MMBTA13
MMBTA14
NPN Darlington
Amplifier Transistor
SOT-23
Suggested Solder
Pad Layout
Features
• Operating And Storage Temperatures –55OC to 150OC
• RθJA is 556OC/W (Mounted on FR-5 PCB 1.0”x0.75”x0.062”)
• Capable of 225mWatts of Power Dissipation
• Marking Code: MMBTA13 ----K2D; MMBTA14 ---- 1N
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .110 .120 2.80 3.04
B .083 .098 2.10 2.64
C .047 .055 1.20 1.40
D .035 .041 .89 1.03
E .070 .081 1.78 2.05
F .018 .024 .45 .60
G .0005 .0039 .013 .100
H .035 .044 .89 1.12
J .003 .007 .085 .180
K .015 .020 .37 .51
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage*
(IC=100uAdc, IB=0) 30 Vdc
V(BR)CBO Collector-Base Breakdown Voltage 30 Vdc
V(BR)EBO Emitter-Base Breakdown Voltage 10 Vdc
IC Collector Current-Continuous 300 mAdc
ICBO Collector Cutoff Current
(VCB=30Vdc, IE=0) 100 nAdc
IEBO Emitter Cutoff Current
(VEB=10Vdc, IC=0) 100 nAdc
ON CHARACTERISTICS
hFE
MMBTA13
MMBTA14
MMBTA13
MMBTA14
DC Current Gain*
(IC=10mAdc, VCE=5.0Vdc)
(IC=150mAdc, VCE=1.0Vdc)
5000
10000
10000
20000
VCE(sat) Collector-Emitter Saturation Voltage
(IC=100mAdc, IB=0.1mAdc) 1.5 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(IC=100mAdc,VCE=5.0Vdc) 2.0 Vdc
SMALL-SIGNAL CHARACTERISTICS
fT Current Gain-Bandwidth Product
(IC=10mAdc, VCE=5.0Vdc, f=100MHz) 125 MHz
Cobo Output Capacitance
(VCB=10Vdc, IE=0, f=1.0MHz) 8.0 pF
Cibo Input Capacitance
(VBE=0.5Vdc, IC=0, f=1.0MHz) 15 pF
SWITCHING CHARACTERISTICS
td Delay Time (VCC=30Vdc, VBE=0.5Vdc 10 ns
tr Rise Time IC=150mAdc, IB1=15mAdc) 25 ns
ts Storage Time (VCC=30Vdc, IC=150mAdc 225 ns
tf Fall Time IB1=IB2=15mAdc) 60 ns
.079
2.000
inches
mm
.031
.800
.035
.900
.037
.950
K
A
B
C
D
E
F
G
H
J
Base
Collector
Emitter
omponents
21201 Itasca Street Chatsworth
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Figure 2. Noise Voltage
f, FREQUENCY (Hz)
50
100
200
500
20
Figure 3. Noise Current
f, FREQUENCY (Hz)
Figure 4. Total Wideband Noise Voltage
RS, SOURCE RESISTANCE (kΩ)
Figure 5. Wideband Noise Figure
RS, SOURCE RESISTANCE (kΩ)
5.0
50
70
100
200
30
10
20
1.0
10
10
20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
BANDWIDTH = 1.0 Hz
RS ≈ 0
IC = 1.0 mA
100 µA
10 µA
BANDWIDTH = 1.0 Hz
IC = 1.0 mA
100 µA
10 µA
en, NOISE VOLTAGE (nV)
in, NOISE CURRENT (pA)
2.0 5.0 10 20 50 100 200 500 1000
BANDWIDTH = 10 Hz TO 15.7 kHz
IC = 10 µA
100 µA
1.0 mA
8.0
10
12
14
6.0
0
4.0
1.0 2.0 5.0 10 20 50 100 200 500 1000
2.0
BANDWIDTH = 10 Hz TO 15.7 kHz
10 µA
100 µA
IC = 1.0 mA
VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)
NF, NOISE FIGURE (dB)
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
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MMBTA14
MMBTA13
Figure 6. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
5.0
7.0
10
20
3.0
Figure 7. High Frequency Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 9. Collector Saturation Region
IB, BASE CURRENT (µA)
2.0
200k
5.0
0.04
4.0
2.0
1.0
0.8
0.6
0.4
0.2
TJ = 255C
C, CAPACITANCE (pF)
1.5
2.0
2.5
3.0
1.0
0.5
|hfe|, SMALL-SIGNAL CURRENT GAIN
hFE, DC CURRENT GAIN
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40
Cibo
Cobo
0.5 1.0 2.0 0.5 10 20 50 100 200 500
VCE = 5.0 V
f = 100 MHz
TJ = 255C
100k
70k
50k
30k
20k
10k
7.0k
5.0k
3.0k
2.0k 7.0 10 20 30 50 70 100 200 300 500
TJ = 1255C
255C
-555C
VCE = 5.0 V
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
TJ = 255C
IC = 10 mA 50 mA 250 mA 500 mA
Figure 10. “On” Voltages
IC, COLLECTOR CURRENT (mA)
Figure 11. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
1.6
5.0
-1.0
V, VOLTAGE (VOLTS)
1.4
1.2
1.0
0.8
0.6 7.0 10 20 30 50 70 100 200 300 500
VBE(sat) @ IC/IB = 1000
RV, TEMPERATURE COEFFICIENTS (mV/ C)5
θ
TJ = 255C
VBE(on) @ VCE = 5.0 V
VCE(sat) @ IC/IB = 1000
-2.0
-3.0
-4.0
-5.0
-6.0
5.0 7.0 10 20 30 50 70 100 200 300 500
255C TO 1255C
-555C TO 255C
*RVC FOR VCE(sat)
VB FOR VBE
255C TO 1255C
-555C TO 255C
*APPLIES FOR IC/IB 3 hFE/3.0
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MMBTA14
MMBTA13
Figure 12. Thermal Response
t, TIME (ms)
1.0
r(t), TRANSIENT THERMAL
2.0 5.01.00.50.20.1
RESISTANCE (NORMALIZED)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
20 5010 200 500100 1.0k 2.0k 5.0k 10k
Figure 13. Active Region Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0k
0.4
700
500
300
200
100
70
50
30
20
10 0.6 1.0 2.0 4.0 6.0 10 20 40
IC, COLLECTOR CURRENT (mA)
TA = 25°C
D = 0.5
0.2
0.1 0.05 SINGLE PULSE
SINGLE PULSE
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
ZθJC(t) = r(t) • RθJCTJ(pk) - TC = P(pk) ZθJC(t)
ZθJA(t) = r(t) • RθJATJ(pk) - TA = P(pk) ZθJA(t)
1.0 ms
100 µs
TC = 25°C
1.0 s
Design Note: Use of Transient Thermal Resistance Data
FIGURE A
tP
PPPP
t1
1/f
DUTYCYCLE t1f t1
tP
PEAK PULSE POWER = PP
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MMBTA14
MMBTA13