TIC206 SERIES SILICON TRIACS Sensitive Gate Triacs 4 A RMS Glass Passivated Wafer MT1 1 400 V to 700 V Off-State Voltage MT2 2 Max IGT of 5 mA (Quadrants 1 - 3) G 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDC2ACA absolute maximum ratings over operating case temperature (unless otherwise noted) RATING SYMBOL VALUE TIC206D Repetitive peak off-state voltage (see Note 1) TIC206M 600 VDRM V 700 TIC206S Full-cycle RMS on-state current at (or below) 85C case temperature (see Note 2) UNIT 400 IT(RMS) 4 A Peak on-state surge current full-sine-wave at (or below) 25C case temperature (see Note 3) ITSM 25 A Peak gate current IGM 0.2 A Peak gate power dissipation at (or below) 85C case temperature (pulse width 200 s) PGM 1.3 W Average gate power dissipation at (or below) 85C case temperature (see Note 4) PG(AV) 0.3 W Operating case temperature range TC -40 to +110 C Storage temperature range Tstg -40 to +125 C TL 230 C Lead temperature 1.6 mm from case for 10 seconds NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85C derate linearly to 110C case temperature at the rate of 160 mA/C. 3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost. 4. This value applies for a maximum averaging time of 20 ms. electrical characteristics at 25C case temperature (unless otherwise noted ) PARAMETER IDRM IGT TEST CONDITIONS Repetitive peak off-state current MIN VD = rated VDRM IG = 0 TC = 110C TYP MAX UNIT 1 mA Vsupply = +12 V RL = 10 tp(g) > 20 s 0.9 5 Gate trigger Vsupply = +12 V RL = 10 tp(g) > 20 s -2.2 -5 current Vsupply = -12 V RL = 10 tp(g) > 20 s -1.8 -5 Vsupply = -12 V RL = 10 tp(g) > 20 s 2.4 10 mA All voltages are with respect to Main Terminal 1. DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIC206 SERIES SILICON TRIACS electrical characteristics at 25C case temperature (unless otherwise noted) (continued) PARAMETER VGT VT TYP MAX Vsupply = +12 V RL = 10 tp(g) > 20 s 0.7 2 Gate trigger Vsupply = +12 V RL = 10 tp(g) > 20 s -0.7 -2 voltage Vsupply = -12 V RL = 10 tp(g) > 20 s -0.7 -2 On-state voltage IH Holding current IL Latching current dv/dt dv/dt(c) Critical rate of rise of off-state voltage Critical rise of commutation voltage TEST CONDITIONS MIN V Vsupply = -12 V RL = 10 tp(g) > 20 s 0.7 2 IT = 4.2 A IG = 50 mA (see Note 5) 1.4 2.2 Vsupply = +12 V IG = 0 Init' ITM = 100 mA 1.5 15 Vsupply = -12 V IG = 0 Init' ITM = -100 mA -1.3 -15 Vsupply = +12 V Vsupply = -12 V 30 (see Note 6) -30 VDRM = Rated VDRM IG = 0 TC = 110C VDRM = Rated VDRM ITRM = 4.2 A TC = 85C 1 UNIT V mA mA 20 V/s 3 V/s All voltages are with respect to Main Terminal 1. NOTES: 5. This parameter must be measured using pulse techniques, t p = 1 ms, duty cycle 2 %. Voltage-sensing contacts separate from the current carrying contacts are located within 3.2 mm from the device body. 6. The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator with the following characteristics: R G = 100 , tp(g) = 20 s, tr = 15 ns, f = 1 kHz. thermal characteristics PARAMETER RJC Junction to case thermal resistance RJA Junction to free air thermal resistance MIN 2 TYP MAX UNIT 7.8 C/W 62.5 C/W DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIC206 SERIES SILICON TRIACS TYPICAL CHARACTERISTICS GATE TRIGGER CURRENT vs GATE TRIGGER VOLTAGE vs TEMPERATURE + + tw(g) = 20 s VGT - Gate Trigger Voltage - V IGT - Gate Trigger Current - mA + + 10 1 -40 -20 0 20 40 60 80 100 VAA = 12 V + + - RL = 10 tw(g) = 20 s + + 1 0*1 -60 120 Vsupply IGTM -40 -20 TC - Case Temperature - C 0 20 40 CASE TEMPERATURE CASE TEMPERATURE TC05AD 100 IL - Latching Current - mA IH - Holding Current - mA IG = 0 Initiating ITM = 100 mA 1 Vsupply + - 20 40 60 80 100 TC - Case Temperature - C DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 120 + + - TC05AE + + 10 1 0 -60 -40 -20 0 20 40 60 80 100 120 TC - Case Temperature - C Figure 3. 120 VAA = 12 V Vsupply IGTM VAA = 12 V 0 100 LATCHING CURRENT vs 10 -20 80 Figure 2. HOLDING CURRENT vs -40 60 TC - Case Temperature - C Figure 1. 0*1 -60 TC05AB 10 VAA = 12 V RL = 10 Vsupply IGTM 0*1 -60 TEMPERATURE TC05AA 100 Figure 4. 3