TSAL5100 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES DESCRIPTION * * * * * * * * * * * * * Package type: leaded Package form: T-13/4 Dimensions (in mm): 5 Leads with stand-off Peak wavelength: p = 940 nm High reliability High radiant power High radiant intensity Angle of half intensity: = 10 Low forward voltage Suitable for high pulse current operation Good spectral matching with Si photodetectors Compliant to RoHS directive 2002/95/EC and accordance to WEEE 2002/96/EC * Halogen-free according to IEC 61249-2-21 definition TSAL5100 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power, molded in a blue-gray plastic package. APPLICATIONS 96 11505 * * * * * in Infrared remote control units with high power reqirements Free air transmission systems Infrared source for optical counters and card readers IR source for smoke detectors Smoke-automatic fire detectors PRODUCT SUMMARY COMPONENT Ie (mW/sr) (deg) P (nm) tr (ns) 130 10 940 800 TSAL5100 Note Test conditions see table "Basic Characteristics" ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-13/4 TSAL5100 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature tp/T = 0.5, tp = 100 s tp = 100 s t 5 s, 2 mm from case J-STD-051, leads 7 mm soldered on PCB Thermal resistance junction/ambient SYMBOL VALUE UNIT VR IF IFM IFSM PV Tj Tamb Tstg Tsd 5 100 200 1.5 160 100 - 40 to + 85 - 40 to + 100 260 V mA mA A mW C C C C RthJA 230 K/W Note Tamb = 25 C, unless otherwise specified Document Number: 81007 Rev. 1.6, 29-Jun-09 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 1 TSAL5100 High Power Infrared Emitting Diode, Vishay Semiconductors 940 nm, GaAlAs/GaAs 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 100 RthJA = 230 K/W 80 60 40 100 80 RthJA = 230 K/W 60 40 20 20 0 0 0 10 21211 20 30 40 50 60 70 80 90 100 0 21212 Tamb - Ambient Temperature (C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s Temperature coefficient of VF Reverse current Forward voltage Junction capacitance Radiant intensity Radiant power Temperature coefficient of e MIN. TYP. MAX. UNIT VF 1.35 1.6 V VF 2.6 3 V IF = 1 mA TKVF - 1.8 VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj IF = 100 mA, tp = 20 ms Ie 80 130 650 mV/K 10 A 400 mW/sr 25 pF IF = 1 A, tp = 100 s Ie 1000 mW/sr IF = 100 mA, tp = 20 ms e 35 mW IF = 20 mA TKe - 0.6 %/K 10 deg nm Angle of half intensity Peak wavelength IF = 100 mA p 940 Spectral bandwidth IF = 100 mA 50 nm Temperature coefficient of p IF = 100 mA TKp 0.2 nm/K Rise time IF = 100 mA tr 800 ns Fall time IF = 100 mA tf 800 ns method: 63 % encircled energy d 3.7 mm Virtual source diameter Note Tamb = 25 C, unless otherwise specified Document Number: 81007 Rev. 1.6, 29-Jun-09 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 2 TSAL5100 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs BASIC CHARACTERISTICS Tamb = 25 C, unless otherwise specified 1000 e - Radiant Power (mW) I F - Forward Current (A) 10 1 I FSM = 1 A (Single Pulse) t p/T = 0.01 0.05 10 0 0.1 0.5 1.0 10 -1 10 -2 96 11987 10 -1 10 0 10 1 t p - Pulse Duration (ms) 10 1 0.1 10 0 10 2 13602 Fig. 3 - Pulse Forward Current vs. Pulse Duration 104 1.6 103 1.2 102 tP = 100 s tP/T = 0.001 0 1 2 3 4 VF - Forward Voltage (V) 13600 0.8 50 100 140 T amb - Ambient Temperature (C) 94 7993 Fig. 4 - Forward Current vs. Forward Voltage Fig. 7 - Rel. Radiant Intensity/Power vs. Ambient Temperature 1000 1.25 e rel - Relative Radiant Power I e - Radiant Intensity (mW/sr) IF = 20 mA 0 - 10 0 10 100 100 10 1 1.0 0.75 0.5 0.25 IF = 100 mA 0 0.1 10 0 10 1 10 2 10 3 I F - Forward Current (mA) 890 10 4 Fig. 5 - Radiant Intensity vs. Forward Current www.vishay.com 3 10 4 0.4 101 14438 10 1 10 2 10 3 I F - Forward Current (mA) Fig. 6 - Radiant Power vs. Forward Current Ie rel; e rel IF - Forward Current (mA) 100 14291 990 940 - Wavelength (nm) Fig. 8 - Relative Radiant Power vs. Wavelength For technical questions, contact: emittertechsupport@vishay.com Document Number: 81007 Rev. 1.6, 29-Jun-09 TSAL5100 High Power Infrared Emitting Diode, Vishay Semiconductors 940 nm, GaAlAs/GaAs 0 10 20 40 1.0 0.9 50 0.8 60 70 0.7 - Angular Displacement Ie rel - Relative Radiant Intensity 30 80 0.6 0.4 0.2 0 15989 Fig. 9 - Relative Radiant Intensity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters C R 2.49 (sphere) < 0.7 (4.4) 7.7 0.15 8.7 0.3 35.2 0.55 12.2 0.3 O 5.8 0.15 A Area not plane 1.1 0.25 1 min. O 5 0.15 technical drawings according to DIN specifications 0.5 0.5 + 0.15 - 0.05 + 0.15 - 0.05 2.54 nom. 6.544-5258.08-4 Issue: 4; 19.05.09 14435 Document Number: 81007 Rev. 1.6, 29-Jun-09 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 4 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. 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