TLP908(F),TLP908(LB,F) TOSHIBA Photoreflective Sensors Infrared LED+Phototransistor TLP908(F),TLP908(LB,F) Lead Free Product Detection Of Start And End Marks On VCR And Audio Tape Detection Of VCR Reel Rotation Detection Of Index Write-Protect and Presence Of Disk In Floppy Disk Drive Timing Detection In Electronic Printers And Typewriters Reading Of Camera Film Information(DX Codes) * Very small package: 2.6x3.4mm(height 1.5mm) TLP908(F): Flat lead type TLP908(LB,F): Small dip type * Short detection distance: Optimum distance 0.5mm~1.5mm * High sensitivity: tr,tf=10s(typ.) * Black mold package impermeable to visible light Unit: mm TLP908(F) TOSHIBA TLP908(LB,F) Pin Connection 1 11-4B1 4 1. Anode 2. Cathode 3. Collector 4. Emitter 2 3 TOSHIBA 11-4B101 Weight: 0.05g(typ.) 1 2004-02-18 TLP908(F),TLP908(LB,F) Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit IF 50 mA IF / C -0.67 mA / C IFP 400 mA LED Forward current Forward current derating (Ta>25C) Pulse forward current (Note 1) Detector Reverse voltage VR 5 V Collector-emitter voltage VCEO 30 V Emitter-collector voltage VECO 5 V Collector power dissipation PC 50 mW Collector power dissipation derating(Ta>25C) PC / C -0.67 mW / C IC 20 mA Operating temperature range Collector current Topr -25~85 C Storage temperature range Tstg -30~100 C (Note): Pulse width100s,repetitive frequency = 100Hz Optical And Electrical Characteristics (Ta = 25C) Detector LED Characteristic Test Condition Min Typ. Max Unit Forward voltage VF IF=10mA 1.00 1.15 1.30 V Reverse current IR VR=5V 10 A Peak emission wavelength P IF=10mA 940 nm VCE=10V,IF=0 0.1 A 900 nm TLP908(F) 50 750 TLP908(R,F) 50 150 TLP908(O,F) 110 330 TLP908(LB,F) 50 750 TLP908(R-LB,F) 50 150 TLP908(O-LB,F) Dark current Peak sensitivity wavelength Collector current Coupled Symbol ID(ICEO) P IC VCE=5V, IF=10mA A 110 330 VCE=5V,IF=10mA No reflecting substance exists. 0.1 A VCE(sat) IF=10mA,IC=25A 0.15 0.4 V Rise time tr 10 Fall time tf VCC=10V,IC=1mA, RL=1k 10 Leakage current Collector-emitter saturation voltage ILEAK 2 s 2004-02-18 TLP908(F),TLP908(LB,F) (Note 2): Collector current test method Aluminum evaporated Aluminum evaporated Glass (1mm thickness) Glass (1mm thickness) TLP908(F) TLP908(LB,F) Precautions * Soldering temperature: 260C max 1.8mm 1.8mm TLP908(F) Soldering time: 3s max Soldering area The diagonally shaded part in the diagrams on the left represent the soldering area. TLP908(LB,F) * When forming the leads,be careful not to apply stress to the main body of the device(the resin part). Soldering must be performed after the leads have been formed. * The collector current increases over time due to current flowing in the infrared LED. The design of circuits which incorporate the device must take into account the change in collector current over time. The change in collector current is equal to the reciprocal of the change in LED infrared optical output. I C (t) PO (t) = I C (0) PO (0) 3 2004-02-18 TLP908(F),TLP908(LB,F) IF - Ta PC - Ta 50 Allowable collector power dissipation PC (mW) Allowable forward current IF (mA) 50 40 30 20 10 0 0 20 40 60 80 100 Ambient temperature Ta 120 40 30 20 10 0 0 140 20 (C) 40 IFP - DR Ta = 25 C Pulse width 100 s 500 (mA) 300 100 50 30 0 -3 10 -2 10 -1 10 Duty ratio Ta=75C 50 5 25 0 -25 3 1.0 1.1 1.2 1.3 Forward voltage (typ.) VF 1.4 1.5 (V) IC - IF (typ.) 3000 (A) 300 IC 100 50 30 Collector current (mA) (typ.) 10 DR IFP - VFP IFP 120 (C) Ta = 25 C 1 0.9 0 10 500 Pulse forward current 100 Ta 30 IF 1000 80 IF - VF 50 Forward current Allowable pulse forward current IFP (mA) 2000 60 Ambient temperature 10 5 Pulse width = 100 s 3 Repetitive 1000 500 Sample A 300 B C 100 50 Ta = 25 C 30 VCE = 5 V VCE = 0.4 V frequency = 100 Hz 1 0.8 Ta = 25 C 1.0 1.2 1.4 1.6 1.8 2.0 Pulse forward voltage 2.2 2.4 VFP (V) 2.6 10 2.8 1 3 10 30 Forward current IF 4 100 300 1000 (mA) 2004-02-18 TLP908(F),TLP908(LB,F) IC - VCE VCE(sat) - Ta (typ.) Ta = 25 C 500 20 400 16 300 12 200 8 IF = 4mA 100 2 4 6 8 Collector-emitter voltage 12 10 VCE 14 IF = 10 mA IC = 25 A 0.20 0.16 0.12 0.08 0.04 0 -40 0 0 (typ.) 0.24 Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (A) 600 -20 (V) IC - Ta 0 (typ.) 1000 20 40 Ambient temperature 60 Ta 80 100 (C) ID(ICEO) - Ta (typ.) VCE = 5 V 500 1 300 (A) 100 50 5 30 IF = 2mA 10 -1 10 ID(ICEO) 10 Dark current Collector current IC (A) 20 VCE = 10 V 5 -2 10 -3 10 5 3 1 -40 -20 0 20 40 Ambient temperature 60 Ta 80 -4 10 0 100 20 40 60 80 Ambient temperature (C) 5 100 Ta 120 140 (C) 2004-02-18 TLP908(F),TLP908(LB,F) Switching Characteristics 1000 tr, tf - IC (typ.) Ta = 25 C Ta = 25 C VCC = 10 V 500 VOUT = 3 V 500 300 300 VCC = 10 V tr tf td 30 (s) 50 RL = 10 k 100 tr , tf 100 50 Rise and fall time (s) tr, tf Switching time (typ.) 1000 ts 10 3 k 30 1 k 10 100 5 5 3 3 1 1 3 10 30 Load resistance RL 100 1 100 30 (k) 300 1000 Collector current IC 3000 (A) Spectral Response Characteristics (Detector) (typ.) 1.2 Switching Time Test Circuit Ta = 25 C Relative sensitivity 1.0 VCC IF 0.8 IC 0.6 IF VOUT RL VOUT td 0.4 tf tr 90% 10% ts 0.2 0 500 600 700 800 Wavelength 900 1000 1100 1200 (nm) 6 2004-02-18 TLP908(F),TLP908(LB,F) Detection Distance Characteristic (1) 1.4 Detection Position Characteristic (1) (typ.) IF = 10 mA Relative collector current Ta = 25 C Relative collector current Test card 1.0 Reflection ratio 90% for white color paper 0.8 Ta = 25 C 1.0 VCE = 2 V 1.2 0.6 (typ.) VCE = 5 V IF = 10 mA d = 1 mm 0.8 0.6 0.4 0.2 0.4 0 -3 0.2 -2 -1 0 1 Card moving distance 0 0 1 2 3 4 5 6 7 2 3 4 (mm) 8 Distance between device and test cards d (mm) Detection Distance Characteristic (2) 1000 Detection Position Characteristic (2) (typ.) (a) Reflection ratio 90% for 500 1.0 Relative collector current white color paper (b) A (c) PPC paper 300 (d) OHP Collector current IC (A) (e) Magnetic tape Ta = 25 C 100 IF = 10 mA VCE = 5 V 50 (typ.) Ta = 25 C VCE = 5 V IF = 10 mA 0.8 d = 1 mm 0.6 0.4 0.2 30 (a) (d) 0 -3 (b) -2 -1 0 1 Card moving distance 10 (e) 2 4 3 (mm) (c) 5 3 Test Conditions For Detection Position Characteristics Detection position (1) Test card 1 0 1 2 3 4 5 6 7 8 Distance between device and test cards d (mm) d - + Test card d - Detection position(2) Test card d - + + Test card d - + Test card : Reflection ratio 90% for white color paper(kodak neutral test card) 7 2004-02-18 TLP908(F),TLP908(LB,F) RESTRICTIONS ON PRODUCT USE 030619EAC * The information contained herein is subject to change without notice. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. * GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. 8 2004-02-18