ATP301-TL-H/BKN - ON Semiconductor

62712 TKIM/42209QA MS IM TC-00001941 No. A1457-1/7

http://onsemi.com

Semiconductor Components Industries, LLC, 2013

July, 2013

ATP301

P-Channel Power MOSFET

–100V, –28A, 75mΩ, ATPAK

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1 : Gate

2 : Drain

3 : Source

4 : Drain

ATPAK

0.7

0.4

0.55

9.5

7.3 0.5

1.7

4.6

6.05

6.5

0.6

0.8

0.5

1.5

0.4 2.6

4.6

0.4

0.1

2.3 2.3

Features

• ON-resistance RDS(on)=57mΩ (typ.) • Input capacitance Ciss=4000pF (typ.)

• 10V drive • Halogen free compliance

Speciﬁ cations

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit

Drain-to-Source Voltage VDSS --100 V

Gate-to-Source Voltage VGSS ±20 V

Drain Current (DC) ID--28 A

Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% --112 A

Allowable Power Dissipation PDTc=25°C70W

Channel Temperature Tch 150 °C

Storage Temperature Tstg --55 to +150 °C

Avalanche Energy (Single Pulse) *1 EAS 54 mJ

Avalanche Current *2 IAV --28 A

Note :

*1 VDD=--30V, L=100μH, IAV=--28A

*2 L≤100μH, Single pulse

Package Dimensions

unit : mm (typ)

7057-001

Ordering number : ENA1457A

ATP301-TL-H

Product & Package Information

• Package : ATPAK

• JEITA, JEDEC : -

• Minimum Packing Quantity : 3,000 pcs./reel

Packing Type: TL Marking

Electrical Connection

ATP301

LOT No.

2,4

ATP301

No. A1457-2/7

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions Ratings Unit

min typ max

Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V --100 V

Zero-Gate Voltage Drain Current IDSS V

DS=--100V, VGS=0V --1 μA

Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 μA

Cutoff Voltage VGS(off) VDS=--10V, ID=-- 1mA --2.0 --3.5 V

Forward T ransfer Admittance | yfs |VDS=--10V, ID=--14A32 S

Static Drain-to-Source On-State Resistance

RDS(on) ID=--14A, VGS=--10V 57 75 mΩ

Input Capacitance Ciss VDS=--20V, f=1MHz 4000 pF

Output Capacitance Coss 270 pF

Reverse Transfer Capacitance Crss 150 pF

Turn-ON Delay Time td(on)

See speciﬁ ed Test Circuit.

32 ns

Rise Time tr 130 ns

Turn-OFF Delay Time td(off) 330 ns

Fall Time tf190 ns

Total Gate Charge Qg VDS=--60V, VGS=--10V, ID=--28A 73 nC

Gate-to-Source Charge Qgs 16 nC

Gate-to-Drain “Miller” Charge Qgd 14 nC

Diode Forward Voltage VSD IS=--28A, VGS=0V --1.0 --1.5 V

Switching Time Test Circuit Avalanche Resistance Test Circuit

Ordering Information

Device Package Shipping memo

ATP301-TL-H ATPAK 3,000pcs./reel Pb Free and Halogen Free

PW=10μs

D.C.≤1%

P.G 50Ω

ID= --14A

RL=4.3Ω

VDD= --60V

VOUT

VIN

--10V

VIN

ATP301

50Ω

--10V

≥50Ω

VDD

ATP301

No. A1457-3/7

| yfs | -- ID

RDS(on) -- VGS RDS(on) -- Tc

ID -- VDS ID -- VGS(off)

IS -- VSD

SW Time -- ID

Drain-to-Source Voltage, VDS -- V

Drain Current, ID -- A

Cutoff Voltage, VGS(off) -- V

Drain Current, ID -- A

Gate-to-Source Voltage, VGS -- V Case Temperature, Tc -- °C

Static Drain-to-Source

On-State Resistance, RDS(on) -- mΩ

Static Drain-to-Source

On-State Resistance, RDS(on) -- mΩ

Drain Current, ID -- A

Switching Time, SW Time -- ns

Drain-to-Source Voltage, VDS -- V

Ciss, Coss, Crss -- pF

Diode Forward Voltage, VSD -- V

Source Current, IS -- A

Forward T ransfer Admittance, | yfs | -- S

Ciss, Coss, Crss -- VDS

IT14595

IT14592

--50 --25 150

0 --30--10 --15 --20 --25--5

1000

IT14599

IT14597

IT14596

--0.1 --1.0

23 57

100

--1.2--1.0--0.6--0.4 --0.8--0.20

--0.001

--0.01

--0.1

--1.0

--10

--100

1.0

10000

2--10

357 523

--0.1 --1.0

23 57 2 --10

357 523

0 25 50 75 100 125

100

75°C

25°C

Tc= --25°C

--25°C

Tc=75

Tc= --25°C

75°C

VDS= --10V

Tc=75°C

25°C

--25°C

Ciss

Crss

IT14598

100

1000

td(off)

VDD= --60V

VGS= --10V f=1MHz

--0.5 --1.0 --3.0--2.0--1.5 --3.5 --4.0 --5.0--4.5--2.50

--10

--60

--50

--40

--30

--20

--10

--60

--50

--40

--30

--20

IT14594

--2 --4 --6 --8 --10--3 --5 --7 --9 0

160

120

100

140

200

120

100

140

160

180

IT14593

--2--1 --4--3 --6--50

Tc=25°C

VGS= --4.0V

VDS= --10V

VGS= --10V, ID= --14A

--8.0V

Coss

td(on)

--4.5V

--6.0V

--10.0V

Single pulse

ID= --14A

--25°C

25°C

Tc=75°C

Single pulse

VGS=0V

Single pulse

ATP301

No. A1457-4/7

VGS -- Qg

Total Gate Charge, Qg -- nC

Gate-to-Source Voltage, VGS -- V

EAS -- Ta

Avalanche Energy derating factor -- %

Ambient Temperature, Ta -- °C

025 50 75 100 125 150

100

120

175

IT14603

A S O

Drain-to-Source Voltage, VDS -- V

Drain Current, ID -- A

PD -- Tc

Allowable Power Dissipation, PD -- W

Case Temperature, Tc -- °C

IT14601

IT14600

01020 5040 706030 80

--2

--4

--6

--1

--3

--5

--8

--7

--9

--10 VDS= --60V

ID= --28A

IT14602

--0.01

--0.1

--1.0

--10

--0.1

IDP= --112A

ID= --28A

100

1ms

10ms

100ms

DC operation

Operation in

this area is

limited by RDS(on).

--1.0

23 57 --10

23 57 2 2357

--100

020 40 60 80 100 140120

160

Tc=25°C

Single pulse

PW≤10μs

ATP301

No. A1457-5/7

Taping Speciﬁ cation

ATP301-TL-H

ATP301

No. A1457-6/7

Outline Drawing Land Pattern Example

ATP301-TL-H

Mass (g) Unit

0.266

* For reference

mm Unit: mm

6.5

6.71.6 2

2.3 2.3

1.5

ATP301

PS No. A1457-7/7

Note on usage : Since the ATP301 is a MOSFET product, please avoid using this device in the vicinity of

highly charged objects.

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