1N3879 thru 1N3883R Silicon Fast Recovery Diode VRRM = 50 V - 400 V IF = 6 A Features * High Surge Capability * Types up to 400 V VRRM DO-4 Package Maximum ratings, at Tj = 25 C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive p p peak reverse voltage RMS reverse voltage DC blocking voltage Symbol Conditions 1N3879 (R) 1N3880 (R) 1N3881 (R) 1N3882 (R) 1N3883 (R) Unit VRRM 50 VRMS 35 70 VDC 50 100 100 300 400 140 210 280 V 200 300 400 V 200 V Continuous forward current IF TC 100 C 6 6 6 6 6 A Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 C, tp = 8.3 ms 90 90 90 90 90 A Operating temperature Storage temperature Tj Tstg -65 to 150 -65 to 175 -65 to 150 -65 to 175 -65 to 150 -65 to 175 -65 to 150 -65 to 175 -65 to 150 -65 to 175 C C Electrical characteristics, at Tj = 25 C, unless otherwise specified Parameter Diode forward voltage Reverse current 1N3879 (R) 1N3880 (R) 1N3881 (R) 1N3882 (R) 1N3883 (R) Unit Symbol Conditions VF IF = 6 A, Tj = 25 C VR = 50 V, Tj = 25 C VR = 50 V, Tj = 150 C 1.4 15 3 1.4 15 3 1.4 15 3 1.4 15 3 1.4 15 3 A mA IF=0.5 A, IR=1.0 A, IRR= 0.25 A 200 200 200 200 200 nS 2.5 2.5 2.5 2.5 2.5 C/W IR V Recovery Time Maximum reverse recovery time TRR Thermal characteristics Thermal resistance, junction - case www.genesicsemi.com RthJC 1 1N3879 thru 1N3883R www.genesicsemi.com 2