F)
TLP908(F),TLP908(LB,F)
2004-02-18
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Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Forward current IF 50 mA
Forward current derating
(Ta>25°C) IF / °C −0.67 mA / °C
Pulse forward current (Note 1) IFP 400 mA
LED
Reverse voltage VR 5 V
Collector−emitter voltage VCEO 30 V
Emitter−collector voltage VECO 5 V
Collector power dissipation PC 50 mW
Collector power dissipation
derating(Ta>25°C) PC / °C −0.67 mW / °C
Detector
Collector current IC 20 mA
Operating temperature range Topr −25~85 °C
Storage temperature range Tstg −30~100 °C
(Note): Pulse width≦100µs,repetitive frequency = 100Hz
Optical And Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Forward voltage VF I
F=10mA 1.00 1.15 1.30 V
Reverse current IR VR=5V 10 µA
LED
Peak emission wavelength P I
F=10mA 940 nm
Dark current ID(ICEO) VCE=10V,IF=0 0.1 µA
Detector
Peak sensitivity
wavelength P 900 nm
TLP908(F) 50 750
TLP908(R,F) 50 150
TLP908(O,F) 110 330
TLP908(LB,F) 50 750
TLP908(R-LB,F) 50 150
Collector current IC VCE=5V,
IF=10mA
TLP908(O-LB,F) 110 330
µA
Leakage current ILEAK VCE=5V,IF=10mA
No reflecting substance exists. 0.1 µA
Collector−emitter saturation
voltage VCE(sat) I
F=10mA,IC=25µA 0.15 0.4 V
Rise time tr 10
Coupled
Fall time tf
VCC=10V,IC=1mA,
RL=1k 10
µs
TLP908(F),TLP908(LB,F)
2004-02-18
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(Note 2): Collector current test method
Precautions
• Soldering temperature: 260°C max Soldering time: 3s max
• When forming the leads,be careful not to apply stress to the main body of the device(the resin part). Soldering
must be performed after the leads have been formed.
• The collector current increases over time due to current flowing in the infrared LED. The design of circuits
which incorporate the device must take into account the change in collector current over time. The change in
collector current is equal to the reciprocal of the change in LED infrared optical output.
Aluminum evaporated
TLP908(F)
Glass
(1mm thickness)
Aluminum evaporated
TLP908(LB,F)
Glass
(1mm thickness)
1.8mm 1.8mm
TLP908(F) TLP908(LB,F)
Soldering
area The diagonally shaded part in the
diagrams on the left represent the
soldering area.
(0)P (t)P
(0)I (t)I
O
O
C
C=
TLP908(F),TLP908(LB,F)
2004-02-18
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IF – Ta
Ambient temperature Ta (°C)
Allowable forward current
I
F (mA)
50
0
0
40
30
20
10
20 40 60 80 100 120 140
PC – Ta
Allowable collector power
dissipation PC (mW)
50
0
0
40
30
20
10
20 40 60 80 100 120
Ambient temperature Ta (°C)
I
C – IF (typ.)
Forward current IF (mA)
Collector current IC (µA)
Ta = 25 °C
VCE = 5 V
VCE = 0.4 V
3000
10
1
1000
500
300
100
50
30
3 10 30 100 300
1000
Sample A
B
C
IFP – DR
Duty ratio DR
Allowable pulse forward current
IFP (mA)
2000
0
10
3
1000
30
50
100
300
500
10
2 10
1 100
Ta = 25 °C
Pulse width ≦ 100 µs
I
FP – VFP (typ.)
Pulse forward voltage VFP (V)
Pulse forward current IFP (mA)
500
1
0.8
300
100
50
30
10
5
3
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
Pulse width = 100 µs
Repetitive
frequency = 100 Hz
Ta = 25 °C
I
F – VF (typ.)
Forward voltage VF (V)
Forward current IF (mA)
Ta = 25 °C
50
1
0.9
30
10
5
3
1.0 1.1 1.2 1.3 1.4 1.5
Ta=75°C
50 25 0
25
TLP908(F),TLP908(LB,F)
2004-02-18
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Collector current IC (µA)
IC – VCE (typ.)
Collector–emitter voltage VCE (V)
Ta = 25 °C
600
0
500
300
200
0
2 4 6 8 10
400
100
12 14
IF = 4mA
8
12
20
16
VCE(sat) – Ta (typ.)
Ambient temperature Ta (°C)
Collector–emitter saturation
voltage VCE(sat) (V)
IF = 10 mA
IC = 25 µA
0.24
40
0.20
0.16
0.12
0.08
0.04
0
20 0 20 40 60 80 100
IC – Ta (typ.)
Ambient temperature Ta (°C)
Collector current IC (µA)
VCE = 5 V
1000
1
40
500
300
100
50
30
10
5
3
20 0 20 40 60 80 100
IF = 2mA
5
10
20
ID(ICEO) – Ta (typ.)
Ambient temperature Ta (°C)
Dark current ID(ICEO) (µA)
10
3
0
1
10
1
10
2
20 40 60 80 100 120 140
10
4
VCE = 10 V 5
TLP908(F),TLP908(LB,F)
2004-02-18
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Spectral Response Characteristics
(Detector) (typ.)
Wavelength (nm)
Relative sensitivity
Ta = 25 °C
1.2
0
500
1.0
0.8
0.6
0.4
0.2
600 700 800 900 1000 1100 1200
Switching Characteristics (typ.)
Load resistance RL (k)
Switching time (µs)
Ta = 2 5 ° C
VCC = 10 V
VOUT = 3 V
1000
1
1
500
300
100
50
30
10
5
3
3 10 30 100
tr, tf
td
ts
Switching Time Test Circuit
td
IF
VOUT
tr t
s
tf
10%
90%
VOUT
IFVCC
RL
IC
t
r, tf – IC (typ.)
Collector current IC (µA)
Rise and fall time tr , tf (µs)
Ta = 25 °C
VCC = 10 V
tr
tf
1000
1
30
500
300
100
50
30
10
5
3
100 300 1000 3000
100
1 k
3 k
RL = 10 k
TLP908(F),TLP908(LB,F)
2004-02-18
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Detection Position
Characteristic (1) (typ.)
Card moving distance (mm)
Relative collector current
Ta = 25 °C
VCE = 5 V
IF = 10 mA
d = 1 mm
1.0
0
3
0.8
0.6
0.4
0.2
2 1 0 1 2 3 4
Detection Position
Characteristic (2) (typ.)
Card moving distance (mm)
Relative collector current
Ta = 25 °C
VCE = 5 V
IF = 10 mA
d = 1 mm
1.0
0
3 4
0.8
0.6
0.4
0.2
2 1 0 1 2 3
Detection Distance
Characteristic (2) (typ.)
Distance between device
and test cards d (mm)
Collector current IC (µA)
(a) Reflection ratio 90% for
white color paper
(b) A
(c) PPC paper
(d) OHP
(e) Magnetic tape
Ta = 25 °C
IF = 10 mA
VCE = 5 V
1000
1
0
500
300
100
50
30
10
5
3
1 2 3 4 5 6 7 8
(a)
(b)
(c)
(d)
(e)
d +
Test card
d +
Test card
d +
Test card
d +
Test card
Test Conditions For Detection
Position Characteristics
Detection position (1)
Detection position(2)
Test card : Reflection ratio 90% for white color
paper(kodak neutral test card)
Detection Distance
Characteristic (1) (typ.)
Distance between device
and test cards d (mm)
Relative collector current
1.4
0.2
0
1.2
1.0
0.8
0.6
0.4
1 2 3 4 5 6 7 8
0
IF = 10 mA
VCE = 2 V
Ta = 25 °C
Te s t c a r d ：
Reflection ratio
90% for white
color paper
TLP908(F),TLP908(LB,F)
2004-02-18
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• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
030619EAC
RESTRICTIONS ON PRODUCT USE
