IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXTA96P085T IXTP96P085T
IXTH96P085T
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = -10V, ID = 0.5 • ID25, Note 1 40 66 S
Ciss 13.1 nF
Coss VGS = 0V, VDS = - 25V, f = 1MHz 1175 pF
Crss 460 pF
td(on) 23 ns
tr 34 ns
td(off) 45 ns
tf 22 ns
Qg(on) 180 nC
Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 52 nC
Qgd 62 nC
RthJC 0.42 °C/W
RthCS TO-220 0.50 °C/W
TO-247 0.21 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V - 96 A
ISM Repetitive, Pulse Width Limited by TJM - 394 A
VSD IF = - 48A, VGS = 0V, Note 1 -1.3 V
trr 55 ns
QRM 100 nC
IRM - 3.6 A
Resistive Switching Times
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
IF = - 48A, -di/dt = -100A/μs
VR = - 43V, VGS = 0V
TO-247 Outline
Pins: 1 - Gate 2 - Drain
3 - Source
TO-220 Outline
Pins: 1 - Gate
2 - Drain
3 - Source
TO-263 Outline
1. Gate
2. Drain
3. Source
4. Drain
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.40 0.74 .016 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 8.00 8.89 .280 .320
E 9.65 10.41 .380 .405
E1 6.22 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.13 0 .005