StrongIRFET™
IRFB7530PbF
IRFS7530PbF
IRFSL7530PbF
HEXFET® Power MOSFET
D
S
G
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
VDSS 60V
RDS(on) typ. 1.65m
max 2.00m
ID (Silicon Limited) 295A
ID (Package Limited) 195A
Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Maximum Drain Current vs. Case Temperature
TO-220AB
IRFB7530PbF
D2Pak
IRFS7530PbF
TO-262
IRFSL7530PbF
S
D
G
S
D
G
S
D
G
D
G D S
Gate Drain Source
Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
IRFB7530PbF TO-220 Tube 50 IRFB7530PbF
IRFSL7530PbF TO-262 Tube 50 IRFSL7530PbF
IRFS7530PbF Tube 50 IRFS7530PbF
Tape and Reel Left 800 IRFS7530TRLPbF
D2-Pak
25 50 75 100 125 150 175
TC , Case Temperature (°C)
0
50
100
150
200
250
300
ID, Drain Current (A)
Limited by package
2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
1
2
3
4
5
6
7
RDS(on)
, Drain-to -Source On Resistance (m
)
ID = 100A
TJ = 25°C
TJ = 125°C
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 7, 2014
2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 7, 2014
IRFB/S/SL7530PbF
Absolute Maximum Rating
Symbol Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 295
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 208
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) 195
IDM Pulsed Drain Current 760
PD @TC = 25°C Maximum Power Dissipation 375 W
Linear Derating Factor 2.5 W/°C
VGS Gate-to-Source Voltage ± 20 V
TJ
TSTG
Operating Junction and
Storage Temperature Range -55 to + 175 °C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy 524 mJ
EAS (Thermally limited) Single Pulse Avalanche Energy 1025
IAR Avalanche Current See Fig 15, 16, 23a, 23b A
EAR Repetitive Avalanche Energy mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
RJC Junction-to-Case ––– 0.40
°C/W
RCS Case-to-Sink, Flat Greased Surface 0.50 –––
RJA Junction-to-Ambient (PCB Mount) (D2-Pak) ––– 40
RJA Junction-to-Ambient (TO-220)––– 62
Static @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 47 ––– mV/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 1.65 2.00 m VGS = 10V, ID = 100A
VGS(th) Gate Threshold Voltage 2.1 ––– 3.7 V VDS = VGS, ID = 250µA
IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA VDS =60 V, VGS = 0V
––– ––– 150 VDS =60V,VGS = 0V,TJ =125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
RG Gate Resistance ––– 2.1 –––
––– 2.10 ––– VGS = 6.0V, ID = 50A
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A by
source bonding technology. Note that current limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 105µH, RG = 50, IAS = 100A, VGS =10V.
ISD 100A, di/dt 1338A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
C
oss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
C
oss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
R
is measured at TJ approximately 90°C.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994.: http://www.irf.com/technical-info/appnotes/an-994.pdf
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 45A, VGS =10V.
3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 7, 2014
IRFB/S/SL7530PbF
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 242 ––– ––– S VDS = 10V, ID =100A
Qg Total Gate Charge ––– 274 411 ID = 100A
Qgs Gate-to-Source Charge ––– 64 ––– VDS = 30V
Qgd Gate-to-Drain Charge ––– 83 ––– VGS = 10V
Qsync Total Gate Charge Sync. (Qg– Qgd) ––– 191 –––
td(on) Turn-On Delay Time ––– 52 –––
ns
VDD = 30V
tr Rise Time ––– 141 ––– ID = 100A
td(off) Turn-Off Delay Time ––– 172 ––– RG= 2.7
tf Fall Time ––– 104 ––– VGS = 10V
Ciss Input Capacitance ––– 13703 –––
pF
VGS = 0V
Coss Output Capacitance ––– 1266 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 806 ––– ƒ = 1.0MHz, See Fig.7
Coss eff.(ER)
Effective Output Capacitance
(Energy Related) ––– 1267 ––– VGS = 0V, VDS = 0V to 48V
Coss eff.(TR) Output Capacitance (Time Related) ––– 1630 ––– VGS = 0V, VDS = 0V to 48V
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 295
A
MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current ––– ––– 760 integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C,IS = 100A,VGS = 0V
dv/dt Peak Diode Recovery dv/dt ––– 8.1 ––– V/ns TJ = 175°C,IS =100A,VDS = 60V
trr Reverse Recovery Time ––– 51 –––
ns TJ = 25°C VDD = 51V
––– 54 ––– TJ = 125°C IF = 100A,
Qrr Reverse Recovery Charge ––– 86 –––
nC TJ = 25°C di/dt = 100A/µs
––– 102 ––– TJ = 125°C
IRRM Reverse Recovery Current ––– 2.9 ––– A TJ = 25°C
nC
D
S
G
4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 7, 2014
IRFB/S/SL7530PbF
Fig 6. Normalized On-Resistance vs. Temperature
Fig 5. Typical Transfer Characteristics
Fig 4. Typical Output Characteristics
Fig 3. Typical Output Characteristics
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
60µs PULSE WIDTH
Tj = 25°C
4.5V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
10
100
1000
ID, Drain-to-Source Current (A)
60µs PULSE WIDTH
Tj = 175°C
4.5V
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
2 3 4 5 6 7
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
TJ = 25°C
TJ = 175°C
VDS = 25V
60µs PULSE WIDTH
-60 -20 20 60 100 140 180
TJ , Junction Temperature (°C)
0.4
0.8
1.2
1.6
2.0
2.4
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 100A
VGS = 10V
0 50 100 150 200 250 300 350
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
VGS, Gate-to-Source Voltage (V)
VDS= 48V
VDS= 30V
VDS= 12V
ID = 100A
Fig 8. Typical Gate Charge vs.
Gate-to-Source Voltage
0.1 110 100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
1000000
C, Capacitance (pF)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 7, 2014
IRFB/S/SL7530PbF
Fig 10. Maximum Safe Operating Area
Fig 11. Drain-to-Source Breakdown Voltage
Fig 9. Typical Source-Drain Diode Forward Voltage
Fig 12. Typical Coss Stored Energy
0.1 0.4 0.7 1.0 1.3 1.6 1.9
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
-60 -20 20 60 100 140 180
TJ , Temperature ( °C )
65
68
71
74
77
80
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
Id = 1.0mA
0 102030405060
VDS, Drain-to-Source Voltage (V)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Energy (µJ)
Fig 13. Typical On-Resistance vs. Drain Current
0100 200 300 400 500
ID, Drain Current (A)
1
2
3
4
5
6
7
8
9
10
RDS(on), Drain-to -Source On Resistance (
m)
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS = 10V
0.1 1 10
VDS, Drain-toSource Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
DC
Limited by
package
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IRFB/S/SL7530PbF
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 16. Maximum Avalanche Energy vs. Temperature
Fig 15. Avalanche Current vs. Pulse Width
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 15, 16).
t
av = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
Z
thJC(D, tav) = Transient thermal resistance, see Figures 14)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
I
av = 2T/ [1.3·BV·Zth]
E
AS (AR) = PD (ave)·tav
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
Thermal Response ( Z
thJC ) °C/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
100
200
300
400
500
600
EAR , Avalanche Energy (mJ)
TOP Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 100A
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
1
10
100
1000
Avalanche Current (A)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 7, 2014
IRFB/S/SL7530PbF
Fig 17. Threshold Voltage vs. Temperature
Fig 21. Typical Stored Charge vs. dif/dt
Fig 20. Typical Stored Charge vs. dif/dt
-75 -50 -25 025 50 75 100 125 150 175
TJ , Temperature ( °C )
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS(th), Gate threshold Voltage (V)
ID = 250µA
ID = 1.0mA
ID = 1.0A
0200 400 600 800 1000
diF /dt (A/µs)
0
5
10
15
20
IRRM (A)
IF = 60A
VR = 51V
TJ = 25°C
TJ = 125°C
0200 400 600 800 1000
diF /dt (A/µs)
0
5
10
15
20
IRRM (A)
IF = 100A
VR = 51V
TJ = 25°C
TJ = 125°C
Fig 19. Typical Recovery Current vs. dif/dt
0200 400 600 800 1000
diF /dt (A/µs)
50
100
150
200
250
300
350
400
450
QRR (nC)
IF = 60A
VR = 51V
TJ = 25°C
TJ = 125°C
Fig 18. Typical Recovery Current vs. dif/dt
0200 400 600 800 1000
diF /dt (A/µs)
50
100
150
200
250
300
350
400
QRR (nC)
IF = 100A
VR = 51V
TJ = 25°C
TJ = 125°C
8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 7, 2014
IRFB/S/SL7530PbF
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
Fig 23a. Unclamped Inductive Test Circuit
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
Fig 24a. Switching Time Test Circuit
Fig 25a. Gate Charge Test Circuit
tp
V
(BR)DSS
I
AS
Fig 23b. Unclamped Inductive Waveforms
Fig 24b. Switching Time Waveforms
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
Fig 25b. Gate Charge Waveform
VDD
9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 7, 2014
IRFB/S/SL7530PbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
IN T E R N A T IO N A L PART NUMBER
R E C T IF IE R
LO T C O D E
ASSEM BLY
LO G O
YEAR 0 = 2000
DATE CODE
W EEK 19
LIN E C
LOT CODE 1789
E X A M P L E : T H IS IS A N IR F 1 0 1 0
N o te : "P " in a s s e m b ly lin e p o s itio n
indicates "Lead - Free"
IN THE ASSEM BLY LINE "C"
ASSEM BLED O N W W 19, 2000
TO-220AB packages are not recommended for Surface Mount Application.
10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 7, 2014
IRFB/S/SL7530PbF
TO-262 Package Outline (Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
LOGO
RECTIFIER
INTERNATIONAL
LOT CODE
ASSEMBLY
LOGO
RECTIFIER
INTERNATIONAL
DATE CODE
WEEK 19
YEAR 7 = 1997
PART NUMBER
A = ASSEMBLY SITE CODE
OR
PRODUCT (OPTIONAL)
P = DESIGNATES LEAD-FREE
EXAMPLE: THIS IS AN IRL3103L
LOT CODE 1789
ASSEMBLY
PART NUMBER
DATE CODE
WEEK 19
LINE C
LOT CODE
YEAR 7 = 1997
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 7, 2014
IRFB/S/SL7530PbF
D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))
D2Pak (TO-263AB) Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
DATE CODE
YEAR 0 = 2000
WEEK 02
A = ASSEMBLY SITE CODE
RECTIFIER
INTERNATIONAL PART NUMBER
P = DESIGNATES LEAD - FREE
PRODUCT (OPTIONAL)
F530S
IN THE ASSEMBLY LINE "L"
ASSEMBLED ON WW 02, 2000
THIS IS AN IRF530S WITH
LOT CODE 8024 INTERNATIONAL
LOGO
RECTIFIER
LOT CODE
ASSEMBLY YEAR 0 = 2000
PART NUMBER
DATE CODE
LINE L
WEEK 02
OR
F530S
LOGO
ASSEMBLY
LOT CODE
12 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 7, 2014
IRFB/S/SL7530PbF
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
13 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 7, 2014
IRFB/S/SL7530PbF
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Qualification Information†
Qualification Level
Industrial
(per JEDEC JESD47F) ††
Moisture Sensitivity Level TO-220 N/A
RoHS Compliant Yes
D2Pak MSL1
TO-262 N/A
Revision History
Date Comments
11/7/2014
Updated EAS (L =1mH) = 1025mJ on page 2
Updated note 10 “Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 45A, VGS =10V”. on page 2
Updated package outline on page 9,10,11.
