Symbol
VDS
VGS
IDM
IAR
EAR
TJ, TSTG
Symbol Typ Max
17.4 30
50 60
RθJC 4 7.5
W
TA=70°C 1.3
Power Dissipation A
TA=25°C PDSM
2
Repetitive avalanche energy L=0.3mH C22
A
mJ
Junction and Storage Temperature Range
A
PD
°C
20
10
-55 to 175
TC=100°C
Avalanche Current C12
ID
20
15
50
Pulsed Drain Current C
Power Dissipation B
TC=25°C
Continuous Drain
Current
Maximum UnitsParameter
TC=25°C
TC=100°C
Absolute Maximum Ratings TA=25°C unless otherwise noted
V
V±20Gate-Source Voltage
Drain-Source Voltage 40
°C/W
Maximum Junction-to-Ambient ASteady-State °C/W
W
Maximum Junction-to-Case BSteady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient At ≤ 10s RθJA
AOD488
N-Channel Enhancement Mode Field Effect Transistor
Features
VDS (V) = 40V
ID = 20 A (VGS = 10V)
RDS(ON) < 26 mΩ (VGS = 10V)
RDS(ON) < 39 mΩ (VGS = 4.5V)
General Description
The AOD488 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
Standard Product AOD488 is Pb-free (meets ROHS
& Sony 259 specifications). AOD488L is a Green
Product ordering option. AOD488 and AOD488L are
electrically identical.
G
D
S
G D S
T
O-252
D-PAK
T
op View
Drain Connected to
T
ab
Alpha & Omega Semiconductor, Ltd.
AOD488
Symbol Min Typ Max Units
BVDSS 40 45 V
1
TJ=55°C 5
IGSS 0.1 uA
VGS(th) 1 2.3 3 V
ID(ON) 50 A
21.5 26
TJ=125°C 34 41
31 39 m
Ω
gFS 25 S
VSD 0.76 1 V
IS20 A
Ciss 404 500 pF
Coss 95 pF
Crss 37 pF
Rg2.7 4 Ω
Qg(10V) 9.2 12 nC
Qg(4.5V) 4.5 nC
Qgs 1.6 nC
Qgd 2.6 nC
tD(on) 3.5 ns
tr6ns
tD(off) 13.2 ns
tf3.5 ns
trr 22.9 ns
Qrr 18.3 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=20V, RL=1.0Ω,
RGEN=3Ω
Gate resistance VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
VGS=10V, VDS=20V, ID=20A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
mΩ
VGS=4.5V, ID=8A
IS=1A, VGS=0V
VDS=5V, ID=20A
RDS(ON) Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
IDSS µA
Gate Threshold Voltage VDS=VGS, ID=250µA
VDS=32V, VGS=0V
VDS=0V, VGS=±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
Body Diode Reverse Recovery Time
Drain-Source Breakdown Voltage
On state drain current
ID=10mA, VGS=0V
VGS=10V, VDS=5V
VGS=10V, ID=20A
Reverse Transfer Capacitance
IF=20A, dI/dt=100A/µs
VGS=0V, VDS=20V, f=1MHz
SWITCHING PARAMETERS
A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on RthJA and the maximum allowed junction temperature of 150 °C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175 °C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175 °C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175 °C.
D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175 °C.
G.These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25 °C. The SOA
curve provides a single pulse rating.
Rev 0: Mar. 2006
Alpha & Omega Semiconductor, Ltd.
AOD488
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
500
150
60
0
5
10
15
20
2 2.5 3 3.5 4 4.5
VGS(Volts)
Figure 2: Transfer Characteristics
ID(A)
10
15
20
25
30
35
40
45
50
0 5 10 15 20 25
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
RDS(ON) (mΩ)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD (Volts)
Figure 6: Body-Diode Characteristics
IS (A)
25°C
125°C
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
Normalized On-Resistance
VGS=4.5V
ID=8A
VGS=10V
ID=20A
10
20
30
40
50
60
70
80
90
100
246810
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
RDS(ON) (mΩ)
25°C
125°C
VDS=5V
VGS=4.5V
VGS=10V
ID=20A
25°C
125°C
0
5
10
15
20
25
30
35
40
45
50
55
60
012345
VDS (Volts)
Fig 1: On-Region Characteristics
ID (A)
VGS=3.5V
4V
10V
4.5V
8V
5V
Alpha & Omega Semiconductor, Ltd.
AOD488
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
500
150
60
0
2
4
6
8
10
0246810
Qg (nC)
Figure 7: Gate-Charge Characteristics
VGS (Volts)
0
100
200
300
400
500
600
700
0 5 10 15 20 25 30 35 40
VDS (Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
Ciss
0
40
80
120
160
200
0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Power (W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
ZθJC Normalized Transient
Thermal Resistance
Coss
Cr
ss
0.1
1.0
10.0
100.0
0.1 1 10 100
VDS (Volts)
ID (Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100µs
10ms
1ms
DC
RDS(ON)
limited
TJ(Max)=175°C,
TA=25°C
VDS=20V
ID=20A
Single Pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=7.5°C/W
T
o
nT
P
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=175°C
TA=25°C
10
µ
s
Alpha & Omega Semiconductor, Ltd.
AOD454
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
500
150
60
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
ZθJA Normalized Transient
Thermal Resistance
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
T
o
nT
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0
2
4
6
8
10
12
14
0.00001 0.0001 0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
ID(A), Peak Avalanche Current
0
5
10
15
20
25
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 13: Power De-rating (Note B)
Power Dissipation (W)
0
5
10
15
20
25
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 14: Current De-rating (Note B)
Current rating ID(A)
TA=25°C
0
10
20
30
40
50
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Power (W)
TA=25°C
Alpha & Omega Semiconductor, Ltd.